Feb. 2009
2
MITSUBISHI IGBT MODULES
CM150E3U-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified)
VGE = 0V
V
CE = 0V
T
C = 25°C
Pulse (Note 1)
T
C = 25°C
Pulse (Note 1)
T
C = 25°C
—
—
Charged part to base plate, f = 60Hz, AC 1 minute
Main terminals M5 screw
Mounting M6 screw
Typical value
600
±20
150
300
150
300
600
–40 ~ +150
–40 ~ +125
2500
2.5 ~ 3.5
3.5 ~ 4.5
310
V
V
A
A
A
A
W
°C
°C
Vrms
N·m
N·m
g
Collector-emitter voltage
Gate-emitter voltage
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
Collector current
Emitter current
Symbol Item Conditions UnitRatings
V
V
VCE = VCES, VGE = 0V
±V
GE = VGES, VCE = 0V
T
j = 25°C
T
j = 125°C
V
CC = 300V, IC = 150A, VGE = 15V
V
CC = 300V, IC = 150A
V
GE = ±15V
R
G = 4.2Ω
Resistive load
I
E = 150A, VGE = 0V
I
E = 150A
die / dt = –300A / µs
Junction to case, IGBT part
Junction to case, FWDi part
I
F = 150A, Clamp diode part
I
F = 150A
die / dt = –300A / µs, Clamp diode part
Junction to case, Clamp diode part
Case to heat sink, conductive grease applied
(Per 1/2 module) (Note 6)
I
C = 15mA, VCE = 10V
I
C = 150A, VGE = 15V (Note 4)
V
CE = 10V
V
GE = 0V
1
0.5
3.0
—
13.2
7.2
2
—
100
350
300
300
2.6
160
—
0.21
0.47
2.6
160
—
0.47
—
mA
µA
nF
nF
nF
nC
ns
ns
ns
ns
V
ns
µC
K/W
K/W
V
ns
µC
K/W
K/W
—
—
2.4
2.7
—
—
—
300
—
—
—
—
—
—
0.36
—
—
—
—
0.36
—
0.07
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6
4.5 7.5
Collector cutoff current
Gate-emitter
threshold voltage
Gate-leakage current
Collector-emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Emitter-collector voltage
Reverse recovery time
Reverse recovery charge
Forward voltage
Reverse recovery time
Reverse recovery charge
Thermal resistance (Note 5)
Contact thermal resistance
Min Typ Max
I
CES
IGES
Cies
Coes
Cres
QG
td (on)
tr
td (off)
tf
VEC
(Note 2)
trr
(Note 2)
Qrr
(Note 2)
Rth(j-c)Q
Rth(j-c)R
VFM
trr
Qrr
Rth(j-c)
Rth(c-f)
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
Symbol
Item Test Conditions
V
GE(th)
VCE(sat)
Limits
Unit
Thermal resistance (Note 5)
V
CES
VGES
IC
ICM
IE
(Note 2)
IEM
(Note 2)
PC
(Note 3)
Tj
Tstg
Viso
—
—
Note 1. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating.
2. I
E, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode.
3. Junction temperature (T
j) should not increase beyond 150°C.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
5. Case temperature (T
C) measured point is shown in page OUTLINE DRAWING.
6. Typical value is measured by using thermally conductive grease of
λ
= 0.9[W/(m • K)].
