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ZXTN26020DMFTA

P1-P3P4-P6
ZXTN26020DMF
Documnt Number: DS31953 Rev. 2 - 1
1 of 6
www.diodes.com
September 2009
© Diodes Incorporated
A
Product Line o
f
Diodes Incorporated
ZXTN26020DMF
Features
• High Gain Low Vcesat NPN transistor
• Very Low Rcesat
• High ICM capability
• 1.5A Continuous Current Rating
• Ultra-Small Surface mount Package
• Qualified to AEC-Q101 Standards for High Reliability
• Lead, Halogen and Antimony Free, RoHS Compliant (Note 1)
• “Green” Device (Note 2)
• ESD rating: 400V-MM, 8KV-HBM
Mechanical Data
• Case: DFN1411-3
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish – NiPdAu over Copper lead frame. Solderable
per MIL-STD-202, Method 208
• Weight: 0.003 grams (approximate)
Applications
• MOSFET and IGBT gate driving
• DC-DC conversion
• Interface between low voltage IC and Load
• LED driving
Ordering Information
Product Status Marking Reel size (inches) Tape width (mm) Quantity per reel
ZXTN26020DMFTA Active Z1 7 8 3000
Notes: 1. No purposefully added lead. Halogen and Antimony Free.
2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com
Marking Information
Date Code Key
Year 2009 2010 2011 2012 2013 2014 2015
Code W X Y Z A B C
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
Z1 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: W = 2009)
M = Month (ex: 9 = September)
Top view
Pin-out Top view
Device Symbol Bottom view
Z1
HIGH GAIN, LOW V
CE(SAT)
NPN BIPOLAR TRANSISTOR
ZXTN26020DMF
Documnt Number: DS31953 Rev. 2 - 1
2 of 6
www.diodes.com
September 2009
© Diodes Incorporated
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Product Line o
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Diodes Incorporated
ZXTN26020DMF
Maximum Ratings
Characteristic Symbol Value Unit
Collector-Base Voltage
V
CBO
20 V
Collector-Emitter Voltage
V
CEO
20 V
Emitter-Base Voltage
V
EBO
7 V
Continuous Collector Current (Note 4)
I
C
1.5 A
Peak Pulse Current
I
CM
4 A
Base Current
I
B
0.5 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 3)
P
D
1 W
Power Dissipation (Note 4)
P
D
380 mW
Thermal Resistance, Junction to Ambient (Note 3) @ T
A
= 25°C
R
θ
JA
125
°C/W
Thermal Resistance, Junction to Ambient (Note 3) @ T
A
= 25°C
R
θ
JA
330
°C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150
°C
Notes: 3. Device mounted on FR-4 PCB with 1inch square pads.
4. Device mounted on FR-4 PCB with minimum recommended pad layout
0
0.2
0.4
0.6
0.8
1.0
1.2
0 20 40 60 80 100 120 140 160
T , AMBIENT TEMPERATURE ( C)
A
°
Fig. 1 Power Dissipation vs. Ambient Temperature
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N (W)
D
Note 3
Note 4
0.1
1
10
100
1,000
Single Pulse
0.00001 0.001 0.1 10 1,000
Fig. 2 Single Pulse Maximum Power Dissipation
t , PULSE DURATION TIME (s)
1
T - T = P * R (t)
Duty Cycle, D = t /t
JA JA
12
θ
R (t) = r(t) *
θ
JA
R
R = 328°C/W
θ
θ
JA
JA
P
(
p
k
)
,
P
EAK
T
R
A
N
SIE
N
T
P
O
WE
R
(W
)
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
Fig. 3 Transient Thermal Response
t , PULSE DURATION TIME (s)
