CRH01
2013-11-01
1
TOSHIBA High Efficiency Rectifier Silicon Epitaxial Type
CRH01
Switching Mode Power Supply Applications
• Repetitive peak reverse voltage: V
RRM
= 200 V
• Average forward current: I
F (AV)
= 1.0 A
• Low forward voltage: V
FM
= 0.98 V (Max.)
• Very Fast Reverse-Recovery Time: t
rr
= 35 ns (Max.)
• Suitable for compact assembly due to small surface-mount package
“S−FLAT
TM
” (Toshiba package name)
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics Symbol Rating Unit
Repetitive peak reverse voltage V
RRM
200 V
Average forward current I
F(AV)
1.0 A
Peak one cycle surge forward current
(non-repetitive)
I
FSM
15 (50 Hz) A
Junction temperature T
j
−40~150 °C
Storage temperature range T
stg
−40~150 °C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Electrical Characteristics
(Ta
=
25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
V
FM (1)
I
FM
= 0.1 A ⎯ 0.71 ⎯
V
FM (2)
I
FM
= 0.7 A ⎯ 0.86 ⎯
Peak forward voltage
V
FM (3)
I
FM
= 1.0 A ⎯ 0.90 0.98
V
Repetitive peak reverse current I
RRM
V
RRM
= 200 V ⎯ ⎯ 10 μA
Reverse recovery time t
rr
I
F
= 1 A, di/dt = −30 A/μs ⎯ ⎯ 35 ns
Forward recovery time t
fr
I
F
= 1 A ⎯ ⎯ 100 ns
Device mounted on a ceramic board
(soldering land: 2 mm × 2 mm)
⎯
⎯
65
Thermal resistance R
th (j-a)
Device mounted on a glass-epoxy board
(soldering land: 6 mm × 6 mm)
⎯
⎯
130
°C/W
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 3-2A1A
Weight: 0.013 g (typ.)
Start of commercial production
1999-07
