PDTA124X_SER_8 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 08 — 3 September 2009 4 of 12
NXP Semiconductors
PDTA124X series
PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = 47 kΩ
5. Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Reflow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 PCB with 60 µm copper strip line, standard footprint.
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
collector-base voltage open emitter - −50 V
V
CEO
collector-emitter voltage open base - −50 V
V
EBO
emitter-base voltage open collector - −7V
V
I
input voltage
positive - +7 V
negative - −40 V
I
O
output current (DC) - −100 mA
I
CM
peak collector current - −100 mA
P
tot
total power dissipation T
amb
≤ 25 °C
SOT416
[1]
- 150 mW
SOT490
[1][2]
- 250 mW
SOT346
[1]
- 250 mW
SOT883
[2][3]
- 250 mW
SOT54
[1]
- 500 mW
SOT23
[1]
- 250 mW
SOT323
[1]
- 200 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature - 150 °C
T
amb
ambient temperature −65 +150 °C
