CDBU0130R
Page 1
QW-A1108
REV:A
Comchip Technology CO., LTD.
A
mA
V
V
1
100
30
35
IO
VR
VRRM
IFSM
8.3ms single half sine-wave superimposed
on rate load(JEDEC method)
O
C
O
C
+125
+125
-40
TSTG
Tj
Storage temperature
Junction temperature
Average forward current
Reverse voltage
Repetitive peak reverse voltage
Forward current,surge peak
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
uA
V
0.5
0.45
IR
VF
Reverse current
Forward voltage
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
VR = 10 V
IF = 10 mA
O
Maximum Rating (at TA=25 C unless otherwise noted)
O
Electrical Characteristics (at TA=25 C unless otherwise noted)
0.071(1.80)
0.063(1.60)
0.014(0.35) Typ.
0.039(1.00)
0.031(0.80)
0.033(0.85)
0.027(0.70)
Dimensions in inches and (millimeter)
0.012 (0.30) Typ.
0.028(0.70) Typ.
SMD Schottky Barrier Diode
0603/SOD-523F
Io = 100 mA
VR = 30 Volts
RoHS Device
Features
-
-Designed for mounting on small surface.
-Extremely thin / leadless package.
-Majority carrier conduction.
Mechanical data
-Case: 0603/SOD-523F standard package,
molded plastic.
-Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
-Marking Code: Cathode band & BQ
-Mounting position: Any.
-Weight: 0.003 gram(approx.).
Low reverse current.
