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MURH10020

P1-P2
V
RRM
= 50 V - 600 V
I
F
= 100 A
Features
• High Surge Capability D-67 Package
• Types up to 600 V V
RRM
Parameter Symbol MURH10005 (R) MURH10010 (R) Unit
Re
p
etitive
p
eak reverse
V
50
100
V
MURH10005 thru MURH10020R
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Conditions MURH10020 (R)
200
Silicon Super Fast
Recover
y
Diode
pp
voltage
V
RRM
50
100
V
RMS reverse voltage
V
RMS
35 70 V
DC blocking voltage
V
DC
50 100 V
Continuous forward current
I
F
100 100 A
Operating temperature
T
j
-65 to 175 -65 to 175 °C
Storage temperature
T
stg
-65 to 175 -65 to 175 °C
Parameter Symbol MURH10005 (R) MURH10010 (R) Unit
Diode forward voltage 1.3 1.3
25 25 μA
11 mA
Recovery Time
Maximum reverse recovery
time
T
RR
75 75 nS
I
F
=0.5 A, I
R
=1.0 A,
I
RR
= 0.25 A
V
R
= 50 V, T
j
= 125 °C
V
75
1
V
R
= 50 V, T
j
= 25 °C
I
F
= 100 A, T
j
= 25 °C
T
C
≤ 140 °C
Conditions
800 800
T
C
= 25 °C, t
p
= 8.3 ms
200
140
200
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Surge non-repetitive forward
current, Half Sine Wave
I
F,SM
Reverse current
I
R
V
F
A
100
800
MURH10020 (R)
-65 to 175
-65 to 175
1.3
25
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1
MURH10005 thru MURH10020R
www.genesicsemi.com
2
P1-P2

MURH10020

Mfr. #:
Buy MURH10020
Manufacturer:
GeneSiC Semiconductor
Description:
Rectifiers SI S-FST RECOV D-67 50-600V100A200P/141R
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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