MBR30H80CT, MBRB30H80CT−1
http://onsemi.com
2
MAXIMUM RATINGS (Per Diode Leg)
Rating
Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
80 V
Average Rectified Forward Current
(T
C
= 130°C) Per Diode
Per Device
I
F(AV)
15
30
A
Peak Repetitive Forward Current
(Square Wave, 20 kHz, T
C
= 130°C)
I
FM
30 A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
I
FSM
240 A
Storage Temperature T
stg
−65 to +175 °C
Operating Junction Temperature (Note 1) T
J
−20 to +150 °C
ESD Ratings: Machine Model = C
Human Body Model = 3B
> 400
> 8000
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP
D
/dT
J
< 1/R
q
JA
.
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Maximum Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient
R
q
JC
R
q
JA
2.0
70
°C/W
ELECTRICAL CHARACTERISTICS (Per Diode Leg)
Characteristic
Symbol Min Typ Max Unit
Maximum Instantaneous Forward Voltage (Note 2)
(i
F
= 3 A, T
J
= 25°C)
(i
F
= 3 A, T
J
= 25°C)
(i
F
= 15 A, T
J
= 25°C)
(i
F
= 15 A, T
J
= 125°C)
(i
F
= 30 A, T
J
= 25°C)
(i
F
= 30 A, T
J
= 125°C)
v
F
−
−
−
−
−
−
0.49
0.37
0.65
0.55
0.77
0.67
0.58
0.45
0.78
0.65
0.88
0.75
V
Maximum Instantaneous Reverse Current (Note 2)
(Rated DC Voltage, T
J
= 125°C)
(Rated DC Voltage, T
J
= 25°C)
i
R
−
−
12
0.017
35
0.250
mA
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
DEVICE ORDERING INFORMATION
Device Order Number Package Type Shipping
†
MBR30H80CTG TO−220
(Pb−Free)
50 Units / Rail
MBRB30H80CT−1G I
2
PAK
(Pb−Free)
50 Units / Rail
