IXFH10N80P Datasheet IXFA10N80P, IXFP10N80P, IXFH10N80P | P1-P3

DS99432G(6/18)

Polar

TM

HiPerFET

Power MOSFET

IXFA10N80P

IXFP10N80P

IXFQ10N80P

IXFH10N80P

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

Features



International Standard Packages



Avalanche Rated



Low Package Inductance



Easy to Drive and to Protect

Advantages



Easy to Mount



Space Savings



High Power Density

Applications



Switched-Mode and Resonant-Mode

Power Supplies



DC-DC Converters



Laser Drivers



AC and DC Motor Drives



Robotics and Servo Controls

Symbol Test Conditions Characteristic Values

(T

J

= 25C Unless Otherwise Specified) Min. Typ. Max.

BV

DSS

V

GS

= 0V, I

D

= 250A 800 V

V

GS(th)

V

DS

= V

GS

, I

D

= 2.5mA 3.0 5.5 V

I

GSS

V

GS

=  30V, V

DS

= 0V 100 nA

I

DSS

V

DS

= V

DSS

, V

GS

= 0V 25 A

T

J

= 150C 500A

R

DS(on)

V

GS

= 10V, I

D

= 0.5 • I

D25

, Note 1 1.1 

V

DSS

= 800V

I

D25

= 10A

R

DS(on)



 1.1





t

rr



 250ns

Symbol Test Conditions Maximum Ratings

V

DSS

T

J

= 25C to 150C 800 V

V

DGR

T

J

= 25C to 150C, R

GS

= 1M 800 V

V

GSS

Continuous 30 V

V

GSM

Transient 40 V

I

D25

T

C

= 25C10A

I

DM

T

C

= 25C, Pulse Width Limited by T

JM

30 A

I

A

T

C

= 25C5A

E

AS

T

C

= 25C 600 mJ

dV/dt I

S

 I

DM

, V

DD

 V

DSS

, T

J

 150C 10 V/ns

P

D

T

C

= 25C 300 W

T

J

-55 ... +150 C

T

JM

150 C

T

stg

-55 ... +150 C

T

L

Maximum Lead Temperature for Soldering 300 °C

T

SOLD

1.6 mm (0.062in.) from Case for 10s 260 °C

F

C

Mounting Force (TO-263) 10..65 / 2.2..14.6 N/lb

M

d

Mounting Torque (TO-220, TO-247 & TO-3P) 1.13 / 10 Nm/lb.in

Weight TO-263 2.5 g

TO-220 3.0 g

TO-3P 5.5 g

TO-247 6.0 g

G

D

S

D (Tab)

TO-3P (IXFQ)

G = Gate D = Drain

S = Source Tab = Drain

TO-247 (IXFH)

G

S

D (Tab)

D

TO-263 (IXFA)

G

D (Tab)

S

D (Tab)

S

G

D

TO-220 (IXFP)

IXFA10N80P IXFP10N80P

IXFQ10N80P IXFH10N80P

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

Note 1. Pulse test, t  300 s, duty cycle d  2 %

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Symbol Test Conditions Characteristic Values

(T

J

= 25C, Unless Otherwise Specified) Min. Typ. Max

g

fs

V

DS

= 20V, I

D

= 0.5 • I

D25

, Note 1 7 11 S

C

iss

2050 pF

C

oss

V

GS

= 0V, V

DS

= 25V, f = 1MHz 172 pF

C

rss

16 pF

t

d(on)

21 ns

t

r

22 ns

t

d(off)

62 ns

t

f

22 ns

Q

g(on)

40 nC

Q

gs

V

GS

= 10V, V

DS

= 0.5 • V

DSS

, I

D

= 0.5 • I

D25

12 nC

Q

gd

14 nC

R

thJC

0.42 C/W

R

thCS

(TO-220) 0.50 C/W

R

thCS

(TO-247 & TO-3P) 0.25 C/W

Source-Drain Diode

Symbol Test Conditions Characteristic Values

(T

J

= 25C, Unless Otherwise Specified) Min. Typ. Max

I

S

V

GS

= 0V 10 A

I

SM

Repetitive, Pulse WidthLlimited by T

JM

30 A

V

SD

I

F

= I

S

, V

GS

= 0V, Note 1 1.5 V

t

rr

200 250 ns

I

RM

3.0 A

Q

RM

0.6 μC

I

F

= 10A, V

GS

= 0V

-di/dt = 100A/s

V

R

= 100V

Resistive Switching Times

V

GS

= 10V, V

DS

= 0.5 • V

DSS

, I

D

= 0.5 • I

D25

R

G

= 5 (External)

IXFA10N80P IXFP10N80P

IXFQ10N80P IXFH10N80P

Fig. 1. Output Characteristics @ T

J

= 25

o

C

0

1

2

3

4

5

6

7

8

9

10

02468101214

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

8V

6V

5V

7V

Fig. 2. Extended Output Characteristics @ T

J

= 25

o

C

0

2

4

6

8

10

12

14

16

18

0 5 10 15 20 25 30

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

8V

5V

6V

7V

Fig. 3. Output Characteristics @ T

J

= 125

o

C

0

1

2

3

4

5

6

7

8

9

10

0 5 10 15 20 25 30

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

7V

5V

6V

Fig. 4. R

DS(on)

Normalized to I

D

= 5A Value vs.

Junction Temperature

0.4

0.8

1.2

1.6

2.0

2.4

2.8

3.2

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

R

DS(on)

- Normalized

V

GS

= 10V

I

D

= 10A

I

D

= 5A

Fig. 5. R

DS(on)

Normalized to I

D

= 5A Value vs.

Drain Current

0.6

1.0

1.4

1.8

2.2

2.6

3.0

024681012141618

I

D

- Amperes

R

DS(on)

- Normalized

T

J

= 125

o

C

T

J

= 25

o

C

V

GS

= 10V

Fig. 6. Maximum Drain Current vs. Case Temperature

0

2

4

6

8

10

-50 -25 0 25 50 75 100 125 150

T

C

- Degrees Centigrade

I

D

- Amperes

IXFH10N80P

IXFH10N80P

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