1
0.001
0.01
0.1
1
r(t),
T
R
ANSIEN
T
T
H
E
R
MAL
R
ESIS
T
AN
C
E
T - T = P * R (t)
Duty Cycle, D = t /t
JA JA
12
θ
R (t) = r(t) *
θ
JA
R
R = 328°C/W
θ
θ
JA
JA
P(pk)
t
1
t
2
D = 0.7
D = 0.5
D = 0.3
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
D = 0.9
D = 0.1
ZXTN26020DMF
Documnt Number: DS31953 Rev. 2 - 1
3 of 6
www.diodes.com
September 2009
© Diodes Incorporated
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Product Line o
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Diodes Incorporated
ZXTN26020DMF
Electrical Characteristics (at T
A
= 25°C unless otherwise specified)
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage
V
(
BR
)
CBO
20
⎯ ⎯
V
I
C
= 100μA, I
E
= 0A
Collector-Emitter Breakdown Voltage (Note 5)
V
(
BR
)
CEO
20
⎯ ⎯
V
I
C
= 10mA, I
B
= 0A
Emitter-Base Breakdown Voltage
V
(
BR
)
EBO
7
⎯ ⎯
V
I
E
= 100μA, I
C
= 0A
Emitter-Collector Breakdown Voltage
V
(
BR
)
ECO
5
⎯ ⎯
V
I
E
= 100μA, I
B
= 0A
Collector Cutoff Current Icbo
⎯ ⎯
100
0.5
nA
μA
V
CB
= 20V, I
E
= 0A
V
CB
= 20V, I
E
= 0, T
A
= 125°C
Emitter Cutoff Current Ices
⎯ ⎯
100 nA
V
CE
= 20V, V
BE
= 0V
Base Cutoff Current Iebo
⎯ ⎯
100 nA
V
BE
= 5.6V, I
C
= 0A
DC Current Gain (Note 5)
h
FE
300
290
270
200
⎯
⎯
⎯
⎯
1000
⎯
⎯
⎯
⎯
V
CE
= 2V, I
C
= 100mA
V
CE
= 2V, I
C
= 0.5A
V
CE
= 2V, I
C
= 1A
V
CE
= 2V, I
C
= 2A
Collector-Emitter Saturation Voltage (Note 5)
V
CE(SAT)
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
45
70
125
225
225
290
mV
mV
mV
mV
mV
mV
I
C
= 100mA, I
B
= 1mA
I
C
= 500mA, I
B
= 25mA
I
C
= 1A, I
B
= 50mA
I
C
= 1.5A, I
B
= 30mA
I
C
= 2A, I
B
= 100mA
I
C
= 2A, I
B
= 40mA
Equivalent On-Resistance
R
CE
(
SAT
)
⎯
90
⎯
mΩ
I
C
= 1A, I
B
= 50mA
Base-Emitter Turn-On Voltage
V
BE
(
ON
)
⎯ ⎯
1.2 V
V
CE
= 2V, I
C
= 2A
Base-Emitter Saturation Voltage
V
BE
(
SAT
)
⎯ ⎯
1.1 V
I
C
= 2A, I
B
= 100mA
Output Capacitance (Note 5)
C
obo
⎯ ⎯
20 pF
V
CB
= 10V, f = 1.0MHz
Input Capacitance (Note 5)
C
ibo
—
⎯
150 pF
V
EB
= 0.5V, f = 1.0MHz
Current Gain-Bandwidth Product
f
T
⎯
260
⎯
MHz
V
CE
= 10V, I
C
= 50mA,
f = 100MHz
Turn-On Time
t
on
⎯
60
⎯
ns
V
CC
= 10V, I
C
= 1A
I
B2
= -I
B1
= 50mA
Delay Time
t
d
⎯
20
⎯
ns
Rise Time
t
⎯
40
⎯
ns
Turn-Off Time
t
off
⎯
225
⎯
ns
Storage Time
t
s
⎯
205
⎯
ns
Fall Time
t
f
⎯
20
⎯
ns
Notes: 5. Short duration pulse test used to minimize self-heating effect.
0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
01 2 3 45
V , COLLECTOR-EMITTER VOLTAGE (V)
CE
Fig. 4 Typical Collector Current
vs. Collector-Emitter Voltage
I,
C
O
LLE
C
T
O
R
C
U
R
R
E
N
T
(A)
C
I = 1mA
B
I = 2mA
B
I = 3mA
B
I = 4mA
B
I = 5mA
B
0
100
200
300
400
500
600
700
800
900
1,000
1,100
1,200
0.001 0.01 0.1 1 10
I , COLLECTOR CURRENT (A)
C
Fig. 5 Typical DC Current Gain vs. Collector Current
h, D
C
C
U
R
R
EN
T
G
AIN
FE
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
P1-P3P4-P6

ZXTN26020DMFTA

Mfr. #:
Buy ZXTN26020DMFTA
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT NPN 20V Bipolar 1.5A Ic 380mw
Lifecycle:
New from this manufacturer.
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