SM-8 COMPLEMENTARY MEDIUM POWER
TRANSISTORS
ISSUE 1 - NOVEMBER 1995
PARTMARKING DETAIL T6757
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL NPN PNP UNIT
Collector-Base Voltage V
CBO
300 -300 V
Collector-Emitter Voltage V
CEO
300 -300 V
Emitter-Base Voltage V
EBO
5-5 V
Peak Pulse Current I
CM
1-1 A
Continuous Collector Current I
C
0.5 -0.5 A
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
THERMAL CHARACTERISTICS
PARAMETER SYMBOL VALUE UNIT
Total Power Dissipation at T
amb
= 25°C*
Any single die on
Both die on equally
P
tot
2.25
2.75
W
W
Derate above 25°C*
Any single die on
Both die on equally
18
22
mW/ °C
mW/ °C
Thermal Resistance - Junction to Ambient*
Any single die on
Both die on equally
55.6
45.5
°C/ W
°C/ W
* The power which can be dissipated assuming the device is mounted in a typical manner
on a PCB with copper equal to 2 inches square.
ZDT6757
SM-8
(8 LEAD SOT223)
C
1
C
1
C
2
C
2
B
1
E
1
B
2
E
2
NPN
NPN TRANSISTOR
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
300 V
I
C
=100µA, I
E
=0
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
300 V I
C
=10mA, I
B
=0*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
5V
I
E
=100µA, I
C
=0
Collector Cutoff
Current
I
CBO
100 nA V
CB
=200V, I
E
=0
Emitter Cutoff Current I
EBO
100 nA V
EB
=3V, I
C
=0
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.5 V I
C
=100mA, I
B
=10mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
1VI
C
=100mA, I
B
=10mA*
Base-Emitter Turn-On
Voltage
V
BE(on)
1VI
C
=100mA, V
CE
=5V*
Static Forward
Current Transfer Ratio
h
FE
50
40
I
C
=100mA, V
CE
=5V
I
C
=10mA, V
CE
=5V
Transition
Frequency
f
T
30 MHz I
C
=10mA, V
CE
=20V
f=20MHz
Output Capacitance C
obo
20 pF V
CB
=20V, f=1MHz
*Measured under pulsed conditions. Pulse width=300
µs. Duty cycle ≤ 2%
For typical characteristics graphs see FZT657 datasheet.
ZDT6757
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