74ABT16374BDL,118

Philips Semiconductors Product data
74ABT16374B
16-bit D-type flip-flop; positive-edge trigger
(3-State)
2004 Mar 08
4
LOGIC SYMBOL
32
1Q0 1Q1 1Q2
65
1Q3
47 46 44 43
1D0 1D1 1D2 1D3
48
1
98
1Q4 1Q5 1Q6
1211
1Q7
41 40 38 37
1D4 1D5 1D6 1D7
1CP
1OE
1413 1716
36 35 33 32
25
24
2019 2322
30 29 27 26
2Q0 2Q1 2Q2 2Q3
2D0 2D21 2D2 2D3
2Q4 2Q5 2Q6 2Q7
2D4 2D5 2D6 2D7
2CP
2OE
SH00078
LOGIC SYMBOL (IEEE/IEC)
1EN
1
C1
2EN
C2
1D
2
2D
SH00077
1
48
24
25
47
46
44
43
41
40
38
37
36
35
33
32
30
29
2
3
5
6
8
9
11
12
13
14
16
17
19
20
22
2326
27
1OE
1CP
2OE
2CP
1D0
1D1
1D2
1D3
1D4
1D5
1D6
1D7
2D0
2D1
2D2
2D3
2D4
2D5
2D6
2D7
1Q0
1Q1
1Q2
1Q3
1Q4
1Q5
1Q6
1Q7
2Q0
2Q1
2Q2
2Q3
2Q4
2Q5
2Q6
2Q7
LOGIC DIAGRAM
CP Q
D
nD0
nQ0
CP Q
D
nD1
CP Q
D
nD2
CP Q
D
nD3
CP Q
D
nD4
CP Q
D
nD5
CP Q
D
nD6
CP Q
D
nD7
nQ1 nQ2 nQ3 nQ4 nQ5 nQ6 nQ7
nCP
nOE
SA00327
FUNCTION TABLE
INPUTS
INTERNAL
OUTPUTS
OPERATING MODE
nOE nCP nDx
REGISTER
nQ0 – nQ7
OPERATING
MODE
L
L
l
h
L
H
L
H
Load and read register
L X NC NC Hold
H
H
X
nDx
NC
nDx
Z
Z
Disable outputs
H = HIGH voltage level
h = HiIGH voltage level one set-up time prior to the HIGH-to-LOW E transition
L = LOW voltage level
l = LOW voltage level one set-up time prior to the HIGH-to-LOW E transition
NC= No change
X = Don’t care
Z = High-impedance “off” state
= LOW-to-HIGH clock transition
= Not a LOW-to-HIGH clock transition
Philips Semiconductors Product data
74ABT16374B
16-bit D-type flip-flop; positive-edge trigger
(3-State)
2004 Mar 08
5
ABSOLUTE MAXIMUM RATINGS
1,
2
SYMBOL
PARAMETER CONDITIONS RATING UNIT
V
CC
DC supply voltage –0.5 to +7.0 V
I
IK
DC input diode current V
I
< 0 V –18 mA
V
I
DC input voltage
3
–1.2 to +7.0 V
I
OK
DC output diode current V
O
< 0 V –50 mA
V
OUT
DC output voltage
3
output in Off or HIGH state –0.5 to +5.5 V
I
O
DC out
p
ut current
output in LOW state 128 mA
I
OUT
DC
o
u
tp
u
t
c
u
rrent
output in HIGH state –64 mA
T
stg
Storage temperature range –65 to 150 °C
NOTES:
1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability.
2. The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction
temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150 °C.
3. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
RECOMMENDED OPERATING CONDITIONS
SYMBOL
PARAMETER
LIMITS
UNIT
SYMBOL
PARAMETER
MIN MAX
UNIT
V
CC
DC supply voltage 4.5 5.5 V
V
I
Input voltage 0 V
CC
V
V
IH
HIGH-level input voltage 2.0 V
V
IL
LOW-level Input voltage 0.8 V
I
OH
HIGH-level output current –32 mA
I
OL
LOW-level output current 64 mA
t/v Input transition rise or fall rate 0 10 ns/V
T
amb
Operating free-air temperature range –40 +85 °C
Philips Semiconductors Product data
74ABT16374B
16-bit D-type flip-flop; positive-edge trigger
(3-State)
2004 Mar 08
6
DC ELECTRICAL CHARACTERISTICS
LIMITS
