BUK7606-55B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 21 June 2010 3 of 14
NXP Semiconductors
BUK7606-55B
N-channel TrenchMOS standard level FET
4. Limiting values
[1] Current is limited by power dissipation chip rating.
[2] Continuous current is limited by package.
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175°C --55V
V
DGR
drain-gate voltage R
GS
=20kΩ --55V
V
GS
gate-source voltage -20 - 20 V
I
D
drain current T
mb
=25°C; V
GS
=10V; see Figure 3;
see Figure 1
[1]
- - 145 A
T
mb
=100°C; V
GS
= 10 V; see Figure 1
[2]
--75A
T
mb
=25°C; V
GS
=10V; see Figure 1;
see Figure 3
[2]
--75A
I
DM
peak drain current T
mb
=25°C; t
p
≤ 10 µs; pulsed;
see Figure 3
- - 582 A
P
tot
total power dissipation T
mb
=25°C; see Figure 2 - - 254 W
T
stg
storage temperature -55 - 175 °C
T
j
junction temperature -55 - 175 °C
Source-drain diode
I
S
source current T
mb
=25°C
[1]
- - 145 A
[2]
--75A
I
SM
peak source current t
p
≤ 10 µs; pulsed; T
mb
= 25 °C - - 582 A
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source
avalanche energy
I
D
=75A; V
sup
≤ 55 V; R
GS
=50Ω;
V
GS
=10V; T
j(init)
= 25 °C; unclamped
- - 680 mJ
