OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

2N6517TA

P1-P3P4-P5
V20120S, VI20120S
www.vishay.com
Vishay General Semiconductor
Revision: 12-Dec-16
1
Document Number: 89243
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low V
F
= 0.50 V at I
F
= 5 A
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder bath temperature 275 °C max. 10 s,
per JESD 22-B106
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
MECHANICAL DATA
Case: TO-220AB and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix
meets JESD class 2 whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
I
F(AV)
20 A
V
RRM
120 V
I
FSM
200 A
V
F
at I
F
= 20 A 0.73 V
T
J
max. 150 °C
Package TO-220AB, TO-262AA
Diode variation Single die
TO-220AB
1
2
3
1
K
2
3
TO-262AA
TMBS
®
V20120S VI20120S
PIN 1
PIN 2
PIN 3
K
PIN 1
PIN 2
CASE
PIN 3
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL V20120S VI20120S UNIT
Maximum repetitive peak reverse voltage V
RRM
120 V
Maximum average forward rectified current (fig. 1) I
F(AV)
20 A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
200 A
Voltage rate of change (rated V
R
) dV/dt 10 000 V/μs
Operating junction and storage temperature range T
J
, T
STG
-40 to +150 °C
V20120S, VI20120S
www.vishay.com
Vishay General Semiconductor
Revision: 12-Dec-16
2
Document Number: 89243
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width 40 ms
Note
(1)
AEC-Q101 qualified
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Instantaneous forward voltage
I
F
= 5 A
T
A
= 25 °C
V
F
(1)
0.57 -
V
I
F
= 10 A 0.71 -
I
F
= 20 A 0.99 1.12
I
F
= 5 A
T
A
= 125 °C
0.50 -
I
F
= 10 A 0.61 -
I
F
= 20 A 0.73 0.81
Reverse current
V
R
= 90 V
T
A
= 25 °C
I
R
(2)
10 - μA
T
A
= 125 °C 6 - mA
V
R
= 120 V
T
A
= 25 °C - 300 μA
T
A
= 125 °C 14 30 mA
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL V20120S VI20120S UNIT
Typical thermal resistance R
JC
2.0 °C/W
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-220AB V20120S-M3/4W 1.88 4W 50/tube Tube
TO-262AA VI20120S-M3/4W 1.45 4W 50/tube Tube
TO-220AB V20120SHM3/4W
(1)
1.88 4W 50/tube Tube
TO-262AA VI20120SHM3/4W
(1)
1.45 4W 50/tube Tube
V20120S, VI20120S
www.vishay.com
Vishay General Semiconductor
Revision: 12-Dec-16
3
Document Number: 89243
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Forward Power Dissipation Characteristics
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Characteristics
Fig. 5 - Typical Transient Thermal Impedance
Fig. 6 - Typical Junction Capacitance
Case Temperature (°C)
Average Forward Current (A)
20
25
15
10
5
0
0 25 50 75 100 125 150 175
Resistive or Inductive Load
Mounted on Specific Heatsink
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.8
D = 1.0
20
18
16
14
12
10
8
6
4
2
0
0 5 10 15 20 25
Average Forward Current (A)
Average Power Loss (W)
D = t
p
/T t
p
T
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
T
A
= 150 °C
T
A
= 125 °C
T
A
= 100 °C
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
T
A
= 25 °C
0.001
0.01
0.1
1
10
100
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (mA)
T
A
= 150 °C
T
A
= 125 °C
T
A
= 25 °C
T
A
= 100 °C
0.1
1
10
0.01 0.1 1 10 100
Junction to Case
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
10
100
1000
10 000
0.1 1 10 100
Reverse Voltage (V)
Junction Capacitance (pF)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
P1-P3P4-P5

2N6517TA

Mfr. #:
Buy 2N6517TA
Manufacturer:
ON Semiconductor / Fairchild
Description:
Bipolar Transistors - BJT NPN Si Transistor Epitaxial
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet