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MIXA80W1200TED
P1-P3
P4-P6
P7-P7
© 2010 IXYS All rights reser
ved
4 - 7
20100827d
MIXA80W1200TED
IXYS reserves the right to change limits, test conditions and dimensions.
XXXXXXXXXX yywwa
Log
o
UL
Part name
Date Co
de
Data Matrix
Part number
M
= Module
I
= IGBT
X
= XPT
A
= standard
80
= Current Rating [A]
W
= Six-P
ack
1200
= Rev
erse V
oltage [V]
T
= NTC
ED
= E2-P
ack
Ordering
Part Name
Marking on Product
Delivering Mode
Base Qty
Ordering Code
Standard
MIXA80W1200
TED
MIXA80W1200TED
Box
6
508642
Circuit Dia
gram
Outline Drawing
Dimensions in mm (1 mm = 0.0394“)
X
0
baseplate typ. 100 µm con
vex
over 75 mm befor
e mounting
20.5
±
0.1
17
±
0.5
7
-0.5
Ø 2.1; l=6
0.2
±
0.2
±
±
0.1
±
0.2
±
0.3
Y
B
Ø 2.5
Ø 2.1
Detail Z
+
0.3
Ø 6
6
1.5
Z
Detail X
0.05
±
0.02
±
0.8
1.2
Detail
Y
0.05
±
±
1°
15°
0.8
45
38.4
32
11
Ø5.5
72.7
75.7
82.3
93
107.5
3.5
-0.5
42.69
38.88
54.12
50.31
61.74
65.55
76.98
73.17
19.83
16.02
31.26
27.45
0
20.95
11.43
7.62
7.62
11.43
20.95
76.98
61.74
2
1
6
5
3
4
8
7
9
10
12
11
86.1
73.17
57.93
38.88
42.69
23.64
19.83
24
21
22
23
19
20
17
18
n
0.4
j
A
B
A
15
14
13
27
28
16
25
26
23, 24
21, 22
19, 20
9
10
11
12
5
6
7
8
1
2
3
4
25, 26
27, 28
NTC
17
18
15, 16
13, 14
Product Marking
© 2010 IXYS All rights reser
ved
5 - 7
20100827d
MIXA80W1200TED
IXYS reserves the right to change limits, test conditions and dimensions.
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
20
40
60
80
100
120
140
0
20
40
60
80
100
120
140
160
0
2
4
6
8
10
12
14
16
0.0
0.5
1.0
1.5
2.
0
2.5
3.
0
3.5
4.0
4.5
0
20
40
60
80
100
120
140
V
CE
[V]
I
C
[A]
Q
G
[nC]
V
GE
[V]
9 V
11 V
5
6
7
8
9
10
11
12
13
0
20
40
60
80
100
120
140
0
50
100
150
200
250
300
0
5
10
15
20
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 125°C
13 V
8
10
12
14
16
18
20
22
24
5
6
7
8
9
10
E
[mJ]
E
off
Fig. 1 Typ. output characteristi
cs
V
CE
[V]
I
C
[A]
V
GE
= 15 V
17 V
19 V
Fig. 2 Typ. output characteristi
cs
I
C
[A]
Fig. 3 Typ. tranfer characteristi
cs
V
GE
[V]
Fig. 4 Typ. turn-on gate
charge
Fig. 5 Typ. sw
itching energy vs. col
lector current
E
on
Fig. 6 Typ. sw
itching energy vs
. gate resistance
R
G
[
Ω
]
E
[mJ]
I
C
[A]
E
on
E
off
I
C
= 75 A
V
CE
= 600 V
R
G
= 10
Ω
V
CE
= 600 V
V
GE
= ±15 V
T
VJ
= 125°C
I
C
= 75 A
V
CE
= 600 V
V
GE
= ±15 V
T
VJ
= 125°C
V
GE
= 15 V
T
VJ
= 125°C
T
ransistor
T1 -
T6
© 2010 IXYS All rights reser
ved
6 - 7
20100827d
MIXA80W1200TED
IXYS reserves the right to change limits, test conditions and dimensions.
1000
1200
1400
1600
1800
2000
2200
4
8
12
16
20
24
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
50
100
150
200
Q
rr
[µC]
I
F
[A]
V
F
[V]
di
F
/dt
[A/µs]
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 125°C
V
R
= 600 V
50 A
100 A
200 A
Fig. 7 Typ. Forw
ard current versus V
F
Fig. 8 Typ. reverse recov.ch
arge Q
rr
vs. di/dt
1000
1200
1400
1600
180
0
2000
2200
40
60
80
100
120
140
160
I
RR
[A]
di
F
/dt
[A/µs]
T
VJ
= 125°C
V
R
= 600 V
200 A
50 A
100 A
Fig. 9 Typ. peak reverse current I
RM
vs. di/dt
1000
1200
1400
1600
1800
2000
2200
0
100
200
300
400
500
600
700
t
rr
[ns]
di
F
/dt
[A/µs]
200 A
50 A
100 A
T
VJ
= 125°C
V
R
= 600 V
Fig. 10 Typ. recovery time
t
rr
versus di/dt
Fig. 11 Typ. recovery e
nergy E
rec
versus di/dt
1000
1200
1400
1600
180
0
2000
2200
0
2
4
6
8
E
rec
[mJ]
di
F
/dt
[A/µs]
T
VJ
= 125°C
V
R
= 600 V
200 A
50 A
100 A
0.001
0.01
0.1
1
10
0.01
0.1
1
t
p
[s]
Z
thJC
[K/W]
Fig. 12 Typ. transi
ent thermal impedance
IGBT
Diode
IGBT
FRD
R
i
t
i
R
i
t
i
1
0.072
0.002
0.092
0.002
2
0.037
0.03
0.067
0.03
3
0.156
0.03
0.155
0.03
4
0.055
0.08
0.086
0.08
In
ver
ter D1 - D6
P1-P3
P4-P6
P7-P7
MIXA80W1200TED
Mfr. #:
Buy MIXA80W1200TED
Manufacturer:
Littelfuse
Description:
IGBT Modules Six-Pack XPT IGBT
Lifecycle:
New from this manufacturer.
Delivery:
DHL
FedEx
Ups
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EMS
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