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NJL4302DG

P1-P3P4-P6P7-P7
© Semiconductor Components Industries, LLC, 2006
June, 2006 − Rev. 2
1 Publication Order Number:
NJL4281D/D
NJL4281D (NPN)
NJL4302D (PNP)
Complementary
ThermalTrakt Transistors
The ThermalTrak family of devices has been designed to eliminate
thermal equilibrium lag time and bias trimming in audio amplifier
applications. They can also be used in other applications as transistor
die protection devices.
Features
• Thermally Matched Bias Diode
• Instant Thermal Bias Tracking
• Absolute Thermal Integrity
• High Safe Operating Area
• Pb−Free Packages are Available*
Benefits
• Eliminates Thermal Equilibrium Lag Time and Bias Trimming
• Superior Sound Quality Through Improved Dynamic Temperature
Response
• Significantly Improved Bias Stability
• Simplified Assembly
♦ Reduced Labor Costs
♦ Reduced Component Count
• High Reliability
Applications
• High−End Consumer Audio Products
♦ Home Amplifiers
♦ Home Receivers
• Professional Audio Amplifiers
♦ Theater and Stadium Sound Systems
♦ Public Address Systems (PAs)
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
TO−264, 5 LEAD
CASE 340AA
STYLE 1
http://onsemi.com
BIPOLAR POWER
TRANSISTORS
15 AMP, 350 VOLT, 230 WATT
Device Package Shipping
ORDERING INFORMATION
NJL4281D TO−264 25 Units / Rail
25 Units / Rail
25 Units / Rail
TO−264
(Pb−Free)
25 Units / Rail
NJL4281DG
NJL4302D
NJL4302DG
TO−264
(Pb−Free)
TO−264
MARKING DIAGRAM
NJLxxxxD =Device Code
xxxx = 4281 or 4302
G = Pb−Free Package
A =Assembly Location
YY =Year
WW =Work Week
NJLxxxxDG
AYYWW
Thermal Trak
SCHEMATIC
NJL4281D (NPN) NJL4302D (PNP)
http://onsemi.com
2
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Rating Symbol Value Unit
Collector−Emitter Voltage V
CEO
350 Vdc
Collector−Base Voltage V
CBO
350 Vdc
Emitter−Base Voltage V
EBO
5 Vdc
Collector−Emitter Voltage − 1.5 V V
CEX
350 Vdc
Collector Current − Continuous
− Peak (Note 1)
I
C
15
30
Adc
Base Current − Continuous I
B
1.5 Adc
Total Power Dissipation @ T
C
= 25°C
Derate Above 25°C
P
D
230
1.84
W
W/°C
Operating and Storage Junction Temperature Range T
J
, T
stg
− 65 to +150
°C
DC Blocking Voltage V
R
200 V
Average Rectified Forward Current I
F(AV)
1.0 A
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case
R
q
JC
0.54 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%.
ATTRIBUTES
Characteristic Value
ESD Protection Human Body Model
Machine Model
>8000 V
> 400 V
Flammability Rating UL 94 V−0 @ 0.125 in
NJL4281D (NPN) NJL4302D (PNP)
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector Emitter Sustaining Voltage
(I
C
= 50 mA, I
B
= 0)
V
CE(sus)
350 − Vdc
Collector Cut−off Current
(V
CE
= 200 V, I
B
= 0)
I
CEO
− 100
mAdc
Collector Cutoff Current
(V
CB
= 350 Vdc, I
E
= 0)
I
CBO
− 50
mAdc
Emitter Cutoff Current
(V
EB
= 5.0 Vdc, I
C
= 0)
I
EBO
− 5.0
mAdc
SECOND BREAKDOWN
Second Breakdown Collector with Base Forward Biased
(V
CE
= 50 Vdc, t = 1.0 s (non−repetitive)
(V
CE
= 100 Vdc, t = 1.0 s (non−repetitive)
I
S/b
4.5
1.0
−
−
Adc
ON CHARACTERISTICS
DC Current Gain
(I
C
= 100 mAdc, V
CE
= 5.0 Vdc)
(I
C
= 1.0 Adc, V
CE
= 5.0 Vdc)
(I
C
= 3.0 Adc, V
CE
= 5.0 Vdc)
(I
C
= 5.0 Adc, V
CE
= 5.0 Vdc)
(I
C
= 8.0 Adc, V
CE
= 5.0 Vdc)
(I
C
= 15 Adc, V
CE
= 5.0 Vdc)
h
FE
80
80
80
80
40
10
250
250
250
250
−
−
−
Collector−Emitter Saturation Voltage
(I
C
= 8.0 Adc, I
B
= 0.8 Adc)
V
CE(sat)
− 1.0
Vdc
Emitter−Base Saturation Voltage
(I
C
= 8.0 Adc, I
B
= 0.8 A)
V
BE(sat)
− 1.4
Vdc
Base−Emitter ON Voltage
(I
C
= 8.0 Adc, V
CE
= 5.0 Vdc)
V
BE(on)
− 1.5
Vdc
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(I
C
= 1.0 Adc, V
CE
= 5.0 Vdc, f
test
= 1.0 MHz)
f
T
35 −
MHz
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f
test
= 1.0 MHz)
C
ob
− 600
pF
Maximum Instantaneous Forward Voltage (Note 2)
(i
F
= 1.0 A, T
J
= 25°C)
(i
F
= 1.0 A, T
J
= 150°C)
v
F
1.1
0.93
V
Maximum Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, T
J
= 25°C)
(Rated dc Voltage, T
J
= 150°C)
i
R
10
100
mA
Maximum Reverse Recovery Time
(i
F
= 1.0 A, di/dt = 50 A/ms)
t
rr
100 ns
2. Diode Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%.
P1-P3P4-P6P7-P7

NJL4302DG

Mfr. #:
Buy NJL4302DG
Manufacturer:
ON Semiconductor
Description:
TRANS PNP 350V 15A TO-264
Lifecycle:
New from this manufacturer.
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