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BC846BM3T5G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2014
January, 2014 − Rev. 3
1 Publication Order Number:
BC846BM3/D
BC846BM3T5G,
NSVBC846BM3T5G
General Purpose Transistor
NPN Silicon
• Moisture Sensitivity Level: 1
• ESD Rating: Human Body Model: >4000 V
Machine Model: >400 V
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• This is a Pb−Free Device
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage V
CEO
65 Vdc
Collector−Base Voltage V
CBO
80 Vdc
Emitter−Base Voltage V
EBO
6.0 Vdc
Collector Current − Continuous I
C
100 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR− 5 Board
(Note 1)
T
A
= 25°C
Derate above 25°C
P
D
265
2.1
mW
mW/°C
Thermal Resistance,
Junction to Ambient (Note 1)
R
q
JA
470 °C/W
Total Device Dissipation
Alumina Substrate (Note 2)
T
A
= 25°C
Derate above 25°C
P
D
640
5.1
mW
mW/°C
Thermal Resistance,
Junction to Ambient (Note 2)
R
q
JA
195 °C/W
Junction and Storage
Temperature Range
T
J
, T
stg
−55 to
+150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
Device Package Shipping
†
ORDERING INFORMATION
SOT−723
CASE 631AA
STYLE 1
MARKING
DIAGRAM
COLLECTOR
3
1
BASE
2
EMITTER
BC846BM3T5G SOT−723
(Pb−Free)
8000 / Tape &
Reel
http://onsemi.com
1B = Specific Device Code
M = Date Code
1B M
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
3
2
1
NSVBC846BM3T5G SOT−723
(Pb−Free)
8000 / Tape &
Reel
BC846BM3T5G, NSVBC846BM3T5G
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(I
C
= 10 mA)
V
(BR)CEO
65 − −
V
Collector− Emitter Breakdown Voltage
(I
C
= 10 mA, V
EB
= 0)
V
(BR)CES
80 − −
V
Collector− Base Breakdown Voltage
(I
C
= 10 mA)
V
(BR)CBO
80 − −
V
Emitter− Base Breakdown Voltage
(I
E
= 1.0 mA)
V
(BR)EBO
6.0 − −
V
Collector Cutoff Current (V
CB
= 30 V)
(V
CB
= 30 V, T
A
= 150°C)
I
CBO
−
−
−
−
15
5.0
nA
mA
ON CHARACTERISTICS
DC Current Gain
(I
C
= 10 mA, V
CE
= 5.0 V)
(I
C
= 2.0 mA, V
CE
= 5.0 V)
h
FE
−
200
150
290
−
450
−
Collector− Emitter Saturation Voltage (I
C
= 10 mA, I
B
= 0.5 mA)
Collector− Emitter Saturation Voltage (I
C
= 100 mA, I
B
= 5.0 mA)
V
CE(sat)
−
−
−
−
0.25
0.6
V
Base −Emitter Saturation Voltage (I
C
= 10 mA, I
B
= 0.5 mA)
Base −Emitter Saturation Voltage (I
C
= 100 mA, I
B
= 5.0 mA)
V
BE(sat)
−
−
0.7
0.9
−
−
V
Base −Emitter Voltage (I
C
= 1.0 mA, V
CE
= 5.0 V)
Base −Emitter Voltage (I
C
= 2.0 mA, V
CE
= 5.0 V)
Base −Emitter Voltage (I
C
= 10 mA, V
CE
= 5.0 V)
V
BE(on)
550
580
−
645
660
−
700
700
770
mV
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(I
C
= 10 mA, V
CE
= 5.0 Vdc, f = 100 MHz)
f
T
100 − −
MHz
Output Capacitance
(V
CB
= 10 V, f = 1.0 MHz)
C
obo
− − 4.5
pF
Noise Figure
(I
C
= 0.2 mA, V
CE
= 5.0 Vdc, R
S
= 2.0 kW, f = 1.0 kHz, BW = 200 Hz)
NF
− − 10
dB
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
BC846BM3T5G, NSVBC846BM3T5G
http://onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 1. DC Current Gain Figure 2. Collector−Emitter Saturation Voltage
I
C
, COLLECTOR CURRENT (mA) I
C
, COLLECTOR CURRENT (mA)
1,0001001010.1
10
100
1,000
1001010.1
0
0.1
0.2
0.3
0.4
Figure 3. Base−Emitter Saturation Voltage Figure 4. Base−Emitter “On” Voltage
I
C
, COLLECTOR CURRENT (mA) I
C
, COLLECTOR CURRENT (mA)
1,0001001010.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1,0001001010.1
0
0.4
0.2
0.8
1.0
1.2
Figure 5. Base−Emitter Temperature
Coefficient
Figure 6. Collector Saturation Region
I
C
, COLLECTOR CURRENT (mA) I
B
, BASE CURRENT (mA)
1,0001001010.1
−3.0
−2.6
−2.2
−1.8
−1.4
−1.0
−0.6
−0.2
1001010.10.01
0
0.4
0.8
1.2
1.6
2.0
h
FE
, DC CURRENT
V
CE(sat)
, COLL−EMIT SATURATION
VOLTAGE (V)
V
BE(sat)
, BASE−EMIT SATURATION
VOLTAGE (V)
V
BE(on)
, BASE−EMITTER ON VOLTAGE (V)
q
VB
, TEMPERATURE COEFFICIENT (mV)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
CE
= 5 V
150°C
25°C
−55°C
150°C
25°C
−55°C
IC/IB = 20
IC/IB = 20
150°C
25°C
−55°C
0.6
V
CE
= 5 V
150°C
25°C
−55°C
V
CE
= 5 V
−55°C to 150°C
q
VB
, for V
BE
T
A
= 25°C
I
C
= 200 mA100 mA50 mA20 mA10 mA
P1-P3P4-P5

BC846BM3T5G

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Buy BC846BM3T5G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 100mA 80V NPN
Lifecycle:
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