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VS-112CNQ030ASMPBF

P1-P3P4-P6P7-P9
VS-112CNQ030APbF Series
www.vishay.com
Vishay Semiconductors
Revision: 21-May-14
1
Document Number: 94124
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Performance Schottky Rectifier New Generation 3,
D-61 Package, 2 x 55 A
FEATURES
• 150 °C T
J
operation
• Center tap module
• Very low forward voltage drop
• High frequency operation
• High power discrete
• High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• New fully transfer-mold low profile, small footprint, high
current package
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Note
*
This datasheet provides information about parts that are
RoHS-compliant and/or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information/tables in this datasheet for details.
DESCRIPTION
The center tap Schottky rectifier module has been optimized
for very low forward voltage drop, with moderate
leakage. The proprietary barrier technology allows for
reliable operation up to 150 °C junction temperature. Typical
applications are in switching power supplies, converters,
freewheeling diodes, and reverse battery protection.
PRODUCT SUMMARY
Package D-61-8, D-61-8-SM, D-61-8-SL
I
F(AV)
2 x 55 A
V
R
30 V
V
F
at I
F
0.49 V
I
RM
max. 400 mA at 125 °C
T
J
max. 150 °C
Diode variation Common cathode
E
AS
36 mJ
Base
common
cathode
Base
common
cathode
Common
cathode
Anode
2
Anode
1
123
Common
cathode
Anode
2
Anode
1
123
Anode
2
Anode
1
13
D-61-8
VS-112CNQ030APbF
VS-112CNQ030ASMPbF
D-61-8-SM
VS-112CNQ030ASLPbF
D-61-8-SL
Available
Available
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Rectangular waveform 110 A
V
RRM
30 V
I
FSM
t
p
= 5 μs sine 5100 A
V
F
55 A
pk
, T
J
= 125 °C (per leg) 0.39 V
T
J
Range -55 to +150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-112CNQ030APbF UNITS
Maximum DC reverse voltage V
R
30 V
Maximum working peak reverse voltage V
RWM
VS-112CNQ030APbF Series
www.vishay.com
Vishay Semiconductors
Revision: 21-May-14
2
Document Number: 94124
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average
forward current
See fig. 5
per leg
I
F(AV)
50 % duty cycle at T
C
= 131 °C, rectangular waveform
55
A
per device 110
Maximum peak one cycle
non-repetitive surge current per leg
See fig. 7
I
FSM
5 μs sine or 3 μs rect. pulse
Following any rated
load condition and
with rated V
RRM
5100
A
10 ms sine or 6 ms rect. pulse 880
Non-repetitive avalanche energy per leg E
AS
T
J
= 25 °C, I
AS
= 8 A, L = 1.12 mH 36 mJ
Repetitive avalanche current per leg I
AR
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
8A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop per leg
See fig. 1
V
FM
(1)
55 A
T
J
= 25 °C
0.49
V
110 A 0.57
55 A
T
J
= 125 °C
0.39
110 A 0.51
Maximum reverse leakage current per leg
See fig. 2
I
RM
(1)
T
J
= 25 °C
V
R
= Rated V
R
3.5
mA
T
J
= 125 °C 400
Maximum junction capacitance per leg C
T
V
R
= 5 V
DC
, (test signal range 100 kHz to 1 MHz), 25 °C 5100 pF
Typical series inductance per leg L
S
Measured lead to lead 5 mm from package body 5.5 nH
Maximum voltage rate of change dV/dt Rated V
R
10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
-55 to +150 °C
Maximum thermal resistance,
junction to case per leg
R
thJC
DC operation
See fig. 4
0.5
°C/W
Maximum thermal resistance,
junction to case per package
DC operation 0.25
Typical thermal resistance,
case to heatsink (D-61-8 only)
R
thCS
Mounting surface, smooth and greased
Device flatness < 5 mils
0.30
Approximate weight
7.8 g
0.28 oz.
Mounting torque
(D-61-8 only)
minimum 40 (35)
kgf · cm
(lbf · in)
maximum 58 (50)
Marking device
Case style D-61-8 112CNQ030A
Case style D-61-8-SM 112CNQ030ASM
Case style D-61-8-SL 112CNQ030ASL
VS-112CNQ030APbF Series
www.vishay.com
Vishay Semiconductors
Revision: 21-May-14
3
Document Number: 94124
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics (Per Leg)
100
10
1
V
FM
- Forward Voltage Drop (V)
I
F
- Instantaneous Forward Current (A)
0 0.8 1.2 1.40.4
1000
T
J
= 25 °C
T
J
= 150 °C
T
J
= 125 °C
0.2 0.6 1.0
V
R
- Reverse Voltage (V)
I
R
- Reverse Current (mA)
0.01
0.1
1
05
15 25
30
10
1000
10 20
100
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 75 °C
T
J
= 50 °C
T
J
= 25 °C
10 000
V
R
- Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
0
1000
20
3010515
25
T
J
= 25 °C
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01
0.1
110
Single pulse
(thermal resistance)
.
.
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
P1-P3P4-P6P7-P9

VS-112CNQ030ASMPBF

Mfr. #:
Buy VS-112CNQ030ASMPBF
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers Schottky - D-61TM-e3
Lifecycle:
New from this manufacturer.
Delivery:
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