APTGF50H60T1G
APTGF50H60T1G – Rev1 October, 2012
www.microsemi.com
1
7
Q3
Q4
1
2
9
Q2
Q1
6
4
11
8
10
12
CR2
CR1
3
7
5
NTC
CR4
CR3
Pins 3/4 must be shorted together
Absolute maximum ratings
Symbol Parameter Max ratings Unit
V
CES
Collector - Emitter Breakdown Voltage 600 V
T
C
= 25°C
65*
I
C
Continuous Collector Current
T
C
= 80°C
50*
I
CM
Pulsed Collector Current T
C
= 25°C 230
A
V
GE
Gate – Emitter Voltage ±20 V
P
D
Maximum Power Dissipation T
C
= 25°C 250 W
RBSOA Reverse Bias Safe Operating Area T
j
= 125°C 100A @ 500V
* Specification of IGBT device but output current must be limited to 40A to not exceed a delta of temperature greater
than 35°C for the connectors.
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
See application note
APT0502 on www.microsemi.com
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
Non Punch Through (NPT) Fast IGBT
- Low voltage drop
- Low tail current
- Switching frequency up to 100 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
Very low stray inductance
- Symmetrical design
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
Each leg can be easily paralleled to achieve a phase
leg of twice the current capability
RoHS Compliant
Full - Bridge
PT IGBT Power Module
V
CES
= 600V
I
C
= 50A* @ Tc = 80°C