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BYV79E-200,127
P1-P3
P4-P6
P7-P9
1;3
Semiconductors
Product specification
Rectifier diodes
BYV79E series
ultrafast, rugged
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-mb
Thermal resistance junction to
-
-
2
K/W
mounting base
R
th j-a
Thermal resistance junction to
in free air
-
60
-
K/W
ambient
STATIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
Forward voltage
I
F
= 14 A; T
j
= 150˚C
-
0.83
0.90
V
I
F
= 14 A
-
0.95
1.05
V
I
F
= 50 A
-
1.2
1.4
V
I
R
Reverse current
V
R
= V
RWM
; T
j
= 100 ˚C
-
0.5
1.3
mA
V
R
= V
RWM
-5
5
0
μ
A
Q
s
Reverse recovery charge
I
F
= 2 A; V
R
≥
30 V; -dI
F
/dt = 20 A/
μ
s-
6
1
5
n
C
t
rr1
Reverse recovery time
I
F
= 1 A; V
R
≥
30 V;
-
20
30
ns
-dI
F
/dt = 100 A/
μ
s
t
rr2
Reverse recovery time
I
F
= 0.5 A to I
R
= 1 A; I
rec
= 0.25 A
-
13
22
ns
V
fr
Forward recovery voltage
I
F
= 1 A; dI
F
/dt = 10 A/
μ
s-
1
-
V
July 1998
2
Rev 1.200
1;3
Semiconductors
Product specification
Rectifier diodes
BYV79E series
ultrafast, rugged
Fig.1. Definition of t
rr1
, Q
s
and I
rrm
Fig.2. Definition of V
fr
Fig.3. Circuit schematic for t
rr2
Fig.4. Definition of t
rr2
Fig.5. Maximum forward dissipation P
F
= f(I
F(AV)
);
square current waveform where I
F(AV)
=I
F(RMS)
x
√
D.
Fig.6. Maximum forward dissipation P
F
= f(I
F(AV)
);
sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
Q
s
100%
10%
time
dI
dt
F
I
R
I
F
I
rrm
t
rr
I = 1A
R
rec
I
= 0.25A
0A
trr2
0.5A
IF
IR
time
time
V
F
V
fr
V
F
I
F
0
5
10
15
20
25
0
5
10
15
20
0.5
0.2
0.1
BYV79
IF(AV) / A
PF / W
D = 1.0
Tmb(max) / C
150
140
130
120
110
Vo = 0.744 V
Rs = 0.0112 Ohms
D =
t
p
t
p
T
T
t
I
shunt
Current
to ’scope
D.U.T.
Voltage Pulse Source
R
0
5
10
15
0
5
10
15
1.9
2.2
2.8
4
BYV79
IF(AV) / A
PF / W
Tmb(max) / C
150
140
130
120
a = 1.57
Vo = 0.744 V
Rs = 0.0112 Ohms
July 1998
3
Rev 1.200
1;3
Semiconductors
Product specification
Rectifier diodes
BYV79E series
ultrafast, rugged
Fig.7. Maximum t
rr
at T
j
= 25 ˚C.
Fig.8. Maximum I
rrm
at T
j
= 25 ˚C.
Fig.9. Typical and maximum forward characteristic
I
F
= f(V
F
); parameter T
j
Fig.10. Maximum Q
s
at T
j
= 25 ˚C.
Fig.11. Transient thermal impedance; Z
th j-mb
= f(t
p
).
1
10
trr / ns
1
10
100
1000
dIF/dt (A/us)
IF=1A
IF=10A
100
1.0
10
100
Qs / nC
1.0
10
100
-dIF/dt (A/us)
1000
IF=10A
5A
2A
10
1
0.1
0.01
Irrm / A
1
10
100
-dIF/dt (A/us)
IF=10A
IF=2A
1us
10us
100us
1ms
10ms
100ms
1s
10s
0.001
0.01
0.1
1
10
BYV79E
pulse width, tp (s)
Transient thermal impedance, Zth j-mb (K/W)
D =
t
p
t
p
T
T
P
t
D
0
2
60
50
40
30
20
10
0
max
typ
Tj = 150 C
Tj = 25 C
1.0
0.5
IF / A
VF / V
1.5
July 1998
4
Rev 1.200
P1-P3
P4-P6
P7-P9
BYV79E-200,127
Mfr. #:
Buy BYV79E-200,127
Manufacturer:
WeEn Semiconductors
Description:
Rectifiers RECT UFAST 200VAC
Lifecycle:
New from this manufacturer.
Delivery:
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