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RSS130N03FU6TB

P1-P3P4-P4
RSS130N03
Transistors
1/3
Switching (30V, 13A)
RSS130N03
zFeatures
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small and Surface Mount Package (SOP8).
zApplication
Power switching, DC/DC converter.
zStructure
Silicon N-channel
MOS FET
zExternal dimensions (Unit : mm)
Each lead has same dimensions
SOP8
5.0±0.2
0.2±0.1
6.0±0.3
3.9±0.15
0.5±0.1
(
1
)
(
4
)
(
8
)
(
5
)
Max.1.75
1.27
0.15
0.4±0.1
1.5±0.1
0.1
zAbsolute maximum ratings (Ta = 25°C)
30
20
±13
±52
1.6
6.4
2
150
−55 to +150
V
DSS
V
GSS
P
D
Tch
V
V
A
W
°C
I
D
I
DP
A
I
s
I
sp
A
A
Tstg
°C
Symbol Limits
Unit
Parameter
Drain-Source Voltage
Storage Temperature
Channel Temperature
Total Power Dissipation
Source Current
(Body Diode)
Drain Current
Gate-Source Voltage
Pulsed
Continuous
Pulsed
Continuous
∗1 Pw≤10µs, Duty cycle≤1%
∗
2 Mounted on a ceramic board.
∗1
∗1
∗2
zEquivalent circuit
∗
A protection diode is included between the gate
and the source terminals to protect the diode
against static electricity when the product is in
use.Use a protection circuit when the fixed
voltage are exceeded.
(1)
Source
(2)
Source
(3)
Source
(4)
Gate
(5)
Drain
(6)
Drain
(7)
Drain
(8)
Drain
(1) (2) (3)
(8) (7) (6) (5)
(1) (2) (3) (4)
(4)
∗
2
∗2 Body
Diode.
(8) (7) (6) (5)
∗
1
∗1 ESD Protection Diode.
zThermal resistance (Ta = 25°C)
Rth (ch-a) 62.5
°C
/ W
Symbol Limits Unit
Parameter
Channel to Ambient
∗ Mounted on a ceramic board.
∗
RSS130N03
Transistors
2/3
zElectrical characteristics (Ta = 25°C)
µA
pF
mΩ
S
V
µA
V
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
GS
=0V
f=1MHz
V
DS
=10V
V
GS
=10V
I
D
=6.5A, V
DD
15V
R
L
=2.31Ω
R
GS
=10Ω
V
DD
=15V
I
D
=13A, V
GS
=10V
I
D
=13A, V
GS
=4.5V
I
D
=13A, V
GS
=4V
I
D
=13A, V
DS
=10V
I
D
=1mA, V
GS
=0V
V
GS
=20V, V
DS
=0V
V
DS
=30V, V
GS
=0V
V
DS
=10V, I
D
=1mA
Parameter Test Conditions
UnitMin. Typ.
I
GSS
I
DSS
l Y
fs
l
C
iss
Symbol
C
oss
C
rss
t
r
t
f
Q
gd
Q
gs
Q
g
V
(BR)DSS
V
GS
(th)
R
DS
(on)
∗
∗
∗
∗
∗
∗
∗
∗
∗
t
d
(on)
t
d
(off)
∗Pulsed
Static Drain-Source On-State
Resistance
Gate-Drain Charge
Gate-Source Charge
Total Gate Charge
Fall Time
Turn-Off Delay Time
Rise Time
Turn-On Delay Time
Reverse Transfer Capacitance
Output Capacitance
Input Capacitance
Forward Transfer Admittance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Drain-Source Breakdown Voltage
Gate-Source Leakage
−−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
30
5.9
7.4
7.9
2000
605
320
13
30
88
55
25
4.7
9.4
1.0
11
V
GS
=5V
I
D
=13A
Max.
−
−
−
−
−
−
−
−
−
−
−
8.1
10.3
11.0
10
1
2.5
35
zBody diode characteristics (Source-Drain Characteristics) (Ta = 25°C)
Parameter Test Conditions
V
Unit
−−
Min. Typ.
1.2
Max.
I
s
=6.4A, V
GS
=0V
V
SD
Symbol
∗Pulsed
Forward Voltage
∗
RSS130N03
Transistors
3/3
zElectrical characteristic curves
10000
1000
100
10
0.1 1 10
100
Fig.1 Typical Capacitance
vs. Drain-Source Voltage
CAPACITANCE : C
(pF)
DRAIN-SOURCE VOLTAGE : V
DS
(V)
C
iss
C
oss
C
rss
0.01
Ta=25°C
f=1MHz
V
GS
=0V
1
10
100
1000
0.1 1 10
SWITCHING TIME : t
(ns)
DRAIN CURRENT : I
D
(A)
Fig.2 Switching Characteristics
0.01 100
10000
tf
td(off)
td(on)
tr
Ta=25°C
V
DD
=15V
V
GS
=10V
R
G
=10Ω
Pulsed
15 20
4
3
2
1
0
510025
GATE-SOURCE VOLTAGE: V
GS
(V)
TOTAL GATE CHANGE: Qg (nC)
Fig.3 Dynamic Input Characteristics
Ta=25 C
V
DD
=15V
I
D
=13A
R
G
=10Ω
Pulsed
5
6
7
8
10
1
0.1
0.01
Fig.4 Typical Transfer Characteristics
DREIN CURRENT : I
D
(A)
0 0.5 1.0 1.5
GATE - SOURCE VOLTAGE : V
GS
(V)
V
DS
=10V
Pulsed
0.001
2.0 2.5 3.0
100
Ta=125°C
75°C
−25°C
25°C
0
50
100
4
2 8 10 12
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS(on)
(mΩ)
GATE-SOURCE VOLTAGE : V
GS
(V)
Fig.5 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
0
6
Ta=25 C
pulsed
I
D
=13A
I
D
=6.5A
0.1
1
100
10
0.50
1.0
1.5
Pulsed
V
GS
=0V
Ta=−25°C
25°C
75°C
125°C
0.01
SOURCE-DRAIN VOLTAGE : V
SD
(A)
Fig.6 Source-Current vs.
Source-Drain Voltage
SOURCE CURRENT : Is
(A)
100
0.1
10
1
1
DRAIN CURRENT : I
D
(A)
Fig.7 Static Drain-Source
On-State Resistance
vs. Drain Current (1)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS(on)
(mΩ)
10 100
Ta=125°C
75°C
−25°C
25°C
Pulsed
V
GS
=
10V
100
0.1
10
1
1
DRAIN CURRENT : I
D
(A)
Fig.7 Static Drain-Source
On-State Resistance
vs. Drain Current (2)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS(on)
(mΩ)
10 100
Ta=125°C
75°C
−25°C
25°C
Pulsed
V
GS
=4.5V
100
0.1
10
1
1
DRAIN CURRENT : I
D
(A)
Fig.7 Static Drain-Source
On-State Resistance
vs. Drain Current (3)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS(on)
(mΩ)
10 100
Ta=125°C
75°C
−25°C
25°C
Pulsed
V
GS
=
4V
P1-P3P4-P4

RSS130N03FU6TB

Mfr. #:
Buy RSS130N03FU6TB
Manufacturer:
ROHM Semiconductor
Description:
MOSFET 30V 13A N CHANNEL
Lifecycle:
New from this manufacturer.
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