©2014 Silicon Storage Technology, Inc. DS-70005004G 10/14
10
2.4 GHz High-Efficiency, High-Gain Power Amplifier Module
SST12LP17E
Data Sheet
Figure 8: Detector Characteristics versus Output Power
Figure 9: Typical Schematic for High-Efficiency 802.11b/g/n Applications
1426 F8.2
0.20
0.30
0.40
0.50
0.60
0.70
0.80
0.90
1.00
10 11 12 13 14 15 16 17 18 19 20 21 22
Detector Voltage (V)
Output Power (dBm)
Detector Voltage versus Output Power
Freq=2.412 GHz
Freq=2.442 GHz
Freq=2.472 GHz
1426 F9.3
4.7
µF*
50
Ω
RFIN
RFOUT
50
Ω
Vdet
VREG
12LP17E
2X2 8L X2SON
Top View
4
3
2
1
5
6
7
8
VCC
*
V
CC1
and V
CC2
must
be separated by a short
inductive trace. This can
be replaced by a 1 nH
inductor if prefered.
2mm trace*
©2014 Silicon Storage Technology, Inc. DS-70005004G 10/14
11
2.4 GHz High-Efficiency, High-Gain Power Amplifier Module
SST12LP17E
Data Sheet
Product Ordering Information
Valid combinations for SST12LP17E
SST12LP17E-XX8E SST12LP17E-QU8E
SST12LP17E Evaluation Kits
SST12LP17E-XX8E-K SST12LP17E-QU8E-K
Note:Valid combinations are those products in mass production or will be in mass production. Consult your SST
sales representative to confirm availability of valid combinations and to determine availability of new combi-
nations.
SST 12 LP 17E - XX8E
XX XX XXX
-
XXXX
Environmental Attribute
E
1
= non-Pb contact (lead) finish
Package Modifier
8 = 8 contact
Package Type
XX = X2SON
QU = USON
Product Family Identifier
Product Type
P = Power Amplifier
Voltage
L = 3.0-3.6V
Frequency of Operation
2 = 2.4 GHz
Product Line
1 = RF Products
1. Environmental suffix “E” denotes non-Pb sol-
der. SST non-Pb solder devices are “RoHS
Compliant”.
©2014 Silicon Storage Technology, Inc. DS-70005004G 10/14
12
2.4 GHz High-Efficiency, High-Gain Power Amplifier Module
SST12LP17E
Data Sheet
Packaging Diagrams
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
Note:
Microchip Technology Drawing C04-14006A Sheet 1 of 1
8-Lead Ultra Thin Small Outline No-Leads (QU8E/F) - 2x2 mm Body [USON]
Note:
1. Similar to JEDEC JEP95 XQFN/XSON variants, though number of contacts and some dimensions are different.
2. The topside pin #1 indicator is laser engraved; its approximate shape and location is as shown.
3. From the bottom view, the pin #1 indicator may be either a curved indent or a 45-degree chamfer.
4. The external paddle is electrically connected to the die back-side and to VSS.
This paddle must be soldered to the PC board; it is required to connect this paddle to the VSS of the unit.
Connection of this paddle to any other voltage potential will result in shorts and electrical malfunction of the device.
5.
Untoleranced dimensions are nominal target dimensions.
6. All linear dimensions are in millimeters (max/min).

SST12LP17E-QU8E

Mfr. #:
Manufacturer:
Microchip Technology
Description:
RF Amplifier WLAN 11b/g/n Fully-integrated PA
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet