RN2314~RN2318
2014-03-01
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)
RN2314, RN2315, RN2316, RN2317, RN2318
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
z With built-in bias resistors
z Simplify circuit design
z Reduce a quantity of parts and manufacturing process
z Complementary to RN1314 to RN1318
Equivalent Circuit and Bias Resistor Values
Absolute Maximum Ratings
(Ta = 25
°
C)
Characteristic Symbol Rating Unit
Collector-base voltage V
CBO
−50 V
Collector-emitter voltage
RN2314 to 2318
V
CEO
−50 V
RN2314 −5
RN2315 −6
RN2316 −7
RN2317 −15
Emitter-base voltage
RN2318
V
EBO
−25
V
Collector current I
C
−100 mA
Collector power dissipation P
C
100 mW
Junction temperature T
j
150 °C
Storage temperature range
RN2314 to 2318
T
stg
−55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
JEDEC ―
JEITA SC-70
TOSHIBA 2-2E1A
Weight: 0.006g (typ.)
Type No. R
1
(kΩ) R
2
(kΩ)
RN2314 1
10
RN2315 2.2
10
RN2316 4.7
10
RN2317 10 4.7
RN2318 47 10
Unit: mm
Start of commercial production
1999-01