SYMBOL PARAMETER TEST CONDITIONS T
amb
= +25 °C
T
amb
= –40 °C
to +85 °C
UNIT
MIN TYP MAX MIN MAX
V
IK
Input clamp voltage V
CC
= 4.5 V; I
IK
= –18 mA –0.9 –1.2 –1.2 V
V
CC
= 4.5 V; I
OH
= –3 mA; V
I
= V
IL
or V
IH
2.5 2.9 2.5 V
V
OH
HIGH-level output voltage V
CC
= 5.0 V; I
OH
= –3 mA; V
I
= V
IL
or V
IH
3.0 3.4 3.0 V
V
CC
= 4.5 V; I
OH
= –32 mA; V
I
= V
IL
or V
IH
2.0 2.4 2.0 V
V
OL
LOW-level output voltage V
CC
= 4.5 V; I
OL
= 64 mA; V
I
= V
IL
or V
IH
0.42 0.55 0.55 V
V
RST
Power-up output voltage
3
V
CC
= 5.5 V; I
O
= 1 mA; V
I
= GND or V
CC
0.13 0.55 0.55 V
I
I
Input leakage current V
CC
= 5.5 V; V
I
= V
CC
or GND 0.01 ±1 ±1 µA
I
OFF
Power-off leakage current V
CC
= 0.0 V; V
O
or V
I
4.5 V ±5.0 ±100 ±100 µA
I
PU/PD
Power-up/down 3-State
output current
4
V
CC
= 2.1 V; V
O
= 0.5 V;
V
I
= GND or V
CC
; V
OE
= GND
±5.0 ±50 ±50 µA
I
OZH
3-State output HIGH current V
CC
= 5.5 V; V
O
= 2.7 V; V
I
= V
IL
or V
IH
0.5 10 10 µA
I
OZL
3-State output LOW current V
CC
= 5.5 V; V
O
= 0.5 V; V
I
= V
IL
or V
IH
–0.5 –10 –10 µA
I
CEX
Output HIGH leakage
current
V
CC
= 5.5 V; V
O
= 5.5 V; V
I
= GND or V
CC
5.0 50 50 µA
I
O
Output current
1
V
CC
= 5.5 V; V
O
= 2.5 V –50 –70 –180 –50 –180 mA
I
CCH
V
CC
= 5.5 V; Outputs HIGH;
V
I
= GND or V
CC
0.5 2 2 mA
I
CCL
Quiescent supply current
V
CC
= 5.5 V; Outputs LOW;
V
I
= GND or V
CC
8 19 19 mA
I
CCZ
V
CC
= 5.5 V; Outputs 3-State;
V
I
= GND or V
CC
0.5 2 2 mA
I
CC
Additional supply current
per input pin
2
V
CC
= 5.5 V; one input at 3.4 V,
other inputs at V
CC
or GND
5 100 100 µA
NOTES:
1. Not more than one output should be tested at a time, and the duration of the test should not exceed one second.
2. This is the increase in supply current for each input at 3.4 V.
3. For valid test results, data must not be loaded into the flip-flops (or latches) after applying the power.
4. This parameter is valid for any V
CC
between 0 V and 2.1 V with a transition time of up to 10 msec. From V
CC
= 2.1 V to V
CC
= 5 V ± 10% a
transition time of up to 100 µsec is permitted.
5. Unused pins at V
CC
or GND.
AC CHARACTERISTICS
GND = 0 V, t
R
= t
F
= 2.5 ns, C
L
= 50 pF, R
L
= 500
LIMITS
SYMBOL PARAMETER WAVEFORM
T
amb
= +25 °C
V
CC
= +5.0 V
T
amb
= –40 to +85 °C
V
CC
= +5.0V ± 0.5 V
UNIT
MIN TYP MAX MIN MAX
f
MAX
Maximum clock frequency 1 180 260 MHz
t
PLH
t
PHL
Propagation delay
nCP to nQx
1
1.7
1.4
2.6
2.2
4.0
3.4
1.7
1.4
4.7
3.9
ns
t
PZH
t
PZL
Output enable time
to HIGH and LOW level
3
4
1.3
1.3
2.4
2.3
3.7
3.4
1.3
1.3
4.7
4.6
ns
t
PHZ
t
PLZ
Output disable time
from HIGH and LOW level
3
4
1.9
1.7
3.1
2.6
4.6
4.0
1.9
1.7
5.5
4.4
ns

74ABT16374BDL,118

Mfr. #:
Manufacturer:
NXP Semiconductors
Description:
IC FF D-TYPE DUAL 8BIT 48SSOP
Lifecycle:
New from this manufacturer.
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