MAX17005B/MAX17006B/MAX17015B
1.2MHz, Low-Cost,
High-Performance Chargers
16 ______________________________________________________________________________________
CC, CCI, CCS, and LVC Control Blocks
The MAX17005B/MAX17006B/MAX17015B control
input current (CCS control loop), charge current (CCI
control loop), or charge voltage (CC control loop),
depending on the operating condition. The three con-
trol loops, CC, CCI, and CCS are brought together
internally at the lowest voltage clamp (LVC) amplifier.
The output of the LVC amplifier is the feedback control
signal for the DC-DC controller. The minimum voltage
at the CC, CCI, or CCS appears at the output of the
LVC amplifier and clamps the other control loops to
within 0.3V above the control point. Clamping the other
two control loops close to the lowest control loop
ensures fast transition with minimal overshoot when
switching between different control loops (see the
Compensation
section). The CCS and CCI loops are
compensated internally, and the CC loop is compen-
sated externally.
Continuous-Conduction Mode
With sufficiently large charge current, the MAX17005B/
MAX17006B/MAX17015Bs’ inductor current never
crosses zero, which is defined as continuous-conduc-
tion mode. The controller starts a new cycle by turning
on the high-side MOSFET and turning off the low-side
MOSFET. When the charge-current feedback signal
(CSI) is greater than the control point (LVC), the CCMP
comparator output goes high and the controller initiates
the off-time by turning off the high-side MOSFET and
turning on the low-side MOSFET. The operating fre-
quency is governed by the off-time and is dependent
upon V
CSIN
and V
DCIN
.
The on-time can be determined using the following
equation:
where:
The switching frequency can then be calculated:
At the end of the computed off-time, the controller initi-
ates a new cycle if the control point (LVC) is greater
than 10mV (V
CSIP
- V
CSIN
referred), and the charge
current is less than the cycle-by-cycle current limit.
Restated another way, IMIN must be high, IMAX must
be low, and OVP must be low for the controller to initi-
ate a new cycle. If the peak inductor current exceeds
IMAX comparator threshold or the output voltage
exceeds the OVP threshold, then the on-time is termi-
nated. The cycle-by-cycle current limit effectively pro-
tects against overcurrent and short-circuit faults.
If during the off-time the inductor current goes to zero,
the ZCMP comparator output pulls high, turning off the
low-side MOSFET. Both the high- and low-side
MOSFETs are turned off until another cycle is ready to
begin. ZCOMP causes the MAX17005B/MAX17006B/
MAX17015B to enter into the discontinuous conduction
mode (see the
Discontinuous Conduction
section).
Discontinuous Conduction
The MAX17005B/MAX17006B/MAX17015B can also
operate in discontinuous conduction mode to ensure that
the inductor current is always positive. The MAX17005B/
MAX17006B/MAX17015B enter discontinuous conduction
mode when the output of the LVC control point falls below
10mV (referred at V
CSIP
- V
CSIN
). For RS2 = 10m, this
corresponds to a peak inductor current of 1A.
In discontinuous mode, a new cycle is not started until
the LVC voltage rises above IMIN. Discontinuous mode
operation can occur during conditioning charge of
overdischarged battery packs, when the charge cur-
rent has been reduced sufficiently by the CCS control
loop, or when the charger is in constant-voltage mode
with a nearly full battery pack.
Compensation
The charge voltage, charge current, and input current-
limit regulation loops are compensated separately. The
charge current and input current-limit loops, CCI and
CCS, are compensated internally, whereas the charge
voltage loop is compensated externally at CC.
For CC compensation, connect a 0.01µF capacitor at
CC. The crossover frequency occurs at:
where:
GMV = 0.125µA/mV
GM
OUT
= 5A/V
fGMG
k
C
CO CV OUT MV
OUT
_
.
