CREAT BY ART
- Low forward voltage drop
- Low power loss, high efficiency
- Guardring for overvoltage protection
- High surge current capability
- Halogen-free according to IEC 61249-2-21 definition
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test,
with prefix "H" on packing code meet JESD 201 class 2 whisker test
V
RRM
20 30 40 50 60 90 100 150 V
V
RMS
14 21 28 35 42 63 70 105 V
V
DC
20 30 40 50 60 90 100 150 V
I
F(AV)
A
Cj pF
R
θJA
O
C/W
T
J
O
C
T
STG
O
C
Document Number: DS_D1308042 Version: H13
Note 2: Measured at 1.0 MHz and Applied V
R
=4.0 Volts
Operating junction temperature range - 55 to +125 - 55 to +150
Storage temperature range - 55 to +150
Note 1: Pulse test with PW=300 μs, 1% duty cycle
-2
Typical thermal resistance 50
Typical junction capacitance (Note 2) 110 80 28
V
Maximum reverse current @ rated VR T
J
=25 ℃
T
J
=100℃
T
J
=125 ℃
I
R
0.5 0.1
mA10 5 -
-
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
25 A
Maximum instantaneous forward voltage (Note 1)
@ 1 A
V
F
0.55 0.70 0.80 0.90
SRT
115
UNIT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current 1
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T
A
=25℃ unless otherwise noted)
PARAMETER SYMBOL
SRT
12
SRT
13
SRT
14
SRT
15
SRT
16
SRT
19
SRT
110
MECHANICAL DATA
Case: TS-1
TS-1
Weight: 0.2g (approximately)
SRT12 thru SRT115
Taiwan Semiconductor
Schottk
Barrier Rectifier
FEATURES
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
