BCW60BE6327HTSA1

P1-P3 P4-P6 P7-P9 P10-P11

2007-04-20

1

BCW60, BCX70

1

2

3

NPN Silicon AF Transistors

• For AF input stages and driver applications

• High current gain

• Low collector-emitter saturation voltage

• Low noise between 30 Hz and 15 kHz

• Complementary types: BCW61, BCX71 (PNP)

• Pb-free (RoHS compliant) package

1)

• Qualified according AEC Q101

Type Marking Pin Configuration Package

BCW60B

BCW60C

BCW60D

BCW60FF

BCX70G

BCX70H

BCX70J

BCX70K

ABs

ACs

ADs

AFs

AGs

AHs

AJs

AKs

1=B

1=B

1=B

1=B

1=B

1=B

1=B

1=B

2=E

2=E

2=E

2=E

2=E

2=E

2=E

2=E

3=C

3=C

3=C

3=C

3=C

3=C

3=C

3=C

SOT23

SOT23

SOT23

SOT23

SOT23

SOT23

SOT23

SOT23

1

Pb-containing package may be available upon special request

2007-04-20

2

BCW60, BCX70

Maximum Ratings

Parameter

Symbol Value Unit

Collector-emitter voltage

BCW60, ...60FF

BCX70

V

CEO

32

45

V

Collector-base voltage

BCW60, ...60FF

BCX70

V

CBO

32

45

Emitter-base voltage V

EBO

6

Collector current I

C

100 mA

Peak collector current I

CM

200

Peak base current I

BM

200

Total power dissipation

T

S

≤ 71 °C

P

tot

330 mW

Junction temperature T

j

150 °C

Storage temperature T

stg

-65 ... 150

Thermal Resistance

Parameter

Symbol Value Unit

Junction - soldering point

1)

R

thJS

≤ 240

K/W

1

For calculation of R

thJA

please refer to Application Note Thermal Resistance

2007-04-20

3

BCW60, BCX70

Electrical Characteristics at T

A

= 25°C, unless otherwise specified

Parameter

Symbol Values Unit

min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage

I

C

= 10 mA, I

B

= 0 , BCW60, ...60FF

I

C

= 10 mA, I

B

= 0 , BCX70

V

(BR)CEO

32

45

-

-

-

-

V

Collector-base breakdown voltage

I

C

= 10 µA, I

E

= 0 , BCW60, ...60FF

I

C

= 10 µA, I

E

= 0 , BCX70

V

(BR)CBO

32

45

-

-

-

-

Emitter-base breakdown voltage

I

E

= 1 µA, I

C

= 0

V

(BR)EBO

6 - -

Collector-base cutoff current

V

CB

= 32 V, I

E

= 0 , BCW60, ...60FF

V

CB

= 45 V, I

E

= 0 , BCX70

V

CB

= 32 V, I

E

= 0 , T

A

= 150 °C, BCW60, ...60FF

V

CB

= 45 V, I

E

= 0 , T

A

= 150 °C, BCX70

I

CBO

-

-

-

-

-

-

-

-

0.02

0.02

20

20

µA

Emitter-base cutoff current

V

EB

= 4 V, I

C

= 0

I

EBO

- - 20 nA

DC current gain-

I

C

= 10 µA, V

CE

= 5 V, h

FE

-grp. G

I

C

= 10 µA, V

CE

= 5 V, h

FE

-grp. B/ H

I

C

= 10 µA, V

CE

= 5 V, h

FE

-grp. C/ J/ FF

I

C

= 10 µA, V

CE

= 5 V, h

FE

-grp. D/ K

I

C

= 2 mA, V

CE

= 5 V, h

FE

-grp. G

I

C

= 2 mA, V

CE

= 5 V, h

FE

-grp. B/ H

I

C

= 2 mA, V

CE

= 5 V, h

FE

-grp. C/ J/ FF

I

C

= 2 mA, V

CE

= 5 V, h

FE

-grp. D/ K

I

C

= 50 mA, V

CE

= 1 V, h

FE

-grp. G

I

C

= 50 mA, V

CE

= 1 V, h

FE

-grp. B/ H

I

C

= 50 mA, V

CE

= 1 V, h

FE

-grp. C/ J/ FF

I

C

= 50 mA, V

CE

= 1 V, h

FE

-grp. D/ K

h

FE

20

20

40

100

120

180

250

380

50

70

90

100

140

200

300

460

170

250

350

500

-

-

-

-

-

-

-

-

220

310

460

630

-

-

-

-

-

P1-P3 P4-P6 P7-P9 P10-P11

BCW60BE6327HTSA1

Mfr. #:

Buy BCW60BE6327HTSA1

Manufacturer:

Infineon Technologies

Description:

Bipolar Transistors - BJT AF TRANSISTORS

Lifecycle:

New from this manufacturer.

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