DMG4468LK3-13 Datasheet DMG4468LK3-13 | P1-P3

DMG4468LK3

Document number: DS31958 Rev. 3 - 2

1 of 6

www.diodes.com

June 2013

DMG4468LK3

NEW PRODUCT

N-CHANNEL ENHANCEMENT MODE MOSFET

Features

• Low On-Resistance

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: TO252

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals Connections: See Diagram

• Terminals: Matte Tin Finish annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Marking Information: See Page 5

• Ordering Information: See Page 5

• Weight: 0.33 grams (approximate)

Ordering Information (Note 4)

Part Number Case Packaging

DMG4468LK3-13 TO252 2500 / Tape & Reel

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.

Marking Information

TOP VIEW

PIN OUT -TOP VIEW

Equivalent Circuit

G S

Green

= Manufacturer’s Marking

N4468L = Product Type Marking Code

YYWW = Date Code Marking

YY = Year (ex: 13 = 2013)

WW = Week (01-52)

YYWW

N4468L

DMG4468LK3

Document number: DS31958 Rev. 3 - 2

2 of 6

www.diodes.com

June 2013

DMG4468LK3

NEW PRODUCT

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

DSS

30 V

Gate-Source Voltage

GSS

±20 V

Continuous Drain Current (Note 5)

Steady

State

= +25°C

= +85°C

9.7

6.3

Pulsed Drain Current (Note 6)

48 A

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation (Note 5)

1.68 W

Thermal Resistance, Junction to Ambient @T

= +25°C

• JA

74.3 °C/W

Operating and Storage Temperature Range

, T

STG

-55 to +150 °C

Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout.

6. Repetitive rating, pulse width limited by junction temperature.

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

DSS

30 - - V

= 0V, I

= 250µA

Zero Gate Voltage Drain Current T

= +25°C I

DSS

- - 1.0 µA

= 30V, V

= 0V

Gate-Source Leakage

GSS

- - ±100 nA

= ±20V, V

= 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

GS(th)

1.05 - 1.95 V

= V

, I

= 250µA

Static Drain-Source On-Resistance

DS (ON)

mΩ

= 10V, I

= 11.6A

= 4.5V, I

= 10A

Forward Transfer Admittance

- 8 - S

= 10V, I

= 9A

Diode Forward Voltage

- 0.73 1.0 V

= 0V, I

= 1A

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

iss

867

= 15V, V

= 0V,

f = 1.0MHz

Output Capacitance

oss

Reverse Transfer Capacitance

rss

Gate Resistance

1.39

Ω

= 0V, V

= 0V, f = 1MHz

Total Gate Charge

18.85

= 10V, V

= 15V,

= 11.6A

Gate-Source Charge

2.59

Gate-Drain Charge

6.15

Turn-On Delay Time

D(on)

5.46

= 15V, V

= 10V,

= 1.3Ω, R

= 3Ω

Turn-On Rise Time

14.53

Turn-Off Delay Time

D(off)

18.84

Turn-Off Fall Time

6.01

Notes: 7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.

DMG4468LK3

Document number: DS31958 Rev. 3 - 2

3 of 6

www.diodes.com

June 2013

DMG4468LK3

NEW PRODUCT

0 0.5 1 1.5 2

Fig.1 Typical Output Characteristics

V , DRAIN-SOURCE VOLTAGE (V)

I , DRAIN CURRENT (A)

V = 2.5V

V = 3.0V

V = 3.5V

V = 4.0V

V = 4.5V

V = 10V

0 0.5 1 1.5 2 2.5 3 3.5 4

V = 5.0V

Fig. 2 Typical Transfer Characteristics

V , GATE SOURCE VOLTAGE(V)

I , DRAIN CURRENT(A)

T = -55°C

T = 25°C

T = 85°C

T = 125°C

T = 150°C

0.004

0.008

0.012

0.016

0.020

0.024

0.028

0.032

0.036

0.040

0 5 10 15 20 25 30

Fig. 3 Typical On-Resistance

vs. Drain Current and Gate Voltage

I , DRAIN CURRENT (A)

R , DRAIN-SOURCE ON-RESISTANCE ( )

DS(on)

Ω

V = 10V

V = 4.5V

0.01

0.02

0.03

0.04

0.05

0 5 10 15

V = 4.5V

Fig. 4 Typical Drain-Source On-Resistance

vs. Drain Current and Temperature

I , DRAIN CURRENT (A)

R DRAIN SOURCE ON-RESISTANCE ( )

DS(on)

Ω

T = -55°C

T = 25°C

T = 85°C

T = 125°C

T = 150°C

0.5

0.7

0.9

1.1

1.3

1.5

1.7

-50 -25 0 25 50 75 100 125 150

Fig. 5 On-Resistance Variation with Temperature

T , JUNCTION TEMPERATURE ( C)

R , DRAIN-TO-SOURCE

RESISTANCE (NORMALIZED)

DS(ON)

V = 4.5A

I = 5A

V = 10A

I = 10A

0.01

0.02

0.03

0.04

0.05

-50 -25 0 25 50 75 100 125 150

Fig. 6 Typical Static Drain-Source On-State Resistance

vs. Ambient Temperature

T AMBIENT TEMPERATURE (°C)

R STATIC DRAIN SOURCE

ON-STATE RESISTANCE ( )

DS(ON)

Ω

V = 4.5A

I = 5A

V = 10A

I = 10A

P1-P3 P4-P6

DMG4468LK3-13

Mfr. #:

Buy DMG4468LK3-13

Manufacturer:

Diodes Incorporated

Description:

MOSFET ENHANCE MODE MOSFET N Chan 30V/6.3-9.7A

Lifecycle:

New from this manufacturer.

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DMG4468LK3-13