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M74VHC1G135DFT2G

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2010
April, 2010 − Rev. 16
1 Publication Order Number:
MC74VHC1G135/D
MC74VHC1G135
2-Input NAND
Schmitt-Trigger with
Open Drain Output
The MC74VHC1G135 is a single gate CMOS Schmitt NAND
trigger with an open drain output fabricated with silicon gate CMOS
technology. It achieves high speed operation similar to equivalent
Bipolar Schottky TTL while maintaining CMOS low power
dissipation.
The internal circuit is composed of three stages, including an open
drain output which provides the capability to set the output switching
level. This allows the MC74VHC1G135 to be used to interface 5 V
circuits to circuits of any voltage between V
CC
and 7 V using an
external resistor and power supply.
The MC74VHC1G135 input structure provides protection when
voltages up to 7 V are applied, regardless of the supply voltage.
The MC74VHC1G135 can be used to enhance noise immunity or to
square up slowly changing waveforms.
Features
• High Speed: t
PD
= 4.9 ns (Typ) at V
CC
= 5 V
• Low Internal Power Dissipation: I
CC
= 1 mA (Max) at T
A
= 25°C
• Power Down Protection Provided on Inputs
• Pin and Function Compatible with Other Standard Logic Families
• Chip Complexity: FETs = 70; Equivalent Gates = 18
• Pb−Free Packages are Available
Figure 1. Pinout (Top View)
51
2
43
V
CC
IN B
IN A
OUT Y
GND
IN A
IN B
OUT Y
&
OVT
Figure 2. Logic Symbol
http://onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
ORDERING INFORMATION
L
L
H
H
L
H
L
H
FUNCTION TABLE
Inputs Output
AB
Z
Z
Z
L
Y
PIN ASSIGNMENT
1
2
3 GND
IN B
IN A
4
5V
CC
OUT Y
SC−88A/SOT−353/SC−70
DF SUFFIX
CASE 419A
TSOP−5/SOT−23/SC−59
DT SUFFIX
CASE 483
MARKING
DIAGRAMS
1
5
1
5
1
5
VZ M G
G
VZ = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or position may vary
depending upon manufacturing location.
1
5
VZ M G
G
M
MC74VHC1G135
http://onsemi.com
2
MAXIMUM RATINGS
Symbol Characteristics Value Unit
V
CC
DC Supply Voltage −0.5 to +7.0 V
V
IN
DC Input Voltage −0.5 to +7.0 V
V
OUT
DC Output Voltage −0.5 to 7.0 V
I
IK
Input Diode Current −20 mA
I
OK
Output Diode Current V
OUT
< GND; V
OUT
> V
CC
+20 mA
I
OUT
DC Output Current, per Pin +25 mA
I
CC
DC Supply Current, V
CC
and GND +50 mA
P
D
Power dissipation in still air SC−88A, TSOP−5 200 mW
q
JA
Thermal resistance SC−88A, TSOP−5 333 °C/W
T
L
Lead temperature, 1 mm from case for 10 secs 260 °C
T
J
Junction temperature under bias +150 °C
T
stg
Storage temperature −65 to +150 °C
MSL Moisture Sensitivity Level 1
F
R
Flammability Rating Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in
V
ESD
ESD Withstand Voltage Human Body Model (Note 1)
Machine Model (Note 2)
Charged Device Model (Note 3)
> 2000
> 200
N/A
V
I
Latchup
Latchup Performance Above V
CC
and Below GND at 125°C (Note 4) ±500 mA
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Tested to EIA/JESD22−A114−A
2. Tested to EIA/JESD22−A115−A
3. Tested to JESD22−C101−A
4. Tested to EIA/JESD78
RECOMMENDED OPERATING CONDITIONS