×
×
17
2
π
f
tt
SW
ON OFF
=
+
1
I
Vt
L
RIPPLE
CSIN OFF
=
×
t
LI
VV
ON
RIPPLE
DCIN CSIN
=
×
-
MAX17005B/MAX17006B/MAX17015B
1.2MHz, Low-Cost,
High-Performance Chargers
______________________________________________________________________________________ 17
MOSFET Drivers
The DHI and DLO outputs are optimized for driving
moderate-sized power MOSFETs. The MOSFET drive
capability is the same for both the low-side and high-
sides switches. This is consistent with the variable duty
factor that occurs in the notebook computer environ-
ment where the battery voltage changes over a wide
range. There must be a low-resistance, low-inductance
path from the DLO driver to the MOSFET gate to pre-
vent shoot-through. Otherwise, the sense circuitry in the
MAX17005B/MAX17006B interpret the MOSFET gate as
off while there is still charge left on the gate. Use very
short, wide traces measuring 10 to 20 squares or fewer
(1.25mm to 2.5mm wide if the MOSFET is 25mm from
the device).
The high-side driver (DHI) swings from LX to 5V above
LX (BST) and has a typical impedance of 1.5 sourc-
ing and 0.8 sinking. The strong high-side MOSFET
driver eliminates most of the power dissipation due to
switching losses. The low-side driver (DLO) swings
from LDO to ground and has a typical impedance of 3
sinking and 3 sourcing. This helps prevent DLO from
being pulled up when the high-side switch turns on due
to capacitive coupling from the drain to the gate of the
low-side MOSFET. This places some restrictions on the
MOSFETs that can be used. Using a low-side
MOSFET with smaller gate-to-drain capacitance can
prevent these problems.
Design Procedure
MOSFET Selection
Choose the n-channel MOSFETs according to the maxi-
mum required charge current. The MOSFETs must be
able to dissipate the resistive losses plus the switching
losses at both V
DCIN(MIN)
and V
DCIN(MAX)
.
For the high-side MOSFET, the worst-case resistive
power losses occur at the maximum battery voltage
and minimum supply voltage:
Generally, a low gate-charge high-side MOSFET is pre-
ferred to minimize switching losses. However, the
R
DS(ON)
required to stay within package power dissi-
pation often limits how small the MOSFET can be. The
optimum occurs when the switching losses equal the
conduction losses. High-side switching losses do not
usually become an issue until the input is greater than
approximately 15V. Calculating the power dissipation in
N1 due to switching losses is difficult since it must
allow for difficult quantifying factors that influence the
turn-on and turn-off times. These factors include the
internal gate resistance, gate charge, threshold volt-
age, source inductance, and PCB layout characteris-
tics. The following switching-loss calculation provides
only a very rough estimate and is no substitute for
breadboard evaluation, preferably including a verifica-
tion using a thermocouple mounted on N1:
where t
TRANS
is the drivers transition time and can be
calculated as follows:
I
GSRC
and I
GSNK
are the peak gate-drive source/sink
current (3 sourcing and 0.8 sinking, typically). The
MAX17005B/MAX17006B/MAX17015B control the
switching frequency as shown in the
Typical Operating
Characteristics
.
The following is the power dissipated due to high-side
n-channel MOSFET’s output capacitance (C
RSS
):
The following high-side MOSFET’s loss is due to the
reverse-recovery charge of the low-side MOSFET’s
body diode:
Ignore PD
QRR
(HS) if a Schottky diode is used parallel
to a low-side MOSFET.
The total high-side MOSFET power dissipation is:
Switching losses in the high-side MOSFET can become
an insidious heat problem when maximum AC adapter
voltages are applied. If the high-side MOSFET chosen
for adequate R
DS(ON)
at low-battery voltages becomes
hot when biased from V
DCIN(MAX)
, consider choosing
another MOSFET with lower parasitic capacitance.
For the low-side MOSFET (N2), the worst-case power
dissipation always occurs at maximum input voltage:
PD LS
V
V
I
COND
CSIN MIN
CSSP MAX
CH
()
()
()
=
×1-
GGDSON
R
2
×
()
PD HS PD HS PD HS
TOTAL COND SW
() () ()≈+
() ()++PD HS PD HS
CRSS QRR
PD HS
QV f
QRR
RR CSSP SW
()=
××
2
2
PD HS
VCf
CRSS
CSSP RSS SW
()
××
2
2
t
II
QQ
TRANS
GSRC GSNK
GD GS
=+
×+
()
11
PD HS t V I f
SW TRANS CSSP CHG SW
() × × ×
1
2
PD HighSide
V
V
I
COND
CSIN MAX
DCIN MIN
CHG
()
()
()
2
×× R
DS ON()
MAX17005B/MAX17006B/MAX17015B
1.2MHz, Low-Cost,
High-Performance Chargers
18 ______________________________________________________________________________________
The following additional loss occurs in the low-side
MOSFET due to the body diode conduction losses:
The total power low-side MOSFET dissipation is:
These calculations provide an estimate and are not a
substitute for breadboard evaluation, preferably including
a verification using a thermocouple mounted on the
MOSFET.
