83947 Data Sheet
©2016 Integrated Device Technology, Inc Revision B March 17, 20163
TABLE 4A. POWER SUPPLY DC CHARACTERISTICS, V
DD
= V
DDO
= 3.3V±0.3V, TA = -40°C TO 85°C
TABLE 4B. LVCMOS/LVTTL DC CHARACTERISTICS, V
DD
= V
DDO
= 3.3V±0.3V, TA = -40°C TO 85°C
Symbol Parameter Test Conditions Minimum Typical Maximum Units
V
DD
Coret Supply Voltage 3.0 3.3 3.6 V
V
DDO
Output Supply Voltage 3.0 3.3 3.6 V
I
DD
Input Supply Current 33 50 mA
Symbol Parameter Test Conditions Minimum Typical Maximum Units
V
IH
Input High Voltage 2 3.6 V
V
IL
Input Low Voltage 0.8 V
I
IN
Input Current
CLK0, CLK1, CLK_SEL,
OE, CLK_EN
-100 µA
V
OH
Output High Voltage I
OH
= -20mA 2.5 V
V
OL
Output Low Voltage I
OL
= 20mA 0.4 V
ABSOLUTE MAXIMUM RATINGS
Supply Voltage, V
DD
4.6V
Inputs, V
I
-0.5V to V
DD
+ 0.5 V
Outputs, V
O
-0.5V to V
DDO
+ 0.5V
Package Thermal Impedance, θ
JA
47.9°C/W (0 lfpm)
Storage Temperature, T
STG
-65°C to 150°C
NOTE: Stresses beyond those listed under Absolute
Maximum Ratings may cause permanent damage to the
device. These ratings are stress specifi cations only. Functional
operation of product at these conditions or any conditions
beyond those listed in the DC Characteristics or AC Charac-
teristics is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect product reliability.
