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TSM2305CX RFG

P1-P3P4-P6
TSM2305
20V P-Channel MOSFET
Document Number:
DS_P0000046 1
Version: E15
SOT
-
2
3
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(mΩ) I
(A)
-20
55 @ V
GS
=-4.5V -3.2
80 @ V
GS
=-2.5V -2.7
130 @ V
GS
=-1.8V -2.0
Features
● Advance Trench Process Technology
● High Density Cell Design for Ultra Low On-resistance
Application
● Battery Management
● High Speed Switch
Ordering Information
Part No. Package
Packing
TSM2305CX RFG SOT-23 3Kpcs / 7” Reel
Note: “G” denotes Halogen Free Product.
Absolute Maximum Rating
(T
A
=25°C unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage V
DS
-20 V
Gate-Source Voltage V
GS
±8 V
Continuous Drain Current I
D
-3.2 A
Pulsed Drain Current I
DM
-10 A
Continuous Source Current (Diode Conduction)
a,b
I
S
-1 A
Maximum Power Dissipation
T
A
=25°C
P
D
1.25
W
T
A
=75°C 0.8
Operating Junction Temperature T
J
+150 °C
Operating Junction and Storage Temperature Range T
J
, T
STG
-55 to +150 °C
Thermal Performance
Parameter Symbol Limit Unit
Junction to Case Thermal Resistance RӨ
JC
80 °C/W
Junction to Ambient Thermal Resistance (PCB mounted) RӨ
JA
150 °C/W
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on a 1 in
2
pad of 2oz Cu, t ≤ 10 sec.
Block Diagram
P-Channel MOSFET
Pin
Definition
:
1. Gate
2. Source
3. Drain
TSM2305
20V P-Channel MOSFET
Document Number:
DS_P0000046 2
Version: E15
Electrical Specifications
(Ta = 25°C unless otherwise noted)
Parameter Conditions Symbol
Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V
GS
= 0V, I
D
= 250µA BV
DSS
-20 -- -- V
Gate Threshold Voltage V
DS
= V
GS
, I
D
= 250µA V
GS(TH)
-0.45 -0.7 -1 V
Gate Body Leakage V
GS
= ±8V, V
DS
= 0V I
GSS
-- -- ±100 nA
Zero Gate Voltage Drain Current V
DS
= -16V, V
GS
= 0V I
DSS
-- -- 1.0 µA
Drain-Source On-State Resistance
V
GS
= -4.5V, I
D
= -3.2A
R
DS(ON)
-- 44 55
mΩ V
GS
= -2.5V, I
D
= -2.7A -- 65 80
V
GS
= -1.8V, I
D
= -2.0A -- 90 130
Diode Forward Voltage I
S
= -1A, V
GS
= 0V V
SD
-- -0.8 -1.3 V
Dynamic
b
Gate Resistance V
GS
= V
DS
=0V, f=1MHz R
g
-- 10 -- Ω
Total Gate Charge
V
DS
= -10V, I
D
= -3.2A,
V
GS
= -4.5V
Q
g
-- 10 20
nC
Gate-Source Charge Q
gs
-- 0.7 --
Gate-Drain Charge Q
gd
-- 4 --
Input Capacitance
V
DS
= -10V, V
GS
= 0V,
f = 1.0MHz
C
iss
-- 990 --
pF
Output Capacitance C
oss
-- 125 --
Reverse Transfer Capacitance C
rss
-- 100 --
Switching
b.c
Turn-On Delay Time
V
DD
= -10V, R
L
= 15Ω,
I
D
= -1A, V
GEN
= -4.5V,
R
G
= 6Ω
t
d(on)
-- 12 24
nS
Turn-On Rise Time t
r
-- 23 50
Turn-Off Delay Time t
d(off)
-- 50 100
Turn-Off Fall Time t
f
-- 18 35
Notes:
a. pulse test: PW ≤ 300µS, duty cycle ≤ 2%
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
TSM2305
20V P-Channel MOSFET
Document Number:
DS_P0000046 3
Version: E15
Electrical Characteristics Curve
(Ta = 25°C, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
P1-P3P4-P6

TSM2305CX RFG

Mfr. #:
Buy TSM2305CX RFG
Manufacturer:
Taiwan Semiconductor
Description:
MOSFET 20V P Channel Mosfet
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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