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MJF3055G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2008
July, 2008 − Rev. 7
1 Publication Order Number:
MJF3055/D
MJF3055 (NPN),
MJF2955 (PNP)
Complementary
Silicon Power Transistors
Specifically designed for general purpose amplifier and switching
applications.
Features
• Isolated Overmold Package (1500 Volts RMS Min)
• Electrically Similar to the Popular MJE3055T and MJE2955T
• Collector−Emitter Sustaining Voltage − V
CEO(sus)
90 Volts
• 10 Amperes Rated Collector Current
• No Isolating Washers Required
• Reduced System Cost
• UL Recognized, File #E69369, to 3500 V
RMS
Isolation
• Epoxy Meets UL 94 V−0 at 0.125 in
• ESD Ratings: Machine Model, C; u400 V
Human Body Model, 3B; u8000 V
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Sustaining Voltage V
CEO(sus)
90 Vdc
Collector−Emitter Breakdown Voltage V
CES
90 Vdc
Base−Emitter Voltage V
EBO
5.0 Vdc
Collector Current − Continuous I
C
10 Adc
Base Current − Continuous I
B
6.0 Adc
RMS Isolation Voltage (Note 3)
(t = 0.3 sec, R.H. ≤ 30%, T
A
= 25_C)
Per Figure 5
V
ISOL
4500
V
RMS
Total Power Dissipation @ T
C
= 25_C (Note 2)
Derate above 25_C
P
D
30
0.25
W
W/_C
Total Power Dissipation @ T
A
= 25_C
Derate above 25_C
P
D
2.0
0.016
W
W/_C
Operating and Storage Temperature Range T
J
, T
stg
–55 to
+150
_C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case (Note 2)
R
q
JC
4.0
_C/W
Thermal Resistance, Junction−to−Ambient
R
q
JA
62.5
_C/W
Lead Temperature for Soldering Purposes T
L
260
_C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle v 10%.
2. Measurement made with thermocouple contacting the bottom insulated
surface (in a location beneath the die), the devices mounted on a heatsink with
thermal grease and a mounting torque of ≥ 6 in. lbs.
3. Proper strike and creepage distance must be provided.
*For additional information on our Pb−Free strategy and soldering details,
please download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device Package Shipping
ORDERING INFORMATION
MJF2955 TO−220 FULLPACK
TO−220 FULLPACK
CASE 221D
STYLE 2
50 Units/Rail
3
1
COMPLEMENTARY SILICON
POWER TRANSISTORS
10 AMPERES
90 VOLTS, 30 WATTS
2
http://onsemi.com
MJF3055 50 Units/Rail
MJF3055G 50 Units/Rail
MJF2955G TO−220 FULLPACK
(Pb−Free)
50 Units/Rail
Fxx55 = Specific Device Code
xx= 29 or 30
G=Pb−Free Package
A = Assembly Location
Y = Year
WW = Work Week
Fxx55G
AYWW
MARKING DIAGRAM
TO−220 FULLPACK
TO−220 FULLPACK
(Pb−Free)
MJF3055 (NPN), MJF2955 (PNP)
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
C
= 25_C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS (Note 4)
Collector−Emitter Sustaining Voltage
(I
C
= 200 mAdc, I
B
= 0)
V
CEO(sus)
90 − Vdc
Collector Cutoff Current
(V
CE
= 90 Vdc, V
BE
= 0)
I
CES
− 1.0
mAdc
Collector Cutoff Current
(V
CE
= 90 Vdc, I
E
= 0)
I
CBO
− 1.0
mAdc
Emitter−Base Leakage
(V
EB
= 5.0 Vdc, I
C
= 0)
I
EBO
− 1.0
mAdc
ON CHARACTERISTICS (Note 4)
DC Current Gain (I
CE
= 4.0 Adc, V
CE
= 4.0 Vdc)
DC Current Gain (I
CE
= 10 Adc, V
CE
= 4.0 Vdc)
h
FE
20
5.0
100
−
−
Collector−Emitter Saturation Voltage
(I
C
= 4.0 Adc, I
B
= 0.4 Adc)
(I
C
= 10 Adc, I
B
= 3.3 Adc)
V
CE(sat)
−
−
1.0
2.5
Vdc
Base−Emitter On Voltage
(I
C
= 4.0 Adc, V
BE
= 4.0 Vdc)
V
BE(on)
− 1.5 Vdc
DYNAMIC CHARACTERISTICS
Current−Gain−Bandwidth Product
(V
CE
= 10 Vdc, I
C
= 0.5 Adc, f
test
= 500 kHz)
f
T
2.0 − MHz
4. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle v 10%.
MJF3055 (NPN), MJF2955 (PNP)
http://onsemi.com
3
I
C
, COLLECTOR CURRENT (AMPS)
0.01
I
C
, COLLECTOR CURRENT (AMP)
5
0.05 0.1 2
30
500
h
FE
, DC CURRENT GAIN
V
CE
= 2 V
T
J
= 150°C
50
25°C
-55°C
10
0.02
0.2 0.5 1
300
200
100
20
I
C
, COLLECTOR CURRENT (AMP)
1.4
1.2
0.8
2
I
C
, COLLECTOR CURRENT (AMP)
1.6
1.2
0.8
0.4
Figure 1. Maximum Forward Bias Safe
Operating Area
Figure 2. DC Current Gain
Figure 3. “On” Voltages
0.2
0
0
0.4
0.2 10.5 100.1 0.3 325
0.6
1
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
100 ms
dc
20
1
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.3
2 100
5
3
10
2
0.5
CURRENT LIMIT
SECONDARY BREAKDOWN LIMIT
THERMAL LIMIT @ T
C
= 25°C
(SINGLE PULSE)
3 5 10 20
1
0.2
30
5 ms
50
510
V
BE(sat)
@ I
C
/I
B
= 10
V
BE
@ V
CE
= 3 V
PNP
MJF3055
PNP
MJF2955
T
J
= 25°C
0.2 10.5 100.1 0.3 325
T
J
= 150°C
1 ms
V
CE(sat)
@ I
C
/I
B
= 10
T
J
= 25°C
V
BE(sat)
@ I
C
/I
B
= 10
V
BE
@ V
CE
= 2 V
V
CE(sat)
@ I
C
/I
B
= 10
T, TEMPERATURE (°C)
0 100
0
1.0
160
2.0
3.0
60
80
40 140
4.0
20 120
T
C
T
A
0
10
20
30
40
T
C
T
A
P
D
, POWER DISSIPATION (WATTS)
Figure 4. Power Derating
P1-P3P4-P5

MJF3055G

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Buy MJF3055G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 10A 90V 30W NPN
Lifecycle:
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