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ZXT13N50DE6TA

P1-P3P4-P6P7-P7
APTGF50H60T1G
APTGF50H60T1G – Rev1 October, 2012
www.microsemi.com
1
–
7
Q3
Q4
1
2
9
Q2
Q1
6
4
11
8
10
12
CR2
CR1
3
7
5
NTC
CR4
CR3
Pins 3/4 must be shorted together
Absolute maximum ratings
Symbol Parameter Max ratings Unit
V
CES
Collector - Emitter Breakdown Voltage 600 V
T
C
= 25°C
65*
I
C
Continuous Collector Current
T
C
= 80°C
50*
I
CM
Pulsed Collector Current T
C
= 25°C 230
A
V
GE
Gate – Emitter Voltage ±20 V
P
D
Maximum Power Dissipation T
C
= 25°C 250 W
RBSOA Reverse Bias Safe Operating Area T
j
= 125°C 100A @ 500V
* Specification of IGBT device but output current must be limited to 40A to not exceed a delta of temperature greater
than 35°C for the connectors.
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
See application note
APT0502 on www.microsemi.com
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
Non Punch Through (NPT) Fast IGBT
- Low voltage drop
- Low tail current
- Switching frequency up to 100 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
Very low stray inductance
- Symmetrical design
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
Each leg can be easily paralleled to achieve a phase
leg of twice the current capability
RoHS Compliant
Full - Bridge
N
PT IGBT Power Module
V
CES
= 600V
I
C
= 50A* @ Tc = 80°C
APTGF50H60T1G
APTGF50H60T1G – Rev1 October, 2012
www.microsemi.com
2
–
7
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
T
j
= 25°C
250
I
CES
Zero Gate Voltage Collector Current
V
GE
= 0V
V
CE
= 600V
T
j
= 125°C
500
µA
T
j
= 25°C
1.7 2.0 2.45
V
CE(sat)
Collector Emitter Saturation Voltage
V
GE
=15V
I
C
= 50A
T
j
= 125°C
2.2
V
V
GE(th)
Gate Threshold Voltage V
GE
= V
CE
, I
C
= 1mA 4 6 V
I
GES
Gate – Emitter Leakage Current V
GE
= 20V, V
CE
= 0V 400 nA
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
C
ies
Input Capacitance 2200
C
oes
Output Capacitance 323
C
res
Reverse Transfer Capacitance
V
GE
= 0V
V
CE
= 25V
f = 1MHz
200
pF
Q
g
Total gate Charge 166
Q
ge
Gate – Emitter Charge 20
Q
gc
Gate – Collector Charge
V
GE
= 15V
V
Bus
= 300V
I
C
= 50A
100
nC
T
d(on)
Turn-on Delay Time 40
T
r
Rise Time 9
T
d(off)
Turn-off Delay Time 120
T
f
Fall Time
Inductive Switching (25°C)
V
GE
= 15V
V
Bus
= 400V
I
C
= 50A
R
G
= 2.7
12
ns
T
d(on)
Turn-on Delay Time 42
T
r
Rise Time 10
T
d(off)
Turn-off Delay Time 130
T
f
Fall Time
Inductive Switching (125°C)
V
GE
= 15V
V
Bus
= 400V
I
C
= 50A
R
G
= 2.7
21
ns
E
on
Turn-on Switching Energy T
j
= 125°C 0.5
E
off
Turn-off Switching Energy
V
GE
= 15V
V
Bus
= 400V
I
C
= 50A
R
G
= 2.7
T
j
= 125°C 1
mJ
Reverse diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
V
RRM
Maximum Peak Repetitive Reverse Voltage
600 V
T
j
= 25°C 25
I
RM
Maximum Reverse Leakage Current V
R
=600V
T
j
= 125°C 500
µA
I
F
DC Forward Current
Tc = 80°C 30 A
I
F
= 30A 1.8 2.2
I
F
= 60A 2.2
V
F
Diode Forward Voltage
I
F
= 30A T
j
= 125°C
1.5
V
T
j
= 25°C 25
t
rr
Reverse Recovery Time
T
j
= 125°C 160
ns
T
j
= 25°C 35
Q
rr
Reverse Recovery Charge
I
F
= 30A
V
R
= 400V
di/dt =200A/µs
T
j
= 125°C 480
nC
APTGF50H60T1G
APTGF50H60T1G – Rev1 October, 2012
www.microsemi.com
3
–
7
Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
IGBT
0.5
R
thJC
Junction to Case Thermal Resistance
Diode
1.2
°C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
4000 V
T
J
Operating junction temperature range -40 150
T
STG
Storage Temperature Range -40 125
T
C
Operating Case Temperature -40 100
°C
Torque Mounting torque To heatsink M4 2 3 N.m
Wt Package Weight 80 g
Temperature sensor NTC
(see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic Min Typ Max Unit
R
25
Resistance @ 25°C 50
k
B
25/85
T
25
= 298.15 K 3952
K
TT
B
R
R
T
11
exp
25
85/25
25
SP1 Package outline
(dimensions in mm)
See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com
T: Thermistor temperature
R
T
: Thermistor value at T
P1-P3P4-P6P7-P7

ZXT13N50DE6TA

Mfr. #:
Buy ZXT13N50DE6TA
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT NPN 50V Low Sat
Lifecycle:
New from this manufacturer.
Delivery:
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