TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/518
Devices Qualified Level
2N3766 2N3767
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings Symbol 2N3766 2N3767 Units
Collector-Emitter Voltage
V
CEO
60 80 Vdc
Collector-Base Voltage
V
CBO
80 100 Vdc
Emitter-Base Voltage
V
EBO
6.0 Vdc
Base Current I
B
2.0 Adc
Collector Current
I
C
4.0 Adc
Total Power Dissipation @ T
C
= +25
0
C
(1)
P
T
25 W
Operating & Storage Temperature Range
T
op
,
T
stg
-65 to +200
0
C
THERMAL CHARACTERISTICS
Characteristics Symbol Max. Unit
Thermal Resistance, Junction-to-Case
R
θJC
7.0
0
C/W
1) Derate linearly 143 mW/
0
C between T
C
= +25
0
C and T
C
= +200
0
C
TO-66*
(TO-213AA)
*See Appendix A for
Package Outline
ELECTRICAL CHARACTERISTICS (T
C
= 25
0
C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 100 mAdc 2N3766
2N3767
V
(BR)
CEO
60
80
Vdc
Collector-Emitter Cutoff Current
V
CE
= 60 Vdc 2N3766
V
CE
= 80 Vdc 2N3767
I
CEO
500
500
µAdc
Collector-Emitter Cutoff Current
V
CE
= 80 Vdc, V
BE
= 1.5 Vdc 2N3766
V
CE
= 100 Vdc, V
BE
= 1.5 Vdc 2N3767
I
CEX
10
10
µAdc
Collector-Base Cutoff Current
V
CB
= 80 Vdc 2N3766
V
CB
= 100 Vdc 2N3767
I
CBO
10
10
µAdc
Emitter-Base Cutoff Current
V
EB
= 6.0 Vdc
I
EBO
500
µAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
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