OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

AOTF4126

P1-P3P4-P6P7-P7
AOTF4126
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
2
4
6
8
10
0 5 10 15 20 25 30
V
GS
(Volts)
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
0
500
1000
1500
2000
2500
0 20 40 60 80 100
Capacitance (pF)
V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
iss
400
600
800
1000
Power (W)
C
oss
C
rss
V
DS
=50V
I
D
=20A
T
J(Max)
=175°C
T
C
=25°C
10
µ
s
1.0
10.0
100.0
I
D
(Amps)
10
µ
s
10
ms
1
ms
DC
R
DS(ON)
limited
100
µ
s
10
0
18
40
0
200
0.0001 0.001 0.01 0.1 1
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10
Z
θ
θ
θ
θJC
Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Single Pulse
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.0
0.1
0.01 0.1 1 10 100
V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
T
J(Max)
=175°C
T
C
=25°C
R
θJC
=3.5°C/W
Rev 1 : May 2012 www.aosmd.com Page 4 of 7
AOTF4126
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
10
100
0.000001 0.00001 0.0001 0.001
I
AR
(A) Peak Avalanche Current
Time in avalanche, t
A
(s)
Figure 12: Single Pulse Avalanche capability (Note
C)
0
10
20
30
40
50
0 25 50 75 100 125 150 175
Power Dissipation (W)
T
CASE
(°
°°
°C)
Figure 13: Power De-rating (Note F)
10
15
20
25
30
Current rating I
D
(A)
T
A
=25°C
10
100
1000
Power (W)
T
A
=25°C
T
A
=150°C
T
A
=100°C
T
A
=125°C
10
0
18
40
0.001
0.01
0.1
1
10
0.0001 0.001 0.01 0.1 1 10 100
Z
θ
θ
θ
θJA
Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0
5
10
0 25 50 75 100 125 150 175
Current rating I
T
CASE
(°
°°
°C)
Figure 14: Current De-rating (Note F)
1
10
0.001 0.1 10 1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
R
θJA
=58°C/W
Rev 1 : May 2012 www.aosmd.com Page 5 of 7
AOTF4126
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
3
6
9
12
15
50
100
150
200
250
300
0 5 10 15 20 25 30
I
rm
(A)
Q
rr
(nC)
I
S
(A)
Figure 17: Diode Reverse Recovery Charge and Peak
Current vs. Conduction Current
di/dt=800A/µs
125ºC
125ºC
25
ºC
25ºC
Q
rr
I
rm
6
10
14
18
22
26
30
60
90
120
150
I
rm
(A)
Q
rr
(nC)
125ºC
125ºC
25ºC
I
s
=20A
Q
rr
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
0
4
8
12
16
20
24
0 5 10 15 20 25 30
S
t
rr
(ns)
I
S
(A)
Figure 18: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
di/dt=800A/µs
125ºC
125
ºC
25
ºC
25
ºC
t
rr
S
1
1.5
2
2.5
3
12
18
24
30
S
t
rr
(ns)
125ºC
25ºC
I
s
=20A
t
rr
-2
2
6
0
30
0 200 400 600 800 1000
di/dt (A/µ
µµ
µs)
Figure 19: Diode Reverse Recovery Charge and Peak
Current vs. di/dt
25ºC
I
rm
0
0.5
0
6
0 200 400 600 800 1000
di/dt (A/µ
µµ
µs)
Figure 20: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
25ºC
125
ºC
S
Rev 1 : May 2012 www.aosmd.com Page 6 of 7
P1-P3P4-P6P7-P7

AOTF4126

Mfr. #:
Buy AOTF4126
Manufacturer:
Description:
MOSFET N-CH 100V 6A TO220F
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet