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LND250K1-G

P1-P3
Supertex inc.
Supertex inc.
www.supertex.com
Doc.# DSFP-LND250
B012314
LND250
General Description
The LND250 is a high voltage N-channel depletion mode
(normally-on) transistor utilizing Supertex’s lateral DMOS
technology. The gate is ESD protected.
The LND250 is ideal for high voltage applications in the
areas of normally-on switches, precision constant current
sources, voltage ramp generation and amplication.
N-Channel Depletion-Mode
DMOS FET
Absolute Maximum Ratings
Parameter Value
Drain-to-source BV
DSX
Drain-to-gate BV
DGX
Gate-to-source ±20V
Operating and storage temperature -55
O
C to +150
O
C
Absolute Maximum Ratings are those values beyond which damage to the device may
occur. Functional operation under these conditions is not implied. Continuous operation
of the device at the absolute rating level may affect device reliability. All voltages are
referenced to device ground.
Product Marking
Features
► Free from secondary breakdown
► Low power drive requirement
► Ease of paralleling
► Excellent thermal stability
► Integral source-drain diode
► High input impedance and low C
ISS
► ESD gate protection
Applications
► Solid state relays
► Normally-on switches
► Converters
► Power supply circuits
► Constant current sources
► Input protection circuits
Packages may or may not include the following marks: Si or
Pin Conguration
TO-236AB (SOT-23)
TO-236AB (SOT-23)
DRAIN
SOURCE
GATE
NDEW
W = Code for Week Sealed
= “Green” Packaging
Product Summary
BV
DSX
/BV
DGX
(V)
R
DS(ON)
(max)
I
DSS
(min)
500 1.0kΩ 1.0mA
Ordering Information
Part Number Package Options Packing
LND250K1-G* TO-236AB (SOT-23) 3000/Reel
-G denotes a lead (Pb)-free / RoHS compliant package
* Part is not recommended for new designs. Please refer to LND150K1-G.
2
Supertex inc.
www.supertex.com
Doc.# DSFP-LND250
B012314
LND250
Electrical Characteristics (T
A
= 25
O
C unless otherwise specied)
Sym Parameter Min Typ Max Units Conditions
BV
DSX
Drain-to-source breakdown voltage 500 - - V V
GS
= -10V, I
D
= 1.0mA
V
GS(OFF)
Gate-to-source off voltage -1.0 - -3.0 V V
GS
= 25V, I
D
= 100nA
ΔV
GS(OFF)
Change in V
GS(OFF)
with temperature - - 5.0 mV/
O
C V
GS
= 25V, I
D
= 100nA
I
GSS
Gate body leakage current - - 100 nA V
GS
= ± 20V, V
DS
= 0V
I
D(OFF)
Drain-to-source leakage current
- - 100 nA V
GS
= -10V, V
DS
= 450V
- - 100 µA
V
DS
= 0.8V Max Rating,
V
GS
= -10V, T
A
= 125
O
C
I
DSS
Saturated drain-to-source current 1.0 - 3.0 mA V
GS
= 0V, V
DS
= 25V
R
DS(ON)
Static drain-to-source on-state resistance - 850 1000 Ω V
GS
= 0V, I
D
= 0.5mA
ΔR
DS(ON)
Change in R
DS(ON)
with temperature - - 1.2 %/
O
C V
GS
= 0V, I
D
= 0.5mA
G
FS
Forward transductance 1.0 2.0 - mmho V
DS
= 0V, I
D
= 1.0mA
C
ISS
Input capacitance - 7.5 10
pF
V
GS
= -10V,
V
DS
= 25V,
f = 1.0MHz
C
OSS
Common source output capacitance - 2.0 3.5
C
RSS
Reverse transfer capacitance - 0.5 1.0
t
d(ON)
Turn-on delay time - 0.09 -
µs
V
DD
= 25V,
I
D
= 1.0mA,
R
GEN
= 25Ω
t
r
Rise time - 0.45 -
t
d(OFF)
Turn-off delay time - 0.1 -
t
f
Fall time - 1.3 -
V
SD
Diode forward voltage drop - - 0.9 V V
GS
= -10V, I
SD
= 1.0mA
t
rr
Reverse recovery time - 200 - ns V
GS
= -10V, I
SD
= 1.0mA
Notes:
1. All D.C. parameters 100% tested at 25
O
C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Notes:
† I
D
(continuous) is limited by max rated T
j
.
Thermal Characteristics
Package
I
D
(continuous)
†
(mA)
I
D
(pulsed)
(mA)
Power Dissipation
@T
A
= 25
O
C
(W)
θ
ja
(
O
C/W)
I
DR
(mA)
I
DRM
†
(mA)
TO-236AB (SOT-23) 13 30 0.36 203 13 30
Switching Waveforms and Test Circuit
90%
10%
90%
90%
10%
10%
Pulse
Generator
VDD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
r
INPUT
INPUT
OUTPUT
0V
VDD
R
GEN
0V
-10V
t
f
Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives
an adequate “product liability indemnification insurance agreement.”
Supertex inc. does not assume responsibility for use of devices described, and limits its liability
to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and
specifications are subject to change without notice. For the latest product specifications refer to the
Supertex inc. (website: http//www.supertex.com)
©2014
Supertex inc. All rights reserved. Unauthorized use or reproduction is prohibited.
Supertex inc.
1235 Bordeaux Drive, Sunnyvale, CA
94089
T
el: 408-222-8888
www.supertex.com
3
LND250
(The package drawing(s) in this data sheet may not reect the most current specications. For the latest package outline
information go to http://www.supertex.com/packaging.html.)
Doc.# DSFP-LND250
B012314
3-Lead TO-236AB (SOT-23) Package Outline (K1)
2.90x1.30mm body, 1.12mm height (max), 1.90mm pitch
Symbol A A1 A2 b D E E1 e e1 L L1 θ
Dimension
(mm)
MIN 0.89 0.01 0.88 0.30 2.80 2.10 1.20
0.95
BSC
1.90
BSC
0.20
†
0.54
REF
0
O
NOM - - 0.95 - 2.90 - 1.30 0.50 -
MAX 1.12 0.10 1.02 0.50 3.04 2.64 1.40 0.60 8
O
JEDEC Registration TO-236, Variation AB, Issue H, Jan. 1999.
† This dimension differs from the JEDEC drawing.
Drawings not to scale.
Supertex Doc.#: DSPD-3TO236ABK1, Version C041309.
View B
View A - A
Side View
Top View
View B
Gauge
Plane
Seating
Plane
0.25
L1
L
E1
E
D
3
1
2
e
e1
b
A
A
Seating
Plane
A
A2
A1
P1-P3

LND250K1-G

Mfr. #:
Buy LND250K1-G
Manufacturer:
Microchip Technology
Description:
MOSFET 500V 1KOhm
Lifecycle:
New from this manufacturer.
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