Characteristics ACST2
4/13 Doc ID 13304 Rev 3
Figure 4. On-state rms current versus
ambient temperature
Figure 5. Relative variation of thermal
impedance versus pulse duration
TO-220FPAB
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0 25 50 75 100 125
I
T(RMS)
(A)
α=180 °
Printed circuit board FR4
Natural convection
S
CU
=0.5 cm²
T
amb
(°C)
0.01
0.10
1.00
1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03
K=[Z
th
/R
th
]
Z
th(j-a)
Z
th(j-c)
TO-220FPAB
t
P
(s)
Figure 6. Relative variation of thermal
impedance versus pulse duration
DPAK
Figure 7. Relative variation of gate trigger,
holding and latching current versus
junction temperature
1.0E-02
1.0E-01
1.0E+00
1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03
K=[Z
th
/R
th
]
Z
th(j-a)
Z
th(j-c)
DPAK
t
P
(s)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
-40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130
I
GT
,I
H
,I
L
[T
J
]/I
GT
,I
H
,I
L
[T
j
=25 °C]
I
GT
I
L
& I
H
T
j
(°C)
Typical values
Figure 8. Relative variation of static dV/dt
versus junction temperature
Figure 9. Relative variation of critical rate of
decrease of main current versus
reapplied dV/dt (typical values)
1
10
100
25 50 75 100 125
dV/dt [T
j
]/dV/dt[T
j
=125 °C]
V
OUT
=540 V
T
j
(°C)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0.1 1.0 10.0 100.0
(dI/dt)
c
[(dV/dt)
c
] / Specified (dI/dt)
c
V
OUT
=300 V
(dV/dt)
c
(V/µs)