ITA6V5C1RL

MONOLITHICTRANSIL® ARRAY FOR DATA LINE PROTECTION
IN ACCORDANCE WITH :
- ESD standard :
. IEC 801-2 15kV 5ns / 50ns
. IEC 801-4 40A 5ns / 50ns
. IEC 801-5 1kV 1.2 / 50μs
25A 8 / 20μs
. MIL STD 883C - Method3015-2
V
P
= 25kV
C = 150pF
R = 150Ω
5 s duration
- Human body test :
V
P
=4kV
C = 150pF
R = 150Ω
FEATURES
HIGH SURGE CAPABILITY TRANSIL ARRAY
I
PP
= 40 A 8/20μs
UP TO 5 BIDIRECTIONAL TRANSIL FUNC-
TIONS
BREAKDOWNVOLTAGEAND MAXIMUMDIF-
FERENTIAL VOLTAGE BETWEEN TWO
INPUT PINS :
ITA6V5 = 6.5 V
ITA10 = 10 V
ITA18 = 18 V
ITA25 = 25 V
LOW CLAMPINGFACTOR(V
CL
/V
BR
) AT HIGH
CURRENT LEVEL
LOW LEAKAGECURRENT
LOW INPUT CAPACITANCE
SO8
FUNCTIONAL DIAGRAM
DESCRIPTION
Thisis aspecifictransil arrayfor RS232, RS423 in-
terface protection developed in monolithic chip
form in order to provide a high surge capabilityand
a low clamping voltage
EQUIVALENT TO4 BIDIRECTIONAL TRANSILS
5 GND
6
7
8
GND
April 1998 - E d: 3
I/04 4
I/03 3
I/02 2
I/01 1
ITA6V5C1 / ITA10C1
ITA18C1 / ITA25C1
1/5
Symbol Parameter Value Unit
I
PP
Peak pulsecurrent for 8/20 μsexponential
pulse
Seenote 40 A
I
2
tWireI
2
t value Seenote 0.6 A
2
s
T
stg
T
j
Storageand JunctionTemperature Range - 55 to + 150
125
°C
°C
ABSOLUTE RATINGS (limiting values) (0°C Tamb70°C)
Note :
For surgesgreater than the maximum value specified, the
input/output will present first a short circuit to the common
bus line and after an open circuit causedby the wire.
V
CL
V
BR
V
RM
I
R
I
RM
I
PP
I
V
Symbol Parameter
I
RM
LeakageCurrent @ V
RM
V
RM
Stand-offVoltage
V
BR
BreakdownVoltage
V
CL
Clamping Voltage
I
PP
SurgeCurrent
C Input Capacitance
ELECTRICAL CHARACTERISTICS
Types
I
RM
@V
RM
V
BR
@I
R
V
CL
@I
PP
V
CL
I
PP
C1 C2
α
T
max min 8/20
μ
s max 8/20
μ
s max max max
Note 1 Note 1 Note 1 Note 2 Note 3
μA V V mA V A V A pF pF 10
-4
/°C
ITA6V5C1 10 5 6.5 1 10 10 12 25 750 550 4
ITA10C1 10 8 10 1 15 10 19 25 570 260 8
ITA18C1 4 15 18 1 25 10 28 25 350 180 9
ITA25C1 4 24 25 1 33 10 38 25 300 100 12
All parameterstested at 25°C, except where indicated.
Note 1: BetweenI/O pin and ground.
Note 2: Betweentwo input Pins at 0 VBias.
Note 3:
Betweentwo input Pins at V
RM
.
100
50
0
20 s
t
%I
pp
8s
Pulse wave form 8/20 s
ITA6V5C1/ ITA10C1 / ITA18C1 / ITA25C1
2/5
Note :
The curve of the figure 2 is specified for a junction temperature of 25
°
C before surge.
P(W)
1E-03 1E-02 1E-01 1E+00 1E+01 1E+02
1E+01
1E+02
1E+03
1E+04
ITA25C1
ITA18C1
ITA10C1
ITA6V5C1
Tinitial=25C
j
o
t(ms)expo
P
P
Fig.1:
Typical Peak pulse power versus exponen-
tial pulse duration.
I(A)
1E-02 1E-01 1E+00 1E+01
1E+00
1E+01
1E+02
1E+03
DC
exponential waveform
t(ms)
Fig.3: PeakcurrentI
DC
inducingopencircuitof the
wire for one input/output versus pulse duration
(typical values).
C(pF)
1E+00 1E+01 1E+02
1E+02
1E+03
T=25C
f=1MHz
j
o
V (V)
R
ITA18C1
ITA25C1
ITA10C1
ITA6V5C1
Fig.4 : Junction capacitance versus reverse ap-
pliedvoltage for one input/output(typical values).
V (V)
1E-01 1E+00 1E+01 1E+02
1E+00
1E+01
1E+02
1E+03
CL
I(A)
PP
T initial = 25 C
j
o
PP
%I
t
tt
r
t=8 s
r
100
50
0
ITA25C1
ITA18C1
ITA10C1
ITA6V5C1
Fig.2 :
Clamping voltage versus peak pulse cur-
rent exponentialwaveform 8/20 μs.
ITA6V5C1 / ITA10C1 / ITA18C1 / ITA25C1
3/5

ITA6V5C1RL

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
ESD Suppressors / TVS Diodes PROTECTION
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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