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SI4324DY-T1-GE3

P1-P3P4-P6P7-P7
www.vishay.com
4
Document Number: 73340
S09-0226-Rev. C, 09-Feb-09
Vishay Siliconix
Si4324DY
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
1.0 1.2
0.001
10
50
0.00 0.2 0.4 0.6 0.8
T
J
= 25 °C
T
J
= 150 °C
V
SD
- Source-to-Drain Voltage (V)
-)A( tnerruC ecruoS I
S
1
0.1
0.01
- 1.0
- 0.7
- 0.4
- 0.1
0.2
0.5
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
T
J
- Temperature (°C)
V
) h t (S
G
) V
(
I
D
= 5 mA
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.000
0.003
0.006
0.009
0.012
0.015
0246810
I
D
= 20 A
V
GS
- Gate-to-Source Voltage (V)
R
)no(SD
(Ω) e c n a t s i s e R - n O e c r u o S - o t - n i a r - D
T
J
= 25 °C
T
J
= 125 °C
0
120
200
40
80
)
W
( re
w
o
P
Time (s)
160
1 10 0.1 0.01 0.001
Safe Operating Area, Junction-to-Ambient
100
1
0.1 1 10 100
0.01
10
-)A(
tne
rruC
nia
rD
I
D
0.1
1 ms
T
A
= 25 °C
Single Pulse
V
DS
- Drain-to-Source Voltage (V)
* V
GS
minimum V
GS
at which R
DS(on)
is specified
1 s
10 s
100 ms
10 ms
DC
Limited by R
DS(on)*
Document Number: 73340
S09-0226-Rev. C, 09-Feb-09
www.vishay.com
5
Vishay Siliconix
Si4324DY
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
5
10
15
20
25
30
35
40
45
0 25 50 75 100 125 150
I
D
)A( tnerruC niar- D
T
C
- Case Temperature (°C)
Package Limited
Power, Junction-to-Foot
0
2
4
6
8
10
0 25 50 75 100 125 150
T
C
- Case Temperature (°C)
r (W)ewoP
Power, Junction-to-Ambient
0.0
0.4
0.8
1.2
1.6
2.0
0 25 50 75 100 125 150
T
A
-Ambient Temperature (°C)
r (W)
e
wo
P
www.vishay.com
6
Document Number: 73340
S09-0226-Rev. C, 09-Feb-09
Vishay Siliconix
Si4324DY
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73340
.
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-2
1 10 600 10
-1
10
-3
100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
itceffE dezilamroN tneisnarT ev
ecnadepmI lamrehT
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 80 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
Normalized Thermal Transient Impedance, Junction-to-Case
10
-3
10
-2
1 10 10
-1
10
-4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
v
itcef
f
E
dez
i
lam
r
oN tneisnarT e
ecnadepmI l
amr
eh
T
P1-P3P4-P6P7-P7

SI4324DY-T1-GE3

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Buy SI4324DY-T1-GE3
Manufacturer:
Vishay
Description:
MOSFET N-CH 30V 36A 8-SOIC
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