Symbol Characteristics Min Max Unit
V
CC
DC Supply Voltage 2.0 5.5 V
V
IN
DC Input Voltage 0.0 5.5 V
V
OUT
DC Output Voltage 0.0 7.0 V
T
A
Operating Temperature Range −55 +125 °C
t
r
, t
f
Input Rise and Fall Time V
CC
= 3.3 V ± 0.3 V
V
CC
= 5.0 V ± 0.5 V
0
0
No limit
No limit
ns/V
Device Junction Temperature versus
Time to 0.1% Bond Failures
Junction
Temperature °C
Time, Hours Time, Years
80 1,032,200 117.8
90 419,300 47.9
100 178,700 20.4
110 79,600 9.4
120 37,000 4.2
130 17,800 2.0
140 8,900 1.0
1
1 10 100
1000
TIME, YEARS
NORMALIZED FAILURE RATE
T
J
= 80
C°
T
J
= 90
C°
T
J
= 100 C°
T
J
= 110 C°
T
J
= 130 C°
T
J
= 120 C°
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
Figure 3. Failure Rate vs. Time Junction Temperature
MC74VHC1G135
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3
DC ELECTRICAL CHARACTERISTICS
Symbol Parameter Test Conditions
V
CC
(V)
T
A
= 25°C T
A
≤ 85°C −55 ≤ T
A
≤ 125°C
Unit
Min Typ Max Min Max Min Max
V
T+
Positive Threshold
Voltage
3.0
4.5
5.5
1.50
2.35
2.80
1.88
2.66
3.21
2.25
3.10
3.70
1.50
2.35
2.80
2.25
3.10
3.70
1.50
2.35
2.80
2.25
3.10
3.70
V
V
T−
Negative Threshold
Voltage
3.0
4.5
5.5
0.65
1.10
1.45
1.03
1.62
2.02
1.40
2.10
2.60
0.65
1.10
1.45
1.40
2.10
2.60
0.65
1.10
1.45
1.40
2.10
2.60
V
V
H
Hysteresis Voltage 3.0
4.5
5.5
0.30
0.40
0.50
0.85
1.05
1.20
1.60
2.00
2.25
0.30
0.40
0.50
1.60
2.00
2.25
0.30
0.40
0.50
1.60
2.00
2.25
V
V
OL
Maximum Low−Level
Output Voltage
V
IN
= V
IH
or V
IL
I
OL
= 50 mA
2.0
3.0
4.5
0.0
0.0
0.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
I
OL
= 4 mA
I
OL
= 8 mA
3.0
4.5
0.36
0.36
0.44
0.44
0.52
0.52
V
I
IN
Maximum Input
Leakage Current
V
IN
= 5.5 V or GND 0 to
5.5
±0.1 ±1.0 ±1.0
mA
I
CC
Maximum Quiescent
Supply Current
V
IN
= V
CC
or GND 5.5 1.0 20 40
mA
I
OFF
Power Off−Output
Leakage Current
V
OUT
= 5.5 V
V
IN
= 5.5 V
0 0.25 2.5 5
mA
AC ELECTRICAL CHARACTERISTICS C
load
= 50 pF, Input t
r
/t
f
= 3.0 ns
Symbol Parameter Test Conditions
T
A
= 25°C T
A
≤ 85°C −55 ≤ T
A
≤ 125°C
Unit
Min Typ Max Min Max Min Max
t
PZL
Maximum Output
Enable Time, A or B to Y
V
CC
= 3.3 ± 0.3 V C
L
= 15 pF
R
L
= R
I
= 500 W C
L
= 50 pF
7.6
10.1
11.9
15.4
1.0
1.0
14.0
17.5
1.0
1.0
16.1
19.6
ns
V
CC
= 5.0 ± 0.5 V C
L
= 15 pF
R
L
= R
I
= 500 W C
L
= 50 pF
4.9
6.4
7.7
9.7
1.0
1.0
9.0
11.0
1.0
1.0
10.3
12.3
t
PLZ
Maximum Output
Disable Time
V
CC
= 3.3 ± 0.3 V C
L
= 50 pF
R
L
= R
I
= 500 W
10.1 15.4 17.5 19.6 ns
V
CC
= 5.0 ± 0.5 V C
L
= 50 pF
R
L
= R
I
= 500 W
6.4 9.7 11.0 12.3
C
IN
Maximum Input
Capacitance
5.0 10 10 10 pF
C
PD
Power Dissipation Capacitance (Note 5)
Typical @ 25°C, V
CC
= 5.0 V
pF
16
5. C
PD
is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: I
CC(OPR
)
= C
PD
V
CC
f
in
+ I
CC
. C
PD
is used to determine the no−load dynamic
power consumption; P
D
= C
PD
V
CC
2
f
in
+ I
CC
V
CC
.
P1-P3P4-P6

M74VHC1G135DFT2G

Mfr. #:
Buy M74VHC1G135DFT2G
Manufacturer:
ON Semiconductor
Description:
Logic Gates 2-5.5V Single 2-Input NAND Schmitt
Lifecycle:
New from this manufacturer.
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