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NTMFS4899NFT1G

P1-P3P4-P6P7-P7
© Semiconductor Components Industries, LLC, 2012
September, 2012 − Rev. 3
1 Publication Order Number:
NTMFS4899NF/D
NTMFS4899NF
Power MOSFET
30 V, 75 A, Single N−Channel, SO−8 FL
Features
• Integrated Schottky Diode
• Low R
DS(on)
to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• CPU Power Delivery
• DC−DC Converters
• Low Side Switching
MAXIMUM RATINGS (T
J
= 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage V
DSS
30 V
Gate−to−Source Voltage V
GS
±20 V
Continuous Drain
Current R
q
JA
(Note 1)
Steady
State
T
A
= 25°C
I
D
17.8
A
T
A
= 85°C 12.9
Power Dissipation
R
q
JA
(Note 1)
T
A
= 25°C P
D
2.70 W
Continuous Drain
Current R
q
JA
v
10 sec
T
A
= 25°C
I
D
29.1
A
T
A
= 85°C 21
Power Dissipation
R
q
JA,
t v 10 sec
T
A
= 25°C P
D
7.18 W
Continuous Drain
Current R
q
JA
(Note 2)
T
A
= 25°C
I
D
10.4
A
T
A
= 85°C 7.5
Power Dissipation
R
q
JA
(Note 2)
T
A
= 25°C P
D
0.92 W
Continuous Drain
Current R
q
JC
(Note 1)
T
C
= 25°C
I
D
75
A
T
C
= 85°C 54
Power Dissipation
R
q
JC
(Note 1)
T
C
= 25°C P
D
48 W
Pulsed Drain
Current
t
p
=10ms
T
A
= 25°C I
DM
188 A
Current limited by package T
A
= 25°C I
Dmaxpkg
90 A
Operating Junction and Storage
Temperature
T
J
,
T
STG
−55 to
+150
°C
Source Current (Body Diode) I
S
46 A
Drain to Source dV/dt dV/dt 6 V/ns
Single Pulse Drain−to−Source Avalanche
Energy (V
DD
= 50 V, V
GS
= 10 V,
I
L
= 41 A
pk
, L = 0.1 mH, R
G
= 25 W)
EAS 84 mJ
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
L
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
MARKING
DIAGRAM
http://onsemi.com
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
4899NF
AYWZZ
V
(BR)DSS
R
DS(ON)
MAX I
D
MAX
30 V
5.0 mW @ 10 V
75 A
7.5 mW @ 4.5 V
N−CHANNEL MOSFET
Device Package Shipping
†
ORDERING INFORMATION
NTMFS4899NFT1G SO−8FL
(Pb−Free)
1500 /
Tape & Reel
NTMFS4899NFT3G SO−8FL
(Pb−Free)
5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
S
S
S
G
D
D
D
D
G
S
D
1
NTMFS4899NF
http://onsemi.com
2
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction−to−Case (Drain)
R
q
JC
2.6
°C/W
Junction−to−Ambient – Steady State (Note 1)
R
q
JA
46.3
Junction−to−Ambient – Steady State (Note 2)
R
q
JA
136.2
Junction−to−Ambient − t v 10 sec
R
q
JA
17.4
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size (50 mm
2
, 1 oz Cu).
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise specified)
Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 1.0 mA 30 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/
T
J
27
mV/°C
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V,
V
DS
= 24 V
T
J
= 25 °C 500
mA
Gate−to−Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= ±20 V ±100 nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 1.0 mA 1.5 2.5 V
Negative Threshold Temperature Coefficient V
GS(TH)
/T
J
10 mV/°C
Drain−to−Source On Resistance R
DS(on)
V
GS
= 10 V
I
D
= 30 A 3.9 5.0
mW
I
D
= 15 A 3.8
V
GS
= 4.5 V
I
D
= 30 A 6.0 7.5
I
D
= 15 A 5.8
Forward Transconductance g
FS
V
DS
= 1.5 V, I
D
= 15 A 57 S
CHARGES AND CAPACITANCES
Input Capacitance
C
ISS
V
GS
= 0 V, f = 1 MHz, V
DS
= 12 V
1600
pF
Output Capacitance C
OSS
360
Reverse Transfer Capacitance C
RSS
165
Total Gate Charge Q
G(TOT)
V
GS
= 4.5 V, V
DS
= 15 V; I
D
= 30 A
12.2
nC
Threshold Gate Charge Q
G(TH)
1.6
Gate−to−Source Charge Q
GS
4.6
Gate−to−Drain Charge Q
GD
4.6
Total Gate Charge Q
G(TOT)
V
GS
= 10 V, V
DS
= 15 V,
I
D
= 30 A
25
nC
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
t
d(ON)
V
GS
= 4.5 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0 W
12.6
ns
Rise Time t
r
20.3
Turn−Off Delay Time t
d(OFF)
20
Fall Time t
f
4.2
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
NTMFS4899NF
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise specified)
Parameter UnitMaxTypMinTest ConditionSymbol
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
t
d(ON)
V
GS
= 10 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0 W
8.8
ns
Rise Time t
r
18.5
Turn−Off Delay Time t
d(OFF)
25.9
Fall Time t
f
2.5
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= 2.0 A
T
J
= 25°C 0.45 0.70
V
T
J
= 125°C 0.43
Reverse Recovery Time t
RR
V
GS
= 0 V, dI
S
/dt = 100 A/ms,
I
S
= 30 A
19
ns
Charge Time t
a
9.2
Discharge Time t
b
9.8
Reverse Recovery Charge Q
RR
5.7 nC
PACKAGE PARASITIC VALUES
Source Inductance
L
S
T
A
= 25°C
0.38
nH
Drain Inductance L
D
0.005
Gate Inductance L
G
1.84
Gate Resistance R
G
1.5 2.4
W
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
P1-P3P4-P6P7-P7

NTMFS4899NFT1G

Mfr. #:
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Manufacturer:
ON Semiconductor
Description:
MOSFET NFET SO8FL 30V 75A 5MOHM
Lifecycle:
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