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BCX70KE6327HTSA1

P1-P3P4-P6P7-P9P10-P11
2007-04-20
4
BCW60, BCX70
DC Electrical Characteristics
Parameter
Symbol Values Unit
min. typ. max.
Characteristics
Collector-emitter saturation voltage
1)
I
C
= 10 mA, I
B
= 0.25 mA
I
C
= 50 mA, I
B
= 1.25 mA
V
CEsat
-
-
0.12
0.2
0.25
0.55
V
Base emitter saturation voltage
1)
I
C
= 10 mA, I
B
= 0.25 mA
I
C
= 50 mA, I
B
= 1.25 mA
V
BEsat
-
-
0.7
0.83
0.85
1.05
Base-emitter voltage
1)
I
C
= 10 µA, V
CE
= 5 V
I
C
= 2 mA, V
CE
= 5 V
I
C
= 50 mA, V
CE
= 1 V
V
BE(ON)
-
0.58
-
0.52
0.65
0.78
-
0.7
-
1
Pulse test: t < 300µs; D < 2%
2007-04-20
5
BCW60, BCX70
AC Characteristics
Transition frequency
I
C
= 20 mA, V
CE
= 5 V, f = 100 MHz
f
T
- 250 - MHz
Collector-base capacitance
V
CB
= 10 V, f = 1 MHz
C
cb
- 0.95 - pF
Emitter-base capacitance
V
EB
= 0.5 V, f = 1 MHz
C
eb
- 9 -
Short-circuit input impedance
I
C
= 2 mA, V
CE
= 5 V, f = 1 kHz, h
FE
-grp. G
I
C
= 2 mA, V
CE
= 5 V, f = 1 kHz, h
FE
-grp. B/ H
I
C
= 2 mA, V
CE
= 5 V, f = 1 kHz, h
FE
-grp. C/ J /FF
I
C
= 2 mA, V
CE
= 5 V, f = 1 kHz, h
FE
-grp. D/ K
h
11e
-
-
-
-
2.7
3.6
4.5
7.5
-
-
-
-
kΩ
Open-circuit reverse voltage transf. ratio
I
C
= 2 mA, V
CE
= 5 V, f = 1 kHz, h
FE
-grp. G
I
C
= 2 mA, V
CE
= 5 V, f = 1 kHz, h
FE
-grp. B /H
I
C
= 2 mA, V
CE
= 5 V, f = 1 kHz, h
FE
-grp. C/ J/ FF
I
C
= 2 mA, V
CE
= 5 V, f = 1 kHz, h
FE
-grp. D/ K
h
12e
-
-
-
-
1.5
2
2
3
-
-
-
-
10
-4
Short-circuit forward current transf. ratio
I
C
= 2 mA, V
CE
= 5 V, f = 1 kHz, h
FE
-grp. G
I
C
= 2 mA, V
CE
= 5 V, f = 1 kHz, h
FE
-grp. B/ H
I
C
= 2 mA, V
CE
= 5 V, f = 1 kHz, h
FE
-grp. C/ J/ FF
I
C
= 2 mA, V
CE
= 5 V, f = 1 kHz, h
FE
-grp. D/ K
h
21e
-
-
-
-
200
260
330
520
-
-
-
-
-
Open-circuit output admittance
I
C
= 2 mA, V
CE
= 5 V, f = 1 kHz, h
FE
-grp. G
I
C
= 2 mA, V
CE
= 5 V, f = 1 kHz, h
FE
-grp. B/ H
I
C
= 2 mA, V
CE
= 5 V, f = 1 kHz, h
FE
-grp. C/ J/ FF
I
C
= 2 mA, V
CE
= 5 V, f = 1 kHz, h
FE
-grp. D/ K
h
22e
-
-
-
-
18
24
30
50
-
-
-
-
µS
Noise figure
I
C
= 200 µA,
V
CE
= 5 V, f = 1 kHz,
D f = 200 Hz, R
S
= 2 kΩ, h
FE
-grp. B - K
I
C
= 200 µA, V
CE
= 5 V, f = 1 kHz,
∆ f = 200 Hz, R
S
= 2 kΩ, h
FE
-grp. FF
F
-
-
2
1
-
2
dB
Equivalent noise voltage
I
C
= 200 µA, V
CE
= 5 V, R
S
= 2 kΩ,
f = 10...50 Hz , h
FE
-grp. FF
V
n
- - 0.135 µV
2007-04-20
6
BCW60, BCX70
DC current gain h
FE
= ƒ(I
C
)
V
CE
= 5 V
10
EHP00334BCW 60/BCX 70
-2 2
10mA
0
10
3
10
5
5
10
-1
10
0
10
1
C
FE
h
Ι
1
10
2
10
˚C
100
5
25
˚C
-50
˚C
Collector-emitter saturation voltage
I
C
= ƒ(V
CEsat
), h
FE
= 10
0
10
EHP00332BCW 60/BCX 70
CEsat
V
V 0.5
-1
10
0
10
1
2
10
5
5
Ι
C
mA
0.1 0.2 0.3 0.4
˚C
100
25
˚C
-50
˚C
Base-emitter saturation voltage
I
C
= ƒ(V
BEsat
), h
FE
= 40
0
10
EHP00331BCW 60/BCX 70
BE sat
V
0.6 V 1.2
-1
10
0
10
1
2
10
5
5
Ι
C
mA
0.2 0.4 0.8
˚C
25
100
˚C
-50
˚C
Collector current I
C
= ƒ(V
BE
)
V
CE
= 5V
0
10
EHP00333BCW 60/BCX 70
BE
V
0.5 V 1.0
-2
10
-1
10
0
2
10
5
5
Ι
C
mA
5
1
10
˚C
100 25 -50
˚C ˚C
P1-P3P4-P6P7-P9P10-P11

BCX70KE6327HTSA1

Mfr. #:
Buy BCX70KE6327HTSA1
Manufacturer:
Infineon Technologies
Description:
Bipolar Transistors - BJT AF TRANS GP BJT NPN 45V 0.1A
Lifecycle:
New from this manufacturer.
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