STX93003
HIGH VOLTAGE FAST-SWITCHING
PNP POWER TRANSISTOR
■ ST93003 SILICON IN TO-92 PACKAGE
■ MEDIUM VOLTAGE CAPABILITY
■ LOW SPREAD OF DYNAMIC PARAMETERS
■ MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
■ VERY HIGH SWITCHING SPEED
APPLICATIONS:
■ ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
DESCRIPTION
The device is manufactured using high voltage
Multi-Epitaxial Planar technology for high
switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The STX93003 is expressly designed for a new
solution to be used in compact fluorescent lamps,
where it is coupled with the STX83003, its
complementary NPN transistor.
®
INTERNAL SCHEMATIC DIAGRAM
October 2002
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CES
Collector-Emitter Voltage (V
BE
= 0) -500 V
V
CEO
Collector-Emitter Voltage (I
B
= 0) -400 V
V
EBO
Emitter-Base Voltage (I
C
= 0)
(I
C
= 0, I
B
= -0.5 A, t
p
< 10µs, T
j
< 150
o
C)
V
(BR)EBO
V
I
C
Collector Current -1 A
I
CM
Collector Peak Current (t
p
< 5 ms) -3 A
I
B
Base Current -0.5 A
I
BM
Base Peak Current (t
p
< 5 ms) -1.5 A
P
tot
Total Dissipation at T
C
= 25
o
C 1.5 W
T
stg
Storage Temperature -65 to 150
o
C
T
j
Max. Operating Junction Temperature 150
o
C
TO-92
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