TSA1036
General Purpose PNP Transistor
Document Number:
DS_P0000261 1
Version: B15
PRODUCT SUMMARY
BV
-60V
BV
-60V
I
-0.6A
V
-0.4V @ I
/ I
= -150mA / -15mA
Features
● Low V
CE(SAT)
-0.4 @ I
C
/ I
B
= -150mA / -15mA
● Complementary part with TSC2411
Ordering Information
Part No. Package Packing
TSA1036CX RFG
SOT-23 3Kpcs / 7” Reel
Note: “G” denotes for Halogen Free
Structure
● Epitaxial Planar Type
● PNP Silicon Transistor
Absolute Maximum Rating
(Ta = 25°C unless otherwise noted)
Parameter Symbol Limit Unit
Collector-Emitter Voltage V
-60 V
Emitter-Base Voltage V
-5 V
Collector Current I
-0.6 A
Collector Power Dissipation P
225 mW
Thermal Resistance, Junction to Ambient
Rθ
556 °C/W
Operating Junction Temperature T
+150 °C
Operating Junction and Storage Temperature Range T
- 55 to +150 °C
Note: Single pulse, Pw≤350us, Duty≤2%
Electrical Specifications
(Ta = 25°C unless otherwise noted)
Parameter Conditions Symbol
Min Typ Max Unit
Collector-Base Breakdown Voltage I
= -10uA, I
= 0 BV
-60 -- -- V
Collector-Emitter Breakdown Voltage
I
= -10mA, I
= 0 BV
-60 -- -- V
Emitter-Base Breakdown Voltage I
= -10uA, I
= 0 BV
-5 -- -- V
Collector Cutoff Current V
= -50V, I
= 0 I
-- -- -10 nA
Emitter Cutoff Current V
= -0.5V, I
= 0 I
-- -- -50 nA
Collector-Emitter Saturation Voltage I
/ I
= -150mA / -15mA *V
-- -- -0.4 V
Base-Emitter Saturation Voltage I
/ I
= -500mA / -50mA *V
-- -- -1.3 V
DC Current Transfer Ratio
V
= -10V, I
= -0.1A *h
1 75 -- --
V
= -10V, I
= -150mA *h
2 100 -- 300
Transition Frequency
V
CE
=-5V, I
C
=-50mA,
f=100MHz
f
T
200 -- -- MHz
Output Capacitance V
= -10V, f=1MHz Cob -- -- 8 pF
* Pulse Test: Pulse Width ≤380uS, Duty Cycle≤2%
1. Base
2. Emitter
3. Collector
