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TN2435N8-G

P1-P3P4-P5
● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com
TN2435
Features
Low threshold
High input impedance
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
Applications
Logic level interfaces - ideal for TTL and CMOS
Solid state relays
Battery operated systems
Photo voltaic drives
Analog switches
General purpose line drivers
Telecom switches
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General Description
This low threshold, enhancement-mode (normally-off)
transistor utilizes a vertical DMOS structure and Supertex’s
well-proven, silicon-gate manufacturing process. This
combination produces a device with the power handling
capabilities of bipolar transistors and the high input
impedance and positive temperature coefficient inherent
in MOS devices. Characteristic of all MOS structures, this
device is free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.
N-Channel Enhancement-Mode
Vertical DMOS FET
Absolute Maximum Ratings
Parameter Value
Drain-to-source voltage BV
DSS
Drain-to-gate voltage BV
DGS
Gate-to-source voltage ±20V
Operating and storage temperature -55
O
C to +150
O
C
Soldering temperature* 300
O
C
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
* Distance of 1.6mm from case for 10 seconds.
Ordering Information
Device
Package Option
BV
DSS
/BV
DGS
(V)
R
DS(ON)
(max)
(Ω)
I
D(ON)
(min)
(A)
TO-243AA (SOT-89)
TN2435 TN2435N8-G 350 6.0 1.0
-G indicates package is RoHS compliant (‘Green’)
Pin Configuration
TO-243AA (SOT-89) (N8)
Product Marking
TO-243AA (SOT-89) (N8)
TN4SW
W = Code for week sealed
= “Green” Packaging
GATE
SOURCE
DRAIN
DRAIN
Package may or may not include the following marks: Si or
2
TN2435
● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com
Electrical Characteristics (T
A
= 25
O
C unless otherwise specified)
Sym Parameter Min Typ Max Units Conditions
BV
DSS
Drain-to-source breakdown voltage 350 - - V V
GS
= 0V, I
D
= 250µA
V
GS(th)
Gate threshold voltage 0.8 - 2.5 V V
GS
= V
DS
, I
D
= 1.0mA
ΔV
GS(th)
Change in V
GS(th)
with temperature - - -5.5 mV/
O
C V
GS
= V
DS
, I
D
= 1.0mA
I
GSS
Gate body leakage - - 100 nA V
GS
= ± 20V, V
DS
= 0V
I
DSS
Zero gate voltage drain current
- - 10 µA V
GS
= 0V, V
DS
= Max Rating
- - 1.0 mA
V
DS
= 0.8Max Rating,
V
GS
= 0V, T
A
= 125°C
I
D(ON)
On-state drain current
0.5 - -
A
V
GS
= 4.5V, V
DS
= 25V
1.0 - - V
GS
= 10V, V
DS
= 25V
R
DS(ON)
Static drain-to-source on-state resistance
- - 15
Ω
V
GS
= 3.0V, I
D
= 150mA
- - 10 V
GS
= 4.5V, I
D
= 250mA
- - 6.0 V
GS
= 10V, I
D
= 750mA
ΔR
DS(ON)
Change in R
DS(ON)
with temperature - - 1.7 %/
O
C V
GS
= 10V, I
D
= 750mA
G
FS
Forward transductance 125 - - mmho V
DS
= 20V, I
D
= 350mA
C
ISS
Input capacitance - 125 200
pF
V
GS
= 0V,
V
DS
= 25V,
f = 1.0MHz
C
OSS
Common source output capacitance - 25 70
C
RSS
Reverse transfer capacitance - 8.0 25
t
d(ON)
Turn-on delay time - 5.0 20
ns
V
DD
= 25V,
I
D
= 750mA,
R
GEN
= 25Ω
t
r
Rise time - 10 20
t
d(OFF)
Turn-off delay time - 28 40
t
f
Fall time - 10 30
V
SD
Diode forward voltage drop - - 1.5 V V
GS
= 0V, I
SD
= 750mA
t
rr
Reverse recovery time - 300 - ns V
GS
= 0V, I
SD
= 750mA
Notes:
All D.C. parameters 100% tested at 25
O
C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
All A.C. parameters sample tested.
1.
2.
Notes:
† I
D
(continuous) is limited by max rated T
j
.
‡ Mounted on FR5 Board, 25mm x 25mm x 1.57mm.
Thermal Characteristics
Package
I
D
(continuous)
†
(mA)
I
D
(pulsed)
(A)
Power Dissipation
@T
A
= 25
O
C
(W)
θ
jc
(
O
C/W)
θ
ja
(
O
C/W)
I
DR
†
(mA)
I
DRM
(A)
TO-243AA (SOT-89) 365 1.8 1.6
‡
15 78
‡
365 1.8
Switching Waveforms and Test Circuit
90%
10%
90%
90%
10%
10%
PULSE
GENERATO
R
V
DD
R
L
OUTPUT
D.U.T
.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
10V
V
DD
R
GEN
0V
0V
3
TN2435
● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com
Typical Performance Curves
0.0 0.5 1.0 1.5 2.0
0.0
0.2
0.4
0.6
0.8
1.0
V
DS
=15V
T
A
=125
O
C
T
A
=25
O
C
T
A
=-55
O
C
0 25 50 75 100 125 150
0.0
0.5
1.0
1.5
2.0
I
D
(Amperes)
V
DS
(Volts)
VGS = 10V
Output Characteristics
6V
5V
4V
3V
2.5V
Saturation Characteristics
I
D
(Amperes)
V
DS
(Volts)
VGS = 10V
8V
6V
4V
3V
2.5V
G
FS
(siemens)
I
D
(Amperes)
Transconductance vs. Drain Current
Power Dissipation vs. Ambient Temperature
PD
(Watts)
T
A
(
O
C)
Maximum Rated Safe Operating Area
I
D
(amperes)
V
DS
(Volts)
Thermal Response Characteristics
Thermal Resistance (normalized)
t
p
(seconds)
8V
5V
1 100010010
10
1.0
0.1
0.01
0.001
TO-243AA (DC)
TO-243AA (pulsed)
1.0
0.8
0.6
0.4
0.2
0.001
100.01 0.1 1.0
TO-243AA
P
D
= 1.6W
T
C
= 25
O
C
0
0 10 20 30 40 50
0
1.0
2.0
3.0
2.5
1.5
0.5
0 2 4 6 8 1
0
0.0
0.4
0.8
1.2
1.6
2.0
TO-243AA
T
A
=25
O
C
P1-P3P4-P5

TN2435N8-G

Mfr. #:
Buy TN2435N8-G
Manufacturer:
Microchip Technology
Description:
MOSFET 350V 10Ohm
Lifecycle:
New from this manufacturer.
Delivery:
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