OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

MMBTA55LT1G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 1994
April, 2018 − Rev. 9
1 Publication Order Number:
MMBTA55LT1/D
MMBTA55LSeries,
MMBTA56LSeries,
SMMBTA56LSeries
Driver Transistors
PNP Silicon
Features
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage
MMBTA55
MMBTA56, SMMBTA56
V
CEO
−60
−80
Vdc
Collector−Base Voltage
MMBTA55
MMBTA56, SMMBTA56
V
CBO
−60
−80
Vdc
Emitter−Base Voltage V
EBO
−4.0 Vdc
Collector Current − Continuous I
C
−500 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board
(Note 1) T
A
= 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance, Junction−to−Ambient
R
q
JA
556 °C/W
Total Device Dissipation Alumina
Substrate, (Note 2) T
A
= 25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance, Junction−to−Ambient
R
q
JA
417 °C/W
Junction and Storage Temperature T
J
, T
stg
−55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
SOT−23
CASE 318
STYLE 6
COLLECTOR
3
1
BASE
2
EMITTER
www.onsemi.com
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
1
2xx M G
G
2xx = Device Code
x = H for MMBTA55LT1G
xx = GM for MMBTA56LT1G,
SMMBTA56LT1G
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
MARKING DIAGRAM
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
ORDERING INFORMATION
MMBTA55L Series, MMBTA56L Series, SMMBTA56L Series
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 3)
(I
C
= −1.0 mAdc, I
B
= 0)
MMBTA55
MMBTA56, SMMBTA56
V
(BR)CEO
−60
−80
−
−
Vdc
Emitter−Base Breakdown Voltage
(I
E
= −100 mAdc, I
C
= 0)
V
(BR)EBO
−4.0 −
Vdc
Collector Cutoff Current
(V
CE
= −60 Vdc, I
B
= 0)
I
CES
− −0.1
mAdc
Collector Cutoff Current
(V
CB
= −60 Vdc, I
E
= 0)
MMBTA55
(V
CB
= −80 Vdc, I
E
= 0)
MMBTA56, SMMBTA56
I
CBO
−
−
−0.1
−0.1
mAdc
ON CHARACTERISTICS
DC Current Gain
(I
C
= −10 mAdc, V
CE
= −1.0 Vdc)
(I
C
= −100 mAdc, V
CE
= −1.0 Vdc)
h
FE
100
100
−
−
−
Collector−Emitter Saturation Voltage
(I
C
= −100 mAdc, I
B
= −10 mAdc)
V
CE(sat)
− −0.25
Vdc
Base−Emitter On Voltage
(I
C
= −100 mAdc, V
CE
= −1.0 Vdc)
V
BE(on)
− −1.2
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product (Note 4)
(I
C
= −100 mAdc, V
CE
= −1.0 Vdc, f = 100 MHz)
f
T
50 −
MHz
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
4. f
T
is defined as the frequency at which |h
fe
| extrapolates to unity.
Figure 1. Switching Time Test Circuits
OUTPUT
TURN-ON TIME
-1.0 V
V
CC
+40 V
R
L
* C
S
t 6.0 pF
R
B
100
100
V
in
5.0 mF
t
r
= 3.0 ns
0
+10 V
5.0 ms
OUTPUT
TURN-OFF TIME
+V
BB
V
CC
+40 V
R
L
* C
S
t 6.0 pF
R
B
100
100
V
in
5.0 mF
t
r
= 3.0 ns
5.0 ms
*Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities
MMBTA55L Series, MMBTA56L Series, SMMBTA56L Series
www.onsemi.com
3
Figure 2. Current−Gain — Bandwidth Product Figure 3. Capacitance
I
C
, COLLECTOR CURRENT (mA)
-100 -200-10
200
100
70
50
20
V
R
, REVERSE VOLTAGE (VOLTS)
-1.0 -100-0.1
100
70
50
30
20
10
-2.0
V
CE
= -2.0 V
T
J
= 25°C
f
T
, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
C, CAPACITANCE (pF)
-2.0 -3.0 -5.0 -7.0 -20 -30 -50 -70
30
7.0
5.0
-0.2 -0.5 -5.0 -10 -20 -50
T
J
= 25°C
C
ibo
C
obo
Figure 4. Switching Time
I
C
, COLLECTOR CURRENT (mA)
-10-5.0
500
200
100
50
20
10
-100
t, TIME (ns)
-50 -200 -500
1.0 k
300
700
70
30
-7.0 -300-70-20 -30
V
CC
= -40 V
I
C
/I
B
= 10
I
B1
= I
B2
T
J
= 25°C
t
s
t
f
t
r
t
d
@ V
BE(off)
= -0.5 V
Figure 5. DC Current Gain
-2.0 -500-0.5
I
C
, COLLECTOR CURRENT (mA)
400
200
100
80
60
40
-10
, DC CURRENT GAIN
T
J
= 125°C
-1.0
-5.0
V
CE
= -1.0 V
-20 -100-50 -200
h
FE
25°C
-55°C
Figure 6. Collector Emitter Saturation Voltage
vs. Collector Current
Figure 7. Base Emitter Saturation Voltage vs.
Collector Current
I
C
, COLLECTOR CURRENT (A) I
C
, COLLECTOR CURRENT (A)
10.10.010.001
0.01
0.1
1
10.10.010.0010.0001
0.2
0.3
0.4
0.6
0.7
0.8
1.0
1.1
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
V
BE(sat)
, BASE−EMITTER
SATURATION VOLTAGE (V)
I
C
/I
B
= 10
150°C
25°C
−55°C
0.5
0.9
I
C
/I
B
= 10
150°C
25°C
−55°C
P1-P3P4-P5

MMBTA55LT1G

Mfr. #:
Buy MMBTA55LT1G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 500mA 60V PNP
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet