©2003 Fairchild Semiconductor Corporation Rev. A, May 2003
FJP5021
NPN Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Electrical Characteristics
T
C
=25°C unless otherwise noted
h
FE
Classification
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage 800 V
V
CEO
Collector-Emitter Voltage 500 V
V
EBO
Emitter-Base Voltage 7 V
I
C
Collector Current (DC) 5 A
I
CP
Collector Current (Pulse) 10 A
I
B
Base Current 2 A
P
C
Collector Dissipation (T
C
=25°C) 50 W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature - 55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
Collector-Base Breakdown Voltage I
C
= 1mA, I
E
= 0 800 V
BV
CEO
Collector-Emitter Breakdown Voltage I
C
= 5mA, I
B
= 0 500 V
BV
EBO
Emitter-Base Breakdown Voltage I
E
= 1mA, I
C
= 0 7 V
V
CEX
(sus) Collector-Emitter Sustaining Voltage I
C
= 2.5A, I
B1
= -I
B2
= 1A
L = 1mH, Clamped
500 V
I
CBO
Collector Cut-off Current V
CB
= 500V, I
E
= 0 10 µA
I
EBO
Emitter Cut-off Current V
EB
= 5V, I
C
= 0 10 µA
h
FE1
h
FE2
DC Current Gain V
CE
= 5V, I
C
= 0.6A
V
CE
= 5V, I
C
= 3A
15
8
50
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
= 3A, I
B
= 0.6A 1 V
V
BE
(sat) Base-Emitter Saturation Voltage I
C
= 3A, I
B
= 0.6A 1.5 V
C
ob
Output Capacitance V
CB
= 10V, I
E
= 0, f=1MHz 80 pF
f
T
Current Gain Bandwidth Product V
CE
= 10V, I
C
= 0.6A 18 MHz
t
ON
Turn On Time V
CC
= 200V
I
C
= 5I
B1
= -2.5I
B2
= 4A
R
L
= 50Ω
0.5 µs
t
STG
Storage Time 3 µs
t
F
Fall Time 0.1 0.3 µs
Classification R O Y
h
FE1
15 ~ 30 20 ~ 40 30 ~ 50
FJP5021
High Voltage and High Reliability
• High Speed Switching : t
F
= 0.1µs (Typ.)
• Wide SOA
1.Base 2.Collector 3.Emitter
1
TO-220
