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VS-6CWQ06FNPBF

P1-P3P4-P6P7-P7
Document Number: 94249 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 14-Jan-11 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
Schottky Rectifier, 2 x 3.5 A
VS-6CWQ06FNPbF
Vishay Semiconductors
FEATURES
• Popular D-PAK outline
• Center tap configuration
• Small foot print, surface mountable
• Low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long term
reliability
• Compliant to RoHS Directive 2002/95/EC
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
DESCRIPTION
The VS-6CWQ06FNPbF surface mount, center tap,
Schottky rectifier series has been designed for applications
requiring low forward drop and small foot prints on PC
board. Typical applications are in disk drives, switching
power supplies, converters, freewheeling diodes, battery
charging, and reverse battery protection.
PRODUCT SUMMARY
Package D-PAK (TO-252AA)
I
F(AV)
2 x 3.5 A
V
R
60 V
V
F
at I
F
See Electrical table
I
RM
30 mA at 125 °C
T
J
max. 150 °C
Diode variation Common cathode
E
AS
6 mJ
Base
common
cathode
Common
cathode
2
4
13
Anode Anode
D-PAK (TO-252AA)
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Rectangular waveform 7 A
V
RRM
60 V
I
FSM
t
p
= 5 μs sine 490 A
V
F
3 Apk, T
J
= 25 °C (per leg) 0.61 V
T
J
Range - 40 to 150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-6CWQ06FNPbF UNITS
Maximum DC reverse voltage V
R
60 V
Maximum working peak reverse voltage V
RWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average
forward current
See fig. 5
per leg
I
F(AV)
50 % duty cycle at T
C
= 133 °C, rectangular waveform
3.5
A
per device 7
Maximum peak one cycle
non-repetitive surge current
See fig. 7
I
FSM
5 μs sine or 3 μs rect. pulse
Following any rated
load condition and with
rated V
RRM
applied
490
10 ms sine or 6 ms rect. pulse 70
Non-repetitive avalanche energy per leg E
AS
T
J
= 25 °C, I
AS
= 1 A, L = 12 mH 6 mJ
Repetitive avalanche current per leg I
AR
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
1A
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94249
2 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 14-Jan-11
VS-6CWQ06FNPbF
Vishay Semiconductors
Schottky Rectifier, 2 x 3.5 A
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
Note
(1)
thermal runaway condition for a diode on its own heatsink
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward
voltage drop per leg
See fig. 1
V
FM
(1)
3 A
T
J
= 25 °C
0.61
V
6 A 0.76
3 A
T
J
= 125 °C
0.53
6 A 0.65
Maximum reverse
leakage current per leg
See fig. 2
I
RM
(1)
T
J
= 25 °C
V
R
= Rated V
R
2
mA
T
J
= 125 °C 30
Threshold voltage V
F(TO)
T
J
= T
J
maximum
0.38 V
Forward slope resistance r
t
34.31 m:
Typical junction capacitance per leg C
T
V
R
= 5 V
DC
, (test signal range 100 kHz to 1 MHz), 25 °C 145 pF
Typical series inductance per leg L
S
Measured lead to lead 5 mm from package body 5.0 nH
Maximum voltage rate of change dV/dt Rated V
R
10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
T
J
(1)
, T
Stg
- 40 to 150 °C
Maximum thermal resistance,
junction to case
per leg
R
thJC
DC operation
See fig. 4
4.70
°C/W
per device 2.35
Approximate weight
0.3 g
0.01 oz.
Marking device Case style D-PAK (similar to TO-252AA) 6CWQ06FN
dP
tot
dT
J
-------------
1
R
thJA
--------------<
Document Number: 94249 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 14-Jan-11 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3
VS-6CWQ06FNPbF
Schottky Rectifier, 2 x 3.5 A
Vishay Semiconductors
Fig. 1 - Maximum Forward Voltage Drop Characteristics (Per Leg) Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics (Per Leg)
1.0
100
10
I
F
- Instantaneous
Forward Current (A)
V
FM
- Forward Voltage Drop (V)
0.4 0.8 1.2 1.6 2.0 2.4 2.80
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
0.001
1.0
10
100
0.1
0.01
I
R
- Reverse Current (mA)
V
R
- Reverse Voltage (V)
10 20 50
60
30 40
0
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 75 °C
T
J
= 50 °C
T
J
= 25 °C
10
100
1000
C
T
- Junction Capacitance (pF)
V
R
- Reverse Voltage (V)
2010 30 40 50 600
T
J
= 25 °C
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1
1.0
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
Single pulse
(thermal resistance)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
P1-P3P4-P6P7-P7

VS-6CWQ06FNPBF

Mfr. #:
Buy VS-6CWQ06FNPBF
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers RECOMMENDED ALT 78-VS-6CWQ06FN-M3
Lifecycle:
New from this manufacturer.
Delivery:
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