Electrical Characteristics (T
A
= 25
O
C unless otherwise noted )
Symbol Parameter Conditions Min Typ Max Units
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown Voltage V
GS
= 0 V, I
D
= 250 µA 30 V
∆BV
DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
I
D
= 250 µA, Referenced to 25
o
C
20
mV /
o
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 24 V, V
GS
= 0 V
1 µA
T
J
= 55°C
10 µA
I
GSS
Gate - Body Leakage Current V
GS
= 20 V, V
DS
= 0 V 100 nA
I
GSS
Gate - Body Leakage, Reverse
V
GS
= -20 V, V
DS
= 0 V
-100 nA
ON CHARACTERISTICS (Note 2)
∆V
GS(th)
/∆T
J
Gate Threshold Voltage Temp.Coefficient I
D
= 250 µA, Referenced to 25
o
C -6 mV /
o
C
V
GS(th)
Gate Threshold Voltage V
DS
= V
GS
, I
D
= 250 µA 1 1.4 3 V
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= 10 V, I
D
= 11A
0.0075 0.009
Ω
T
J
=125°C 0.0125 0.016
V
GS
= 4.5 V, I
D
= 9 A
0.01 0.013
I
D(ON)
On-State Drain Current V
GS
= 10 V, V
DS
= 5 V 30 A
g
FS
Forward Transconductance
V
DS
= 10 V, I
D
= 11 A
25 S
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance V
DS
= 15 V, V
GS
= 0 V,
f = 1.0 MHz
2560 pF
C
oss
Output Capacitance 560 pF
C
rss
Reverse Transfer Capacitance 280 pF
SWITCHING CHARACTERISTICS (Note 2)
t
D(on)
Turn - On Delay Time
V
DD
= 10 V, I
D
= 1 A,
V
GS
= 10V, R
GEN
= 1 Ω
11 20 ns
t
r
Turn - On Rise Time 15 27 ns
t
D(off)
Turn - Off Delay Time 25 40 ns
t
f
Turn - Off Fall Time 21 34 ns
Q
g
Total Gate Charge
V
DS
= 15 V, I
D
= 9.3 A,
V
GS
= 5 V
23 33 nC
Q
gs
Gate-Source Charge 7 nC
Q
gd
Gate-Drain Charge 11 nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
Maximum Continuous Drain-Source Diode Forward Current 1.5 A
V
SD
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 1.5 A (Note 2)
0.7 1.2 V
Notes:
1. R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
θ
JC
is guaranteed by design
while R
θ
CA
is determined by the user's board design. R
θ
JA
shown below for single device operation on FR-4 board in still air.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
FDR4420 Rev.D
b. 125
O
C/W on a 0.026 in
2
of pad
of 2oz copper.
a. 70
O
C/W on a 1 in
2
pad of 2oz
copper.
c. 135
O
C/W on a 0.005 in
2
of pad
of 2oz copper.
