T835T-8I Datasheet T835T-8I | P1-P3

November 2017

DocID030985 Rev 2

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This is information on a product in full production.

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T835T-8I

8 A Snubberless™ Triac

Datasheet - production data

Features

 High static dV/dt

 High dynamic commutation

 150 °C maximum T

j

 Three quadrants

 Built-in ceramic for tab insulation

 Compliance to UL1557 standard (ref :

E81734)

 ECOPACK

®

2 compliant component

 Complies with UL94,V0

 Surge capability V

DSM

, V

RSM

= 900 V

Benefits

 Device is less likely to have false turn-on

thanks to high dV/dt

 Better turn-off in high temperature

environments thanks to (dI/dt)c

 Increase of thermal margin due to extended

working T

j

up to 150 °C

 Better thermal resistance due to the ceramic

inside the package

Applications

 General purpose AC line load switching

 Motor control circuits

 Home appliances

 Heating

 Lighting

 Inrush current limiting circuits

 Overvoltage crowbar protection

Description

Available in through-hole package, the T835T-8I

Triac can be used for the on/off or phase angle

control function in general purpose AC switching

where high commutation capability is required.

This device can be used without a snubber RC

circuit when the limits defined are respected.

TO-220AB insulated provides tab insulation,

UL1557 certified, rated at 2.5 kV RMS and

UL-94, V0 resin compliance.

Package environmentally friendly ECOPACK

®

2

graded (RoHS and Halogen Free compliance).

Snubberless™ is a trademark of STMicroelectronics.

Figure 1: Functional diagram

Table 1: Device summary

Symbol

Value

Unit

I

T(RMS)

8

A

V

DRM

/V

RRM

800

V

DSM

/V

RSM

900

V

I

GT

35

mA

A1

A2

G

TO220AB insulated

A2

A1

G

A2: Anode2

A1: Anode1

G : Gate

Characteristics

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Table 2: Absolute maximum ratings (limiting values)

Symbol

Parameter

Value

Unit

I

T(RMS)

RMS on-state current (full sine wave)

T

c

= 118 °C

8

A

I

TSM

Non repetitive surge peak on-state current,

T

j

initial = 25 °C

t

p

= 16.7 ms

63

A

t

p

= 20 ms

60

I

2

t

I

2

t value for fusing, t

p

= 10 ms

T

j

initial = 25 °C

24

A

2

s

dl/dt

Critical rate of rise of on-state

current, I

G

= 2 x I

GT

, tr ≤ 100 ns

T

j

= 150 °C

f = 100 Hz

100

A/µs

V

DRM

/V

RRM

Repetitive peak off-state voltage

T

j

= 150 °C

600

V

T

j

= 125 °C

800

V

DSM

/V

RSM

Non Repetitive peak off-state voltage

t

p

= 10 ms

900

V

I

GM

Peak gate current

t

p

= 20 µs

T

j

= 150 °C

4

A

P

G(AV)

Average gate power dissipation

T

j

= 150 °C

1

W

T

stg

Storage junction temperature range

-40 to +150

°C

T

j

Operating junction temperature range

-40 to +150

°C

T

L

Maximum lead temperature for soldering during 10 s

260

°C

V

ins

Insulation RMS voltage, 1 minute, UL1557 certified (E81734)

2.5

kV

Table 3: Electrical characteristics (T

j

= 25 °C, unless otherwise specified)

Symbol

Test Conditions

Value

Unit

I

GT

(1)

V

D

= 12 V, R

L

= 30 Ω

I - II - III

Min.

1.75

mA

V

D

= 12 V, R

L

= 30 Ω

I - II - III

Max.

35

mA

V

GT

V

D

= 12 V, R

L

= 30 Ω

I - II - III

Max.

1.3

V

GD

V

D

= V

DRM

, R

L

= 3.3 kΩ, T

j

= 150 °C

I - II - III

Min.

0.2

V

I

L

I

G

= 1.2 x I

GT

I - III

Max.

60

mA

II

Max.

70

mA

I

H

I

T

= 500 mA, gate open

Max.

40

mA

dV/dt

V

D

= 536 V, gate open

T

j

= 125 °C

Min.

2000

V/µs

V

D

= 402 V, gate open

T

j

= 150 °C

1000

V/µs

(dl/dt)c

Without snubber, (dV/dt)c > 20 V/µs

T

j

= 125 °C

Min.

8

A/ms

T

j

= 150 °C

4

A/ms

Notes:

(1)

For both polarities of A2 referenced to A1.

T835T-8I

Characteristics

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Table 4: Static characteristics

Symbol

Test conditions

T

j

Value

Unit

V

TM

(1)

I

T

= 11.3 A, t

p

= 380 µs

25 °C

Max.

1.60

V

TO

Threshold on-state voltage

150 °C

Max.

0.87

V

R

D

Dynamic resistance

150 °C

Max.

80

mΩ

I

DRM

/I

RRM

V

DRM

= V

RRM

= 800 V

25 °C

Max.

5

µA

125°C

1.0

mA

V

DRM

= V

RRM

= 600 V

150 °C

Max.

2.5

mA

Notes:

(1)

For both polarities of A2 referenced to A1.

Table 5: Thermal resistance

Symbol

Parameter

Value

Unit

R

th(j-c)

Junction to case (AC)

Max.

2.8

°C/W

R

th(j-a)

Junction to ambient

Typ.

60

T835T-8I

T835T-8I

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