IRLS/SL3034PbF
2 www.irf.com
Pulse width ≤ 400µs; duty cycle ≤ 2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as
C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer
to applocation note # AN-994.
R
θ
is measured at T
J
approximately 90°C
R
θJC
value shown is at time zero
Notes:
Calcuted continuous current based on maximum allowable junction
temperature Bond wire current limit is 195A. Note that current
limitation arising from heating of the device leds may occur with
some lead mounting arrangements.
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.013mH
R
G
= 25Ω, I
AS
= 195A, V
GS
=10V. Part not recommended for use
above this value .
I
SD
≤ 195A, di/dt ≤ 841A/µs, V
DD
≤ V
(BR)DSS
, T
J
≤ 175°C.
S
D
G
Static @ T
J
= 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Unit
V
(BR)DSS
Drain-to-Source Breakdown Volta
e 40 ––– ––– V
∆V
(BR)DSS
∆T
J
Breakdown Volta
e Temp. Coefficient ––– 0.04 ––– V/°C
––– 1.4 1.7
––– 1.6 2.0
V
GS(th)
Gate Threshold Volta
e 1.0 ––– 2.5 V
I
DSS
Drain-to-Source Leaka
e Current ––– ––– 20
––– ––– 250
I
GSS
Gate-to-Source Forward Leaka
e ––– ––– 100
Gate-to-Source Reverse Leaka
e ––– ––– -100
R
G(int)
Internal Gate Resistance ––– 2.1 –––
Ω
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Unit
fs Forward Transconductance 286 ––– ––– S
Q
g
Total Gate Char
e ––– 108 162
Q
gs
Gate-to-Source Char
e ––– 29 –––
Q
gd
Gate-to-Drain ("Miller") Char
e ––– 54 –––
Q
sync
Total Gate Char
e Sync. (Q
g
- Q
gd
)
––– 54 –––
t
d(on)
Turn-On Delay Time ––– 65 –––
t
r
Rise Time ––– 827 –––
t
d(off)
Turn-Off Delay Time ––– 97 –––
t
f
Fall Time ––– 355 –––
C
iss
Input Capacitance ––– 10315 –––
C
oss
Output Capacitance ––– 1980 –––
C
rss
Reverse Transfer Capacitance ––– 935 –––
C
oss
eff. (ER)
Effective Output Capacitance (Energy Related)
––– 2378 –––
C
oss
eff. (TR)
Effective Output Capacitance (Time Related)
––– 2986 –––
Diode Characteristics
Symbol Parameter Min. Typ. Max. Unit
I
S
Continuous Source Current ––– –––
(Body Diode)
I
SM
Pulsed Source Current ––– –––
(Body Diode)
V
SD
Diode Forward Volta
e ––– ––– 1.3 V
t
rr
Reverse Recovery Time ––– 39 –––
T
J
= 25°C V
R
= 34V,
––– 41 –––
T
J
= 125°C I
F
= 195A
Q
rr
Reverse Recovery Char
e ––– 39 –––
T
J
= 25°C
di
dt = 100A
µs
––– 46 –––
T
J
= 125°C
I
RRM
Reverse Recovery Current ––– 1.7 ––– A
T
J
= 25°C
t
on
Forward Turn-On Time Intrinsic turn-on time is ne
li
ible (turn-on is dominated by LS+LD)
V
GS
= -20V
showing the
V
DS
= 20V
Conditions
V
GS
= 4.5V
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 32V
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 5mA
V
GS
= 10V, I
D
= 195A
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 40V, V
GS
= 0V
V
DS
= 40V, V
GS
= 0V, T
J
= 125°C
ns
V
GS
= 0V, V
DS
= 0V to 32V
MOSFET symbol
T
J
= 25°C, I
S
= 195A, V
GS
= 0V
integral reverse
p-n junction diode.
V
GS
= 20V
nC
µA
nA
nC
ns
R
DS(on)
Static Drain-to-Source On-Resistance
pF
A
343
1372
V
GS
= 4.5V, I
D
= 172A
m
Ω
I
D
= 195A
R
G
= 2.1Ω
V
GS
= 4.5V
V
DD
= 26V
I
D
= 185A, V
DS
=0V, V
GS
= 4.5V
Conditions
V
DS
= 10V, I
D
= 195A
I
D
= 185A
