BAT54-02V-V-G
www.vishay.com
Vishay Semiconductors
Rev. 1.2, 18-Nov-15
1
Document Number: 82394
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Small Signal Schottky Diode
MECHANICAL DATA
Case: SOD-523
Weight: approx. 1.4 mg
Molding compound flammability rating: UL94 V-0
Terminals: high temperature soldering guaranteed:
260 °C/4 x 10 s at terminals
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 3K/box
FEATURES
• This diode features very low turn-on voltage and
fast switching
• This device is protected by a PN junction guard
ring against excessive voltage, such as
electrostatic discharges
• Space saving SOD-523 package
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
PARTS TABLE
PART ORDERING CODE
INTERNAL
CONSTRUCTION
TYPE MARKING REMARKS
BAT54-02V-V-G BAT54-02V-V-G-18 or BAT54-02V-V-G-08 Single diode
.V Tape and reel
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Repetitive peak reverse voltage
= working peak reverse voltage
V
RRM
30 V
Forward continuous current I
F
200 mA
Repetitive peak forward current I
FRM
300 mA
Surge forward current I
FSM
600 mA
Power dissipation P
tot
150 mW
THERMAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Thermal resistance junction to ambient air R
thJA
680 K/W
Junction temperature T
j
125 °C
Storage temperature range T
stg
- 65 to + 150 °C
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Reverse breakdown voltage 100 μA pulses V
(BR)
30 V
Leakage current
Pulse test t
p
< 300 μs,
< 2 % at V
R
= 25 V
I
R
2μA
Forward voltage
I
F
= 0.1mA, t
p
< 300 μs, < 2 % V
F
240 mV
I
F
= 1 mA, t
p
< 300 μs, < 2 % V
F
320 mV
I
F
= 10 mA, t
p
< 300 μs, < 2 % V
F
400 mV
I
F
= 30 mA, t
p
< 300 μs, < 2 % V
F
500 mV
I
F
= 100 mA, t
p
< 300 μs, < 2 % V
F
800 mV
Diode capacitance V
R
= 1 V, f = 1 MHz C
D
10 pF
Reverse recovery time
I
F
= 10 mA, I
R
= 10 mA,
i
R
= 1 mA, R
L
= 100
t
rr
5ns