Inductor Selection
The selection of the inductor has multiple trade-offs
between efficiency, transient response, size, and cost.
Small inductance is cheap and small, and has a better
transient response due to higher slew rate; however, the
efficiency is lower because of higher RMS current. High
inductance results in lower ripple so that the need of the
output capacitors for output-voltage ripple goes low.
The MAX17005B/MAX17006B/MAX17015B combine all
the inductor trade-offs in an optimum way by controlling
switching frequency. High-frequency operation permits
the use of a smaller and cheaper inductor, and conse-
quently results in smaller output ripple and better tran-
sient response.
The charge current, ripple, and operating frequency
(off-time) determine the inductor characteristics. For
optimum efficiency, choose the inductance according
to the following equation:
where k = 35ns/V.
For optimum size and inductor current ripple, choose
LIR
MAX
= 0.4, which sets the ripple current to 40% the
charge current and results in a good balance between
inductor size and efficiency. Higher inductor values
decrease the ripple current. Smaller inductor values
save cost but require higher saturation current capabili-
ties and degrade efficiency.
Inductor L1 must have a saturation current rating of at
least the maximum charge current plus 1/2 the ripple
current (I
L
):
I
SAT
= I
CHG
+ (1/2) I
L
The ripple current is determined by:
Input Capacitor Selection
The input capacitor must meet the ripple current
requirement (I
RMS
) imposed by the switching currents.
Nontantalum chemistries (ceramic, aluminum, or
OS-CON) are preferred due to their resilience to power-
up and surge currents:
The input capacitors should be sized so that the tem-
perature rise due to ripple current in continuous conduc-
tion does not exceed approximately 10°C. The
maximum ripple current occurs at 50% duty factor or
V
DCIN
= 2 x V
BATT
, which equates to 0.5 x I
CHG
. If the
application of interest does not achieve the maximum
value, size the input capacitors according to the worst-
case conditions.
Output Capacitor Selection
The output capacitor absorbs the inductor ripple cur-
rent and must tolerate the surge current delivered from
the battery when it is initially plugged into the charger.
As such, both capacitance and ESR are important
parameters in specifying the output capacitor as a filter
and to ensure the stability of the DC-to-DC converter
(see the
Compensation
section.) Beyond the stability
requirements, it is often sufficient to make sure that the
output capacitor’s ESR is much lower than the battery’s
ESR. Either tantalum or ceramic capacitors can be
used on the output. Ceramic devices are preferable
because of their good voltage ratings and resilience to
surge currents. Choose the output capacitor based on:
Choose k
CAP-BIAS
is a derating factor of 2 for typical 25V-
rated ceramic capacitors.
For f
SW
= 800kHz, I
RIPPLE
= 1A, and to get V
BATT
=
70mV, choose C
OUT
as 4.7µF.
If the internal resistance of battery is close to the ESR of
the output capacitor, the voltage ripple is shared with
the battery and is less than calculated.
C
I
fV
k
OUT
RIPPLE
SW CSIN
CAP BIAS
=
××
×
8
II
VVV
V
RMS CHG
CSIN DCIN CSIN
DCIN
=
×
()
×
-
∆=
×
I
kV
L
L
IN
2
4
L
kV
ILIR
IN
CHG MAX
=
×
××
2
4
PD LS PD LS PD LS
TOTAL COND BDY
() () ()≈+
PD LS I V
BDY PEAK
() . . ×005 04

MAX17015BETP+

Mfr. #:
Manufacturer:
Maxim Integrated
Description:
Battery Management 1.2MHz High-Perf Charger
Lifecycle:
New from this manufacturer.
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