Expand menu
Hello, Sign in
My Account
0
Cart
Home
Products
Sensors
Semiconductors
Passive Components
Connectors
Power
Electromechanical
Optoelectronics
Circuit Protection
Integrated Circuits - ICs
Main Products
Manufacturers
Blog
Services
About OMO
About Us
Contact Us
Check Stock
MUBW50-12T8
P1-P3
P4-P6
P7-P7
© 2006 IXYS All rights reser
ved
4 - 7
0646
MUBW 50-12
T8
IXYS reserves the right to change limits, test conditions and dimensions.
T
emperature Sensor NTC
Symbol
Conditions
Characteristic
V
alues
min.
typ.
max.
R
25
B
25/50
T = 25°C
4.75
5.0
3375
5.25
k
Ω
K
Module
Symbol
Conditions
Maximum Ratings
T
VJ
T
JM
T
stg
operating
-40...+125
+150
-40...+125
°C
°C
°C
V
ISO
I
ISOL
< 1 mA;
50/60 Hz
2500
V~
M
d
Mounting torque (M5)
3 - 6
Nm
Symbol
Conditions
Characteristic
V
alues
min.
typ.
max.
R
therm-chip
Resistance terminal to chip
5
m
Ω
d
S
d
A
Creepage distance on surf
ace
Strike distance in air
6
6
mm
mm
R
thCH
with heatsink compound
0.01
K/W
W
eight
300
g
Dimensions in mm (1 mm = 0.0394")
© 2006 IXYS All rights reser
ved
5 - 7
0646
MUBW 50-12
T8
IXYS reserves the right to change limits, test conditions and dimensions.
0.00
1
0.01
0.1
1
0
100
200
300
400
500
2
3
4
5
6
7
8 9
1
10
10
2
10
3
10
4
0
20
40
60
80
100
120
140
160
180
0
50
100
150
200
250
300
350
400
450
0
20
40
60
80
100
120
140
0.001
0.01
0.1
1
10
0.01
0.1
1
I
2
t
I
FSM
t
s
t
ms
P
tot
I
d(AV)M
T
amb
t
[s]
Z
thJC
[K/W]
A
2
s
0
20
40
60
80
100
120
140
0
20
40
60
80
100
120
140
160
I
d(AV)
T
C
A
A
C
C
50Hz,
80% V
RRM
T
VJ
= 150°C
R
thA
:
0.05 K/
W
0.15 K/
W
0.3 K
/W
0.5 K
/W
1 K/W
2 K/W
5 K/W
0.4
0.6
0.8
1.0
1.2
1.4
0
20
40
60
80
100
I
F
[A]
V
F
[V]
A
T
VJ
= 45°C
T
VJ
= 150°C
T
VJ
= 45°C
W
T
VJ
= 125°C
T
VJ
= 2
5°C
Fig.
1
T
yp.
forw
ard current vs.
voltage drop per diode
Fig.
2
T
ransient ther
mal impedance junction to case
Input Rectifier Bridge D11 - D16
© 2006 IXYS All rights reser
ved
6 - 7
0646
MUBW 50-12
T8
IXYS reserves the right to change limits, test conditions and dimensions.
0
1
2
3
0
20
40
60
80
100
0
20
40
60
8
0
100
0
2
4
6
8
10
I
C
[A]
V
CE
[V]
I
C
[A]
E
[mJ]
V
GE
= 15 V
4
6
8
10
12
0
20
40
60
80
100
0.0
0
.5
1.0
1.5
2.0
2.5
0
20
40
60
80
100
0
1
2
3
4
5
0
20
40
60
80
100
V
CE
[V]
I
C
[A]
T
VJ
= 125°C
T
VJ
= 125°C
T
VJ
= 25°C
9 V
11 V
V
GE
= 13 V
15 V
17 V
19 V
V
CE
= 20
V
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 25°C
V
CE
= 600
V
V
GE
= ±15 V
R
G
= 18
:
T
VJ
= 125°C
E
rec
E
off
E
on
10
20
30
40
50
60
70
80
0
2
4
6
8
10
12
14
E
off
E
on
E
rec
V
CE
= 600 V
V
GE
= ±15 V
I
C
= 50 A
T
VJ
= 125°C
I
C
[A]
V
GE
[V]
I
F
[A]
V
F
[V]
E
[mJ]
R
G
[
:
]
0.001
0.01
0.1
1
10
0.01
0.1
1
t
[s]
Z
thJC
[K/W]
diode
IGBT
single
pulse
Fig.
3
T
ypical output characteristic
Fig.
4
T
ypical output characteristic
Fig.
5
T
ypical transfer char
acter
istic
Fig.
6
T
ypical f
orward characteristic
of free wheeling diode
Fig.
7
T
yp
.
switching losses
vs.
collector current
Fig.
9
T
ransient thermal
impedance
Fig.
8
T
yp
.
s
witching losses
vs.
gate resistance
Output In
verter
T1 -
T6 / D1 - D6
P1-P3
P4-P6
P7-P7
MUBW50-12T8
Mfr. #:
Buy MUBW50-12T8
Manufacturer:
Littelfuse
Description:
Discrete Semiconductor Modules 50 Amps 1200V
Lifecycle:
New from this manufacturer.
Delivery:
DHL
FedEx
Ups
TNT
EMS
Payment:
T/T
Paypal
Visa
MoneyGram
Western
Union
Products related to this Datasheet
MUBW50-12T8
