RJH60A85RDPE-00#J3 Datasheet RJH60A85RDPE-00#J3 | P1-P3

R07DS0809EJ0200 Rev.2.00 Page 1 of 8

Jul 12, 2012

Preliminary Datasheet

RJH60A85RDPE

600V - 15A - IGBT

Application: Inverter

Features

 Reverse conducting IGBT with monolithic diode

 Short circuit withstand time (5 s typ.)

 Low collector to emitter saturation voltage

V

CE(sat)

= 1.5 V typ. (at I

C

= 15 A, V

GE

= 15 V, Ta = 25°C)

 Built-in fast recovery diode (t

rr

= 160 ns typ.) in one package

 Trench gate and thin wafer technology

 High speed switching

t

f

= 110 ns typ. (at V

CC

= 300 V, V

GE

= 15 V, I

C

= 15 A, Rg = 5 , Ta = 25°C, inductive load)

Outline

1. Gate

2. Collecto

r

3. Emitter

4. Collecto

r

RENESAS Package code:

PRSS0004AE-B

(Package name:

LDPAK (S)-(1) )

1

2

3

4

C

G

E

Absolute Maximum Ratings

(Ta = 25°C)

Item Symbol Ratings Unit

Collector to emitter voltage / diode reverse voltage V

CES

/ V

R

600 V

Gate to emitter voltage V

GES

±30 V

Tc = 25°C I

C

30 A Collector current

Tc = 100°C I

C

15 A

Collector peak current I

C(peak)

Note1

60 A

Collector to emitter diode forward current i

DF

15 A

Collector to emitter diode forward peak current i

DF(peak)

Note1

60 A

Collector dissipation P

C

Note2

113 W

Junction to case thermal resistance j-c

Note2

1.11 C/ W

Junction temperature Tj 150 C

Storage temperature Tstg –55 to +150 C

Notes: 1. PW  10 s, duty cycle  1%

2. Value at Tc = 25C

R07DS0809EJ0200

Rev.2.00

Jul 12, 2012

RJH60A85RDPE Preliminary

R07DS0809EJ0200 Rev.2.00 Page 2 of 8

Jul 12, 2012

Electrical Characteristics

(Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Collector to emitter breakdown

voltage

V

(BR)CES

600 — — V I

C

=10 A, V

GE

= 0

Zero gate voltage collector current

/ diode reverse current

I

CES

/ I

R

— — 1 A V

CE

= 600 V, V

GE

= 0 V

Gate to emitter leak current I

GES

— — ±100 nA V

GE

= ±30 V, V

CE

= 0 V

Gate to emitter cutoff voltage V

GE(off)

4.5 — 7.5 V V

CE

= 10 V, I

C

= 1 mA

V

CE(sat)

— 1.5 1.8 V I

C

= 15 A, V

GE

= 15 V

Note3

Collector to emitter saturation voltage

V

CE(sat)

— 1.9 — V I

C

= 30 A, V

GE

= 15 V

Note3

Input capacitance Cies — 880 — pF

Output capacitance Coes — 48 — pF

Reveres transfer capacitance Cres — 35 — pF

V

CE

= 25 V

V

GE

= 0 V

f = 1 MHz

Total gate charge Qg — 56 — nC

Gate to emitter charge Qge — 8.4 — nC

Gate to collector charge Qgc — 33 — nC

V

GE

= 15 V

V

CE

= 300 V

I

C

= 15 A

Turn-on delay time t

d(on)

— 40 — ns

Rise time t

r

— 17 — ns

Turn-off delay time t

d(off)

— 86 — ns

Fall time t

f

— 110 — ns

Turn-on energy E

on

— 0.43 — mJ

Turn-off energy E

off

— 0.30 — mJ

Total switching energy E

total

— 0.73 — mJ

V

CC

= 300V

V

GE

= 15 V

I

C

= 15 A

Rg = 5 

Inductive load

Short circuit withstand time t

sc

3.0 5.0 — s

V

CE

 360 V, V

GE

= 15 V

Tj=100C

FRD forward voltage V

F

— 1.7 — V I

F

= 15 A

Note3

FRD reverse recovery time t

rr

— 160 — ns

FRD reverse recovery charge Q

rr

— 0.47 — C

FRD peak reverse recovery current I

rr

— 7.5 — A

I

F

= 15 A

di

F

/dt = 100 A/s

Notes: 3. Pulse test.

RJH60A85RDPE Preliminary

R07DS0809EJ0200 Rev.2.00 Page 3 of 8

Jul 12, 2012

Main Characteristics

Typical Output Characteristics

60

50

40

30

20

10

1234

5

60

50

40

30

20

10

Tc = 25

°

C

Pulse Test

12 V

Collector Current I

C

(A)Collector Current I

C

(A)

Maximum Safe Operation Area

0

V

GE

= 10 V

Collector to Emitter Voltage V

CE

(V)

Collector to Emitter Voltage V

CE

(V)

Typical Output Characteristics

12345

Tc = 150

°

C

Pulse Test

Collector Current I

C

(A)

0

Collector to Emitter Voltage V

CE

(V)

Collector Current I

C

(A)

Collector to Emitter Voltage V

CE

(V)

Turn-off SOA

0 200 400 600 800

0

100

10

0.1

1

0.01

110010

1000

Collector Current I

C

(A)

Case Temperature Tc (°C)

Maximum DC Collector Current vs.

Case Temperature

0

02550 10075 125 150

17502550 10075 125 150 175

Collector Dissipation Pc (W)

Case Temperature Tc (°C)

Collector Dissipation vs.

Case Temperature

120

100

80

60

40

20

80

60

40

20

40

30

20

10

0

15 V

12 V

V

GE

= 10 V

15 V

18 V

Tc = 25°C

Single pulse

100 μs

PW = 10 μs

RJH60A85RDPE-00#J3

RJH60A85RDPE-00#J3